Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element

Abstract

Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

The invention claimed is: 
     
       1. A semiconductor multilayer film reflecting mirror comprising:
 a substrate; and 
 a semiconductor multilayer film which is formed on said substrate and which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner, 
 wherein each of said first layers comprises a non-doped InAlN layer, and 
 wherein each of said second layers comprises a GaN layer containing a dopant. 
 
     
     
       2. The semiconductor multilayer film reflecting mirror according to  claim 1 , wherein said dopant is Si. 
     
     
       3. The semiconductor multilayer film reflecting mirror according to  claim 2 , wherein an Si concentration is at least 3×10 18  atoms/cm 3  in said GaN layer containing said dopant in each of said second layers. 
     
     
       4. The semiconductor multilayer film reflecting mirror according to  claim 1 , wherein said dopant is Mg. 
     
     
       5. The semiconductor multilayer film reflecting mirror according to  claim 1 , wherein each of said second layers consists of a first GaN layer and a second GaN layer, and only one of said first GaN layer or said second GaN layer contains said dopant. 
     
     
       6. The semiconductor multilayer film reflecting mirror according to  claim 5 , wherein each of said first layers consist of a single non-doped InAlN layer. 
     
     
       7. The semiconductor multilayer film reflecting mirror according to  claim 6 , wherein, in each of said second layers, said first GaN layer contains said dopant and said second GaN layer does not contain said dopant, and
 wherein said plurality of first layers and said plurality of second layers are stacked on each other in said semiconductor multilayer film such that said first GaN layer of said second layers is stacked on a surface of said InAlN layer of said first layers. 
 
     
     
       8. The semiconductor multilayer film reflecting mirror according to  claim 7 , wherein, in each of said second layers, said first GaN layer is thinner than said second GaN layer. 
     
     
       9. A vertical cavity light-emitting element comprising:
 a semiconductor structure layer including a first semiconductor layer having a first conductivity type, an active layer, and a second semiconductor layer having a second conductivity type opposite to said first conductivity type; and 
 first and second reflecting mirrors opposite to each other with said semiconductor structure layer interposed therebetween, 
 wherein: 
 said first reflecting mirror comprises a semiconductor multilayer film which includes a plurality of first layers and a plurality of second layers which are stacked on each other in an alternating manner, 
 wherein each of said first layers comprises a non-doped InAlN layer; and 
 wherein each of said second layers comprises a GaN layer containing a dopant.