Inventor
EUN DONG-SEOG
KR24 patents
⚠️ This page may combine multiple inventors who share the name “EUN DONG-SEOG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS9716104B2Jul 25, 2017
Vertical memory devices having dummy channel regions
SAMSUNG ELECTRONICS CO LTD39 citations97
US9773806B1Sep 26, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD21 citations93
US6737335B2May 18, 2004
Shallow trench isolation type semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US10546874B2Jan 28, 2020
Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks
SAMSUNG ELECTRONICS CO LTD5 citations83
US10204919B2Feb 12, 2019
Vertical memory device
SAMSUNG ELECTRONICS CO LTD11 citations83
US10153292B2Dec 11, 2018
Vertical memory devices having dummy channel regions
SAMSUNG ELECTRONICS CO LTD12 citations83
US10103165B2Oct 16, 2018
Memory device
SAMSUNG ELECTRONICS CO LTD9 citations83
US7700426B2Apr 20, 2010
Nonvolatile memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6586804B2Jul 1, 2003
Shallow trench isolation type semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US10886289B2Jan 5, 2021
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10964720B2Mar 30, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10854631B2Dec 1, 2020
Semiconductor memory device having a channel structure vertically passing through a plurality of memory layers and having memory cell blocks and dummy memory cell blocks
SAMSUNG ELECTRONICS CO LTD1 citations72
US9972636B2May 15, 2018
Vertical memory devices having dummy channel regions
SAMSUNG ELECTRONICS CO LTD4 citations72
US7348267B2Mar 25, 2008
Flash memory and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
USRE50547EAug 19, 2025
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50225ENov 26, 2024
Integrated circuit device including vertical memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11716849B2Aug 1, 2023
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations60
US7541243B2Jun 2, 2009
Methods of forming integrated circuit devices having gate electrodes formed on non-uniformly thick gate insulating layers
SAMSUNG ELECTRONICS CO LTD0 citations52
US10211220B2Feb 19, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US7736989B2Jun 15, 2010
Method of forming semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations42