P

Inventor

KIM GYU-HONG

KR36 patents
⚠️ This page may combine multiple inventors who share the name “KIM GYU-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US5999463ADec 7, 1999

Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks

SAMSUNG ELECTRONICS CO LTD58 citations96
US6927999B2Aug 9, 2005

Integrated circuit memory devices and methods of programming the same in which the current drawn during a programming operation is independent of the data to be programmed

SAMSUNG ELECTRONICS CO LTD19 citations92
US6694422B1Feb 17, 2004

Semiconductor memory device having adjustable page length and page depth

SAMSUNG ELECTRONICS CO LTD25 citations92
US6118712ASep 12, 2000

Redundancy fuse boxes and redundancy repair structures for semiconductor devices

SAMSUNG ELECTRONICS CO LTD34 citations92
US6026035AFeb 15, 2000

Integrated circuit memory devices having improved precharge and I/O driver characteristics and methods of operating same

SAMSUNG ELECTRONICS CO LTD25 citations92
US5555526ASep 10, 1996

Synchronous semiconductor memory device having an auto-precharge function

SAMSUNG ELECTRONICS CO LTD27 citations92
US5768213AJun 16, 1998

Clock generating circuit for use in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD49 citations89
US6930943B2Aug 16, 2005

Methods, circuits, and systems for refreshing memory cells in a memory device that have different refresh periods

SAMSUNG ELECTRONICS CO LTD12 citations84
USRE36532EJan 25, 2000

Synchronous semiconductor memory device having an auto-precharge function

SAMSUNG ELECTRONICS CO LTD16 citations84
US5835444ANov 10, 1998

Method for controlling data output buffer for use in operation at high frequency of synchronous memory

SAMSUNG ELECTRONICS CO LTD19 citations84
US7560974B2Jul 14, 2009

Generation of back-bias voltage with high temperature sensitivity

SAMSUNG ELECTRONICS CO LTD10 citations82
US7315221B2Jan 1, 2008

Method and circuit for controlling a refresh of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD15 citations82
US7227802B2Jun 5, 2007

Multi-time programmable semiconductor memory device and multi-time programming method therefor

SAMSUNG ELECTRONICS CO LTD7 citations74
US6388925B1May 14, 2002

Row redundancy scheme capable of replacing defective wordlines in one block with redundant wordlines in another block

SAMSUNG ELECTRONICS CO LTD13 citations74
US5926420AJul 20, 1999

Merged Memory and Logic (MML) integrated circuits including data path width reducing circuits and methods

SAMSUNG ELECTRONICS CO LTD12 citations74
US9087566B2Jul 21, 2015

Semiconductor memory devices including a discharge circuit

SAMSUNG ELECTRONICS CO LTD5 citations73
US6708261B1Mar 16, 2004

Multi-stage data buffers having efficient data transfer characteristics and methods of operating same

SAMSUNG ELECTRONICS CO LTD7 citations73
US5777943AJul 7, 1998

Column decoder for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD14 citations67
US7561486B2Jul 14, 2009

Flash memory devices with flash fuse cell arrays

SAMSUNG ELECTRONICS CO LTD5 citations63
US6812774B2Nov 2, 2004

Method and apparatus for generating a high voltage

SAMSUNG ELECTRONICS CO LTD6 citations63
US6563756B2May 13, 2003

Memory device with reduced refresh noise

SAMSUNG ELECTRONICS CO LTD2 citations63
US7376029B2May 20, 2008

Semiconductor memory devices including precharge circuit and methods for precharging

SAMSUNG ELECTRONICS CO LTD2 citations62
US7269076B2Sep 11, 2007

Low power consumption data input/output circuit of embedded memory device and data input/output method of the circuit

SAMSUNG ELECTRONICS CO LTD3 citations62
US7088628B2Aug 8, 2006

Memory device and method of amplifying voltage levels of bit line and complementary bit line

SAMSUNG ELECTRONICS CO LTD3 citations62
US6330199B2Dec 11, 2001

Semiconductor memory device and redundancy circuit, and method of increasing redundancy efficiency

SAMSUNG ELECTRONICS CO LTD4 citations62
US10311946B2Jun 4, 2019

Semiconductor memory device with assymetric precharge

SAMSUNG ELECTRONICS CO LTD1 citations60
US7274614B2Sep 25, 2007

Flash cell fuse circuit and method of fusing a flash cell

SAMSUNG ELECTRONICS CO LTD4 citations60
US7852694B2Dec 14, 2010

Semiconductor memory device for reducing precharge time

SAMSUNG ELECTRONICS CO LTD0 citations52
US6903955B2Jun 7, 2005

Semiconductor memory device having consistent skew over entire memory core

SAMSUNG ELECTRONICS CO LTD0 citations52
US7079435B2Jul 18, 2006

Sense amplifier circuit to write data at high speed in high speed semiconductor memory

SAMSUNG ELECTRONICS CO LTD0 citations51
US5640360AJun 17, 1997

Address buffer of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations42

SONG TAE-JOONG

2 patents

HYUNDAI MOTOR CO LTD

1 patent

SONG TAE JOONG

1 patent

KIM GYU HONG

1 patent