Assignee
UNIV MEIJO
JP·17 granted patents·9 pending applications·46 citations·filing 2005–2023
Top patents by PatentIndex Score
26 records- 0195US9437775B2Nitride semiconductor light-emitting deviceUNIV MEIJO·Filed 2014·Granted Sep 6, 2016·20 cites·8 claims
- 0290US10116120B2Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the elementUNIV MEIJO·Filed 2017·Granted Oct 30, 2018·5 cites·14 claims
- 0383US9716209B2Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting deviceUNIV MEIJO·Filed 2016·Granted Jul 25, 2017·5 cites·5 claims
- 0479US7855385B2SiC crystal and semiconductor deviceUNIV MEIJO·Filed 2008·Granted Dec 21, 2010·4 cites·9 claims
- 0575US7985964B2Light-emitting semiconductor deviceUNIV MEIJO·Filed 2008·Granted Jul 26, 2011·5 cites·1 claims
- 0675US7612381B2Method for fabricating a semiconductor device and semiconductor deviceUNIV MEIJO·Filed 2007·Granted Nov 3, 2009·6 cites·1 claims
- 0762US10593831B2Nitride semiconductor multilayer film reflector and light-emitting device using the sameUNIV MEIJO·Filed 2014·Granted Mar 17, 2020·1 cites·10 claims
- 0862US2024380173A1Vertical cavity light-emitting elementUNIV MEIJO·Filed 2022·Application pending·0 cites
- 0961US2015355204A1Marker for depression, assay method, method for determining depression, screening method for antidepressants, and kitUNIV MEIJO·Filed 2014·Application pending·0 cites
- 1058US2020144451A1Nitride semiconductor crystal and method of fabricating the sameUNIV MEIJO·Filed 2020·Application pending·0 cites
- 1157US9581606B2Method for determining depression, kit for analyzing serotonin transporter, and kit for analyzing ubiquitinated serotonin transporter in bloodUNIV MEIJO·Filed 2016·Granted Feb 28, 2017·0 cites·3 claims
- 1255US11146040B2Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting elementUNIV MEIJO·Filed 2018·Granted Oct 12, 2021·0 cites·9 claims
- 1355US2025253622A1Nitride semiconductor light emitting element and method for producing nitride semiconductor light emitting elementUNIV MEIJO·Filed 2023·Application pending·0 cites
- 1454US2025183623A1Method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting elementUNIV MEIJO·Filed 2023·Application pending·0 cites
- 1554US2017248586A1Marker For Depression, Assay Method, Method For Determining Depression, Screening Method For Antidepressants, And KitUNIV MEIJO·Filed 2017·Application pending·0 cites
- 1653US2017155016A9Nitride semiconductor crystal and method of fabricating the sameUNIV MEIJO·Filed 2014·Application pending·0 cites
- 1749US9254477B2Method for producing catalytic metal layer and method for producing graphene materialUNIV MEIJO·Filed 2014·Granted Feb 9, 2016·0 cites·18 claims
- 1848US2009166674A1Ultraviolet light receiving elementUNIV MEIJO·Filed 2006·Application pending·0 cites
- 1945US7756189B2Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting elementUNIV MEIJO·Filed 2007·Granted Jul 13, 2010·0 cites·7 claims
- 2045US2009285745A1Method for Production of Carbon Nanotube and Method for Purification of the SameUNIV MEIJO·Filed 2005·Application pending·0 cites
- 2144US12029578B2Skin diagnosing device, skin condition outputting method, program, and recording mediumUNIV MEIJO·Filed 2018·Granted Jul 9, 2024·0 cites·10 claims
- 2241US10411438B2Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the elementUNIV MEIJO·Filed 2017·Granted Sep 10, 2019·0 cites·12 claims
- 2341US10398442B2StentUNIV MEIJO·Filed 2015·Granted Sep 3, 2019·0 cites·15 claims
- 2441US9777363B2Surface layer hardened metal material and surface layer hardening methodUNIV MEIJO·Filed 2013·Granted Oct 3, 2017·0 cites·2 claims
- 2541US9666753B2Nitride semiconductor light emitting device and method of fabricating the sameUNIV MEIJO·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 2637US9847449B2Nitride semiconductor light-emitting device with periodic gain active layersUNIV MEIJO·Filed 2015·Granted Dec 19, 2017·0 cites·6 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →