Assignee
NOVA CRYSTALS INC
US·6 granted patents·5 pending applications·394 citations·filing 1998–2001
Top patents by PatentIndex Score
11 records- 0193US6329063B2Method for producing high quality heteroepitaxial growth using stress engineering and innovative substratesNOVA CRYSTALS INC·Filed 1998·Granted Dec 11, 2001·141 cites·5 claims
- 0292US6459716B1Integrated surface-emitting laser and modulator deviceNOVA CRYSTALS INC·Filed 2001·Granted Oct 1, 2002·75 cites·20 claims
- 0392US6384462B1Planar hetero-interface photodetectorNOVA CRYSTALS INC·Filed 2000·Granted May 7, 2002·79 cites·13 claims
- 0489US6806114B1Broadly tunable distributed bragg reflector structure processingNOVA CRYSTALS INC·Filed 2001·Granted Oct 19, 2004·33 cites·36 claims
- 0583US6459709B1Wavelength-tunable semiconductor laser diodeNOVA CRYSTALS INC·Filed 2001·Granted Oct 1, 2002·30 cites·14 claims
- 0678US6199748B1Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materialsNOVA CRYSTALS INC·Filed 1999·Granted Mar 13, 2001·36 cites·16 claims
- 0739US2002061648A1Method for producing high quality heteroepitaxial growth using stress engineering and innovative substratesNOVA CRYSTALS INC·Filed 2001·Application pending·0 cites
- 0838US2001052535A1Semiconductor eutectic alloy metal (SEAM) technology for fabrication of compliant composite substrates and integration of materialsNOVA CRYSTALS INC·Filed 2001·Application pending·0 cites
- 0935US2002068373A1Method for fabricating light emitting diodesNOVA CRYSTALS INC·Filed 2000·Application pending·0 cites
- 1034US2002070125A1Method for lift-off of epitaxially grown semiconductors by electrochemical anodic etchingNOVA CRYSTALS INC·Filed 2000·Application pending·0 cites
- 1132US2002048900A1Method for joining wafers at a low temperature and low stressNOVA CRYSTALS INC·Filed 2001·Application pending·0 cites
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