Inventor · disambiguated record
Giulio Casagrande
Also filed as: CASAGRANDE GIULIO
26 granted patents·1 pending application·883 citations·filing 1986–2012
97Inventor score
Files withST MICROELECTRONICS SRL10OVONYX INC5LOWREY TYLER3SGS THOMSON MICROELECTRONICS3PELLIZZER FABIO2
Top patents by PatentIndex Score
27 records- 0197US6972430B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofOVONYX INC·Filed 2003·Granted Dec 6, 2005·158 cites·16 claims
- 0296US7110289B1Method and system for controlling MRAM write current to reduce power consumptionST MICROELECTRONICS SRL·Filed 2004·Granted Sep 19, 2006·154 cites·8 claims
- 0396US7012832B1Magnetic memory cell with plural read transistorsST MICROELECTRONICS SRL·Filed 2003·Granted Mar 14, 2006·160 cites·30 claims
- 0495US7577024B2Streaming mode programming in phase change memoriesINTEL CORP·Filed 2007·Granted Aug 18, 2009·42 cites·26 claims
- 0593US7495944B2Reading phase change memoriesOVONYX INC·Filed 2005·Granted Feb 24, 2009·23 cites·16 claims
- 0689US6567296B1Memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted May 20, 2003·54 cites·20 claims
- 0788US7075841B2Writing circuit for a phase change memory deviceST MICROELECTRONICS SRL·Filed 2004·Granted Jul 11, 2006·46 cites·31 claims
- 0886US4807188ANonvolatile memory device with a high number of cycle programming enduranceSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Feb 21, 1989·51 cites·3 claims
- 0983US8259525B2Using a bit specific reference level to read a memoryLOWREY TYLER·Filed 2012·Granted Sep 4, 2012·6 cites·14 claims
- 1080US5612913AByte erasable EEPROM fully compatible with a single power supply flash-EPROM processSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Mar 18, 1997·47 cites·27 claims
- 1179US6627931B1Ferroelectric memory cell and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2000·Granted Sep 30, 2003·17 cites·12 claims
- 1278US6989580B2Process for manufacturing an array of cells including selection bipolar junction transistorsOVONYX INC·Filed 2003·Granted Jan 24, 2006·21 cites·28 claims
- 1375US8098512B2Reading phase change memoriesPARKINSON WARD D·Filed 2011·Granted Jan 17, 2012·3 cites·9 claims
- 1475US7446011B2Array of cells including a selection bipolar transistor and fabrication method thereofPELLIZZER FABIO·Filed 2006·Granted Nov 4, 2008·5 cites·26 claims
- 1572US8705306B2Method for using a bit specific reference level to read a phase change memoryLOWREY TYLER·Filed 2012·Granted Apr 22, 2014·3 cites·10 claims
- 1670US8116159B2Using a bit specific reference level to read a resistive memoryLOWREY TYLER·Filed 2005·Granted Feb 14, 2012·5 cites·11 claims
- 1769US5905677AVoltage regulator for non-volatile semiconductor electrically programmable memory devicesSGS THOMSON MICROELECTRONICS·Filed 1997·Granted May 18, 1999·24 cites·34 claims
- 1867US5576990AVoltage regulator for non-volatile semiconductor memory devicesST MICROELECTRONICS SRL·Filed 1995·Granted Nov 19, 1996·26 cites·39 claims
- 1966US4802166ADevice for the verification of memory cells on the basis of the threshold drop obtainable during writingSGS MICROELETTRONICA SPA·Filed 1986·Granted Jan 31, 1989·21 cites·5 claims
- 2062US7563684B2Process for manufacturing an array of cells including selection bipolar junction transistorsPELLIZZER FABIO·Filed 2005·Granted Jul 21, 2009·2 cites·23 claims
- 2157US7135756B2Array of cells including a selection bipolar transistor and fabrication method thereofOVONYX INC·Filed 2003·Granted Nov 14, 2006·6 cites·31 claims
- 2244US7936584B2Reading phase change memoriesOVONYX INC·Filed 2009·Granted May 3, 2011·0 cites·19 claims
- 2341US5659516AVoltage regulator for non-volatile semiconductor electrically programmable memory devicesST MICROELECTRONICS SRL·Filed 1995·Granted Aug 19, 1997·6 cites·12 claims
- 2440US7372166B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2005·Granted May 13, 2008·0 cites·36 claims
- 2540US6532171B2Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory unitsST MICROELECTRONICS SRL·Filed 2001·Granted Mar 11, 2003·2 cites·14 claims
- 2637US2004029298A1Ferroelectric memory cell and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2003·Application pending·0 cites
- 2731US4847811APre-charging circuit for word lines of a memory system, in particular with programmable cellsSGS MICROELETTRONICA SPA·Filed 1988·Granted Jul 11, 1989·1 cites·6 claims
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