Inventor

TAKAISHI YOSHIHIRO

JP50 patents

⚠️ This page may combine multiple inventors who share the name “TAKAISHI YOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAKAISHI YOSHIHIRO

NEC CORP

Process of fabricating dynamic random access memory device having storage capacitor low in contact resistance and small in leakage current through tantalum oxide film

Stacked capacitor type semiconductor memory device with good flatness characteristics

Manufacturing method of semiconductor memory device having a trench gate electrode

Semiconductor memory device having trench isolation regions and bit lines formed thereover

Semiconductor memory device having stacked capacitor

Method for manufacturing a stacked capacitor type semiconductor memory device with good flatness characteristics

Method of manufacturing an insulation layer having a flat surface

Dynamic random access memory cell having an improved fin-structured storage electrode and method of fabricating the same

Method of fabricating a semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner

Method of manufacturing semiconductor device including memory cell having transistor

Semiconductor memory device having bit line directly held in contact through contact with impurity region in self-aligned manner and process of fabrication thereof

Storage capacitor having a refractory metal storage electrode and method of forming the same

Method for manufacturing semiconductor device using spin on glass layer

Dynamic random access memory cell having an improved fin-structured storage electrode

Method for manufacturing semiconductor memory device capable of improving isolation characteristics

Method for making a semiconductor device

Semiconductor memory device

Method of manufacturing semi-conductor memory device using two etching patterns

Method for manufacturing semiconductor device using spin on glass layer

ELPIDA MEMORY INC

Semiconductor device including a well potential supply device and a vertical MOS transistor

Device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor memory device and method of manufacturing the same

Semiconductor device having a cylindrical capacitor

Method of manufacturing a semiconductor device

Semiconductor device having semiconductor pillar

Semiconductor memory device and data processing system

Method for manufacturing a semiconductor device having a polymetal gate electrode structure

Semiconductor memory device

Manufacturing method of semiconductor device having vertical type transistor

Semiconductor device having semiconductor pillar

Semiconductor device

Method of forming semiconductor device

Method for manufacturing a semiconductor device including a memory cell array area and peripheral circuit area

Semiconductor device and method of forming the same

Semiconductor memory with sense amplifier

Semiconductor device manufacturing method for forming diffused layers by impurity implantation using gate wiring layer mask

TAKAISHI YOSHIHIRO

High and low voltage vertical channel transistors

Semiconductor device and method of forming the same

High voltage vertical channel transistors

Semiconductor device having vertical surrounding gate transistor structure, method for manufacturing the same, and data processing system

Semiconductor device with buried bit line

PS4 LUXCO SARL

Semiconductor device

Semiconductor device

Semiconductor device and production method therefor

Semiconductor device

NEC ELECTRONICS CORP

Semiconductor device structure and method for manufacturing the same

MICRON TECHNOLOGY INC

Semiconductor device

OYU KIYONORI

Semiconductor device having vertical MOS transistor and method for manufacturing the semiconductor device

IKEBUCHI YOSHINORI

Semiconductor device with vertical transistor