Inventor
KING TSU-JAE
US72 patents
⚠️ This page may combine multiple inventors who share the name “KING TSU-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PROGRESSANT TECHNOLOGIES INC
24 patentsUS6479862B1Nov 12, 2002
Charge trapping device and method for implementing a transistor having a negative differential resistance mode
PROGRESSANT TECHNOLOGIES INC148 citations99
US6596617B1Jul 22, 2003
CMOS compatible process for making a tunable negative differential resistance (NDR) device
PROGRESSANT TECHNOLOGIES INC35 citations96
US6512274B1Jan 28, 2003
CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
PROGRESSANT TECHNOLOGIES INC43 citations96
US6754104B2Jun 22, 2004
Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
PROGRESSANT TECHNOLOGIES INC23 citations93
US6664601B1Dec 16, 2003
Method of orperating a dual mode FET & logic circuit having negative differential resistance mode
PROGRESSANT TECHNOLOGIES INC15 citations93
US6518589B2Feb 11, 2003
Dual mode FET & logic circuit having negative differential resistance mode
PROGRESSANT TECHNOLOGIES INC28 citations93
US6864104B2Mar 8, 2005
Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
PROGRESSANT TECHNOLOGIES INC14 citations84
US6806117B2Oct 19, 2004
Methods of testing/stressing a charge trapping device
PROGRESSANT TECHNOLOGIES INC14 citations84
US7067873B2Jun 27, 2006
Charge trapping device
PROGRESSANT TECHNOLOGIES INC6 citations74
US7012842B2Mar 14, 2006
Enhanced read and write methods for negative differential resistance (NDR) based memory device
PROGRESSANT TECHNOLOGIES INC8 citations74
US7005711B2Feb 28, 2006
N-channel pull-up element and logic circuit
PROGRESSANT TECHNOLOGIES INC8 citations74
US6990016B2Jan 24, 2006
Method of making memory cell utilizing negative differential resistance devices
PROGRESSANT TECHNOLOGIES INC8 citations74
US6980467B2Dec 27, 2005
Method of forming a negative differential resistance device
PROGRESSANT TECHNOLOGIES INC4 citations74
US6861707B1Mar 1, 2005
Negative differential resistance (NDR) memory cell with reduced soft error rate
PROGRESSANT TECHNOLOGIES INC8 citations74
US6849483B2Feb 1, 2005
Charge trapping device and method of forming the same
PROGRESSANT TECHNOLOGIES INC7 citations74
US6847562B2Jan 25, 2005
Enhanced read and write methods for negative differential resistance (NDR) based memory device
PROGRESSANT TECHNOLOGIES INC6 citations74
US6812084B2Nov 2, 2004
Adaptive negative differential resistance device
PROGRESSANT TECHNOLOGIES INC10 citations74
US6795337B2Sep 21, 2004
Negative differential resistance (NDR) elements and memory device using the same
PROGRESSANT TECHNOLOGIES INC8 citations74
US6724655B2Apr 20, 2004
Memory cell using negative differential resistance field effect transistors
PROGRESSANT TECHNOLOGIES INC12 citations74
US6693027B1Feb 17, 2004
Method for configuring a device to include a negative differential resistance (NDR) characteristic
PROGRESSANT TECHNOLOGIES INC6 citations74
US6686631B1Feb 3, 2004
Negative differential resistance (NDR) device and method of operating same
PROGRESSANT TECHNOLOGIES INC9 citations74
US6686267B1Feb 3, 2004
Method for fabricating a dual mode FET and logic circuit having negative differential resistance mode
PROGRESSANT TECHNOLOGIES INC6 citations74
US6680245B1Jan 20, 2004
Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process
PROGRESSANT TECHNOLOGIES INC6 citations74
US6567292B1May 20, 2003
Negative differential resistance (NDR) element and memory with reduced soft error rate
PROGRESSANT TECHNOLOGIES INC10 citations74
UNIV CALIFORNIA
11 patentsUS6794234B2Sep 21, 2004
Dual work function CMOS gate technology based on metal interdiffusion
UNIV CALIFORNIA124 citations99
US6413802B1Jul 2, 2002
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
UNIV CALIFORNIA1,182 citations98
US6210988B1Apr 3, 2001
Polycrystalline silicon germanium films for forming micro-electromechanical systems
UNIV CALIFORNIA347 citations98
US6448622B1Sep 10, 2002
Polycrystalline silicon-germanium films for micro-electromechanical systems application
UNIV CALIFORNIA167 citations97
US7256107B2Aug 14, 2007
Damascene process for use in fabricating semiconductor structures having micro/nano gaps
UNIV CALIFORNIA41 citations93
US7141858B2Nov 28, 2006
Dual work function CMOS gate technology based on metal interdiffusion
UNIV CALIFORNIA22 citations93
US7629640B2Dec 8, 2009
Two bit/four bit SONOS flash memory cell
UNIV CALIFORNIA20 citations92
US7084407B2Aug 1, 2006
Ion beam extractor with counterbore
UNIV CALIFORNIA29 citations92
US6855994B1Feb 15, 2005
Multiple-thickness gate oxide formed by oxygen implantation
UNIV CALIFORNIA29 citations92
US7839710B2Nov 23, 2010
Nano-electro-mechanical memory cells and devices
UNIV CALIFORNIA10 citations82
US7649230B2Jan 19, 2010
Complementary field-effect transistors having enhanced performance with a single capping layer
UNIV CALIFORNIA8 citations82
SYNOPSYS INC
9 patentsUS7960232B2Jun 14, 2011
Methods of designing an integrated circuit on corrugated substrate
SYNOPSYS INC139 citations99
US7528465B2May 5, 2009
Integrated circuit on corrugated substrate
SYNOPSYS INC347 citations99
US7265008B2Sep 4, 2007
Method of IC production using corrugated substrate
SYNOPSYS INC349 citations99
US7247887B2Jul 24, 2007
Segmented channel MOS transistor
SYNOPSYS INC476 citations99
US7190050B2Mar 13, 2007
Integrated circuit on corrugated substrate
SYNOPSYS INC423 citations99
US7254050B2Aug 7, 2007
Method of making adaptive negative differential resistance device
SYNOPSYS INC10 citations84
US6912151B2Jun 28, 2005
Negative differential resistance (NDR) based memory device with reduced body effects
SYNOPSYS INC13 citations84
US7453083B2Nov 18, 2008
Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
SYNOPSYS INC8 citations74
US6933548B1Aug 23, 2005
Negative differential resistance load element
SYNOPSYS INC6 citations74
XEROX CORP
3 patentsUS5401982AMar 28, 1995
Reducing leakage current in a thin-film transistor with charge carrier densities that vary in two dimensions
XEROX CORP65 citations96
US5893949AApr 13, 1999
Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
XEROX CORP25 citations92
US5707744AJan 13, 1998
Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates
XEROX CORP23 citations92
TRUSTEES OF LELAND STANFORD UN
1 patentKING TSU-JAE
1 patentPROGRESSENT TECHNOLOGIES INC
1 patentShowing the top 50 of 72 patents by PatentIndex Score.