P

Inventor

KING TSU-JAE

US72 patents
⚠️ This page may combine multiple inventors who share the name “KING TSU-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PROGRESSANT TECHNOLOGIES INC

24 patents
US6479862B1Nov 12, 2002

Charge trapping device and method for implementing a transistor having a negative differential resistance mode

PROGRESSANT TECHNOLOGIES INC148 citations99
US6596617B1Jul 22, 2003

CMOS compatible process for making a tunable negative differential resistance (NDR) device

PROGRESSANT TECHNOLOGIES INC35 citations96
US6512274B1Jan 28, 2003

CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same

PROGRESSANT TECHNOLOGIES INC43 citations96
US6754104B2Jun 22, 2004

Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET

PROGRESSANT TECHNOLOGIES INC23 citations93
US6664601B1Dec 16, 2003

Method of orperating a dual mode FET & logic circuit having negative differential resistance mode

PROGRESSANT TECHNOLOGIES INC15 citations93
US6518589B2Feb 11, 2003

Dual mode FET & logic circuit having negative differential resistance mode

PROGRESSANT TECHNOLOGIES INC28 citations93
US6864104B2Mar 8, 2005

Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects

PROGRESSANT TECHNOLOGIES INC14 citations84
US6806117B2Oct 19, 2004

Methods of testing/stressing a charge trapping device

PROGRESSANT TECHNOLOGIES INC14 citations84
US7067873B2Jun 27, 2006

Charge trapping device

PROGRESSANT TECHNOLOGIES INC6 citations74
US7012842B2Mar 14, 2006

Enhanced read and write methods for negative differential resistance (NDR) based memory device

PROGRESSANT TECHNOLOGIES INC8 citations74
US7005711B2Feb 28, 2006

N-channel pull-up element and logic circuit

PROGRESSANT TECHNOLOGIES INC8 citations74
US6990016B2Jan 24, 2006

Method of making memory cell utilizing negative differential resistance devices

PROGRESSANT TECHNOLOGIES INC8 citations74
US6980467B2Dec 27, 2005

Method of forming a negative differential resistance device

PROGRESSANT TECHNOLOGIES INC4 citations74
US6861707B1Mar 1, 2005

Negative differential resistance (NDR) memory cell with reduced soft error rate

PROGRESSANT TECHNOLOGIES INC8 citations74
US6849483B2Feb 1, 2005

Charge trapping device and method of forming the same

PROGRESSANT TECHNOLOGIES INC7 citations74
US6847562B2Jan 25, 2005

Enhanced read and write methods for negative differential resistance (NDR) based memory device

PROGRESSANT TECHNOLOGIES INC6 citations74
US6812084B2Nov 2, 2004

Adaptive negative differential resistance device

PROGRESSANT TECHNOLOGIES INC10 citations74
US6795337B2Sep 21, 2004

Negative differential resistance (NDR) elements and memory device using the same

PROGRESSANT TECHNOLOGIES INC8 citations74
US6724655B2Apr 20, 2004

Memory cell using negative differential resistance field effect transistors

PROGRESSANT TECHNOLOGIES INC12 citations74
US6693027B1Feb 17, 2004

Method for configuring a device to include a negative differential resistance (NDR) characteristic

PROGRESSANT TECHNOLOGIES INC6 citations74
US6686631B1Feb 3, 2004

Negative differential resistance (NDR) device and method of operating same

PROGRESSANT TECHNOLOGIES INC9 citations74
US6686267B1Feb 3, 2004

Method for fabricating a dual mode FET and logic circuit having negative differential resistance mode

PROGRESSANT TECHNOLOGIES INC6 citations74
US6680245B1Jan 20, 2004

Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process

PROGRESSANT TECHNOLOGIES INC6 citations74
US6567292B1May 20, 2003

Negative differential resistance (NDR) element and memory with reduced soft error rate

PROGRESSANT TECHNOLOGIES INC10 citations74

UNIV CALIFORNIA

11 patents

SYNOPSYS INC

9 patents

XEROX CORP

3 patents

TRUSTEES OF LELAND STANFORD UN

1 patent

KING TSU-JAE

1 patent

PROGRESSENT TECHNOLOGIES INC

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.