P

Inventor

EUN DONG-SEOG

KR24 patents
⚠️ This page may combine multiple inventors who share the name “EUN DONG-SEOG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US9716104B2Jul 25, 2017

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD39 citations97
US9773806B1Sep 26, 2017

Semiconductor device

SAMSUNG ELECTRONICS CO LTD21 citations93
US6737335B2May 18, 2004

Shallow trench isolation type semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US10546874B2Jan 28, 2020

Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks

SAMSUNG ELECTRONICS CO LTD5 citations83
US10204919B2Feb 12, 2019

Vertical memory device

SAMSUNG ELECTRONICS CO LTD11 citations83
US10153292B2Dec 11, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD12 citations83
US10103165B2Oct 16, 2018

Memory device

SAMSUNG ELECTRONICS CO LTD9 citations83
US7700426B2Apr 20, 2010

Nonvolatile memory device and method of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6586804B2Jul 1, 2003

Shallow trench isolation type semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations74
US10886289B2Jan 5, 2021

Integrated circuit device including vertical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10964720B2Mar 30, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10854631B2Dec 1, 2020

Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks

SAMSUNG ELECTRONICS CO LTD1 citations72
US9972636B2May 15, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD4 citations72
US7348267B2Mar 25, 2008

Flash memory and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
USRE50547EAug 19, 2025

Integrated circuit device including vertical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50225ENov 26, 2024

Integrated circuit device including vertical memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11716849B2Aug 1, 2023

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations60
US7541243B2Jun 2, 2009

Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers

SAMSUNG ELECTRONICS CO LTD0 citations52
US10211220B2Feb 19, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US7736989B2Jun 15, 2010

Method of forming semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations42

KANG SHIN HWAN

1 patent

KANAMORI KOHJI

1 patent

LEE SEOK-WON

1 patent

WON JIN-YEON

1 patent