Inventor

YUN WEI-SHENG

TW49 patents

⚠️ This page may combine multiple inventors who share the name “YUN WEI-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YUN WEI-SHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Structure and formation method of semiconductor device structure with nanowires

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device and a semiconductor device

Method of manufacturing a semiconductor device and a semiconductor device

Memory array, integrated circuit including the same, and manufacturing method thereof

Structure and formation method of semiconductor device structure with nanowires

Semiconductor structure

Method of manufacturing a semiconductor device and a semiconductor device

Method for forming gate-all-around structure

Dual channel gate all around transistor device and fabrication methods thereof

Semiconductor device structure and method for forming the same

Semiconductor device and method of manufacturing the same

Structure and formation method of semiconductor device structure with nanowires

Vertical transistor device and method for fabricating the same

Gate-all-around structure and manufacturing method for the same

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and method for manufacturing the same

Vertical transistor device and method for fabricating the same

Vertical transistor device and method for fabricating the same

Method of manufacturing a semiconductor device and a semiconductor device

Gate stacks for stack-fin channel I/O devices and nanowire channel core devices

Semiconductor device

Semiconductor device structure and method for forming the same

Semiconductor device structure and method for forming the same

Semiconductor device

Semiconductor device structure and method for forming the same

Gate stacks for stack-fin channel I/O devices and nanowire channel core devices

Gate stacks for stack-fin channel I/O devices and nanowire channel core devices

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor structure

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Dual channel gate all around transistor device and fabrication methods thereof

Semiconductor structure and method of manufacture

Dual channel gate all around transistor device and fabrication methods thereof

Semiconductor device with fin end spacer and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device with fin end spacer and method of manufacturing the same

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Semiconductor device including a gate-all-around field effect transistor

Transistors comprising a vertical stack of elongated semiconductor features

Semiconductor device and manufacturing method thereof

Method of manufacturing a semiconductor device and a semiconductor device

Semiconductor device and method for manufacturing the same

WENG CHIH-HUI

Methods of manufacturing semiconductor devices including use of a protective material