Inventor
KIM GYU-HONG
KR36 patents
⚠️ This page may combine multiple inventors who share the name “KIM GYU-HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS5999463ADec 7, 1999
Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks
SAMSUNG ELECTRONICS CO LTD58 citations96
US6927999B2Aug 9, 2005
Integrated circuit memory devices and methods of programming the same in which the current drawn during a programming operation is independent of the data to be programmed
SAMSUNG ELECTRONICS CO LTD19 citations92
US6694422B1Feb 17, 2004
Semiconductor memory device having adjustable page length and page depth
SAMSUNG ELECTRONICS CO LTD25 citations92
US6118712ASep 12, 2000
Redundancy fuse boxes and redundancy repair structures for semiconductor devices
SAMSUNG ELECTRONICS CO LTD34 citations92
US6026035AFeb 15, 2000
Integrated circuit memory devices having improved precharge and I/O driver characteristics and methods of operating same
SAMSUNG ELECTRONICS CO LTD25 citations92
US5555526ASep 10, 1996
Synchronous semiconductor memory device having an auto-precharge function
SAMSUNG ELECTRONICS CO LTD27 citations92
US5768213AJun 16, 1998
Clock generating circuit for use in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD49 citations89
US6930943B2Aug 16, 2005
Methods, circuits, and systems for refreshing memory cells in a memory device that have different refresh periods
SAMSUNG ELECTRONICS CO LTD12 citations84
USRE36532EJan 25, 2000
Synchronous semiconductor memory device having an auto-precharge function
SAMSUNG ELECTRONICS CO LTD16 citations84
US5835444ANov 10, 1998
Method for controlling data output buffer for use in operation at high frequency of synchronous memory
SAMSUNG ELECTRONICS CO LTD19 citations84
US7560974B2Jul 14, 2009
Generation of back-bias voltage with high temperature sensitivity
SAMSUNG ELECTRONICS CO LTD10 citations82
US7315221B2Jan 1, 2008
Method and circuit for controlling a refresh of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD15 citations82
US7227802B2Jun 5, 2007
Multi-time programmable semiconductor memory device and multi-time programming method therefor
SAMSUNG ELECTRONICS CO LTD7 citations74
US6388925B1May 14, 2002
Row redundancy scheme capable of replacing defective wordlines in one block with redundant wordlines in another block
SAMSUNG ELECTRONICS CO LTD13 citations74
US5926420AJul 20, 1999
Merged Memory and Logic (MML) integrated circuits including data path width reducing circuits and methods
SAMSUNG ELECTRONICS CO LTD12 citations74
US9087566B2Jul 21, 2015
Semiconductor memory devices including a discharge circuit
SAMSUNG ELECTRONICS CO LTD5 citations73
US6708261B1Mar 16, 2004
Multi-stage data buffers having efficient data transfer characteristics and methods of operating same
SAMSUNG ELECTRONICS CO LTD7 citations73
US5777943AJul 7, 1998
Column decoder for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD14 citations67
US7561486B2Jul 14, 2009
Flash memory devices with flash fuse cell arrays
SAMSUNG ELECTRONICS CO LTD5 citations63
US6812774B2Nov 2, 2004
Method and apparatus for generating a high voltage
SAMSUNG ELECTRONICS CO LTD6 citations63
US6563756B2May 13, 2003
Memory device with reduced refresh noise
SAMSUNG ELECTRONICS CO LTD2 citations63
US7376029B2May 20, 2008
Semiconductor memory devices including precharge circuit and methods for precharging
SAMSUNG ELECTRONICS CO LTD2 citations62
US7269076B2Sep 11, 2007
Low power consumption data input/output circuit of embedded memory device and data input/output method of the circuit
SAMSUNG ELECTRONICS CO LTD3 citations62
US7088628B2Aug 8, 2006
Memory device and method of amplifying voltage levels of bit line and complementary bit line
SAMSUNG ELECTRONICS CO LTD3 citations62
US6330199B2Dec 11, 2001
Semiconductor memory device and redundancy circuit, and method of increasing redundancy efficiency
SAMSUNG ELECTRONICS CO LTD4 citations62
US10311946B2Jun 4, 2019
Semiconductor memory device with assymetric precharge
SAMSUNG ELECTRONICS CO LTD1 citations60
US7274614B2Sep 25, 2007
Flash cell fuse circuit and method of fusing a flash cell
SAMSUNG ELECTRONICS CO LTD4 citations60
US7852694B2Dec 14, 2010
Semiconductor memory device for reducing precharge time
SAMSUNG ELECTRONICS CO LTD0 citations52
US6903955B2Jun 7, 2005
Semiconductor memory device having consistent skew over entire memory core
SAMSUNG ELECTRONICS CO LTD0 citations52
US7079435B2Jul 18, 2006
Sense amplifier circuit to write data at high speed in high speed semiconductor memory
SAMSUNG ELECTRONICS CO LTD0 citations51
US5640360AJun 17, 1997
Address buffer of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations42