P

Inventor

HAMMOND RICHARD

GB72 patents
⚠️ This page may combine multiple inventors who share the name “HAMMOND RICHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AMBERWAVE SYSTEMS CORP

17 patents
US7420201B2Sep 2, 2008

Strained-semiconductor-on-insulator device structures with elevated source/drain regions

AMBERWAVE SYSTEMS CORP80 citations99
US7074623B2Jul 11, 2006

Methods of forming strained-semiconductor-on-insulator finFET device structures

AMBERWAVE SYSTEMS CORP226 citations99
US6995430B2Feb 7, 2006

Strained-semiconductor-on-insulator device structures

AMBERWAVE SYSTEMS CORP485 citations99
US6583015B2Jun 24, 2003

Gate technology for strained surface channel and strained buried channel MOSFET devices

AMBERWAVE SYSTEMS CORP152 citations99
US7109516B2Sep 19, 2006

Strained-semiconductor-on-insulator finFET device structures

AMBERWAVE SYSTEMS CORP100 citations98
US6900094B2May 31, 2005

Method of selective removal of SiGe alloys

AMBERWAVE SYSTEMS CORP130 citations98
US6831292B2Dec 14, 2004

Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

AMBERWAVE SYSTEMS CORP361 citations98
US7217603B2May 15, 2007

Methods of forming reacted conductive gate electrodes

AMBERWAVE SYSTEMS CORP41 citations96
US6982474B2Jan 3, 2006

Reacted conductive gate electrodes

AMBERWAVE SYSTEMS CORP28 citations96
US7588994B2Sep 15, 2009

Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain

AMBERWAVE SYSTEMS CORP17 citations93
US7297612B2Nov 20, 2007

Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes

AMBERWAVE SYSTEMS CORP16 citations93
US7259388B2Aug 21, 2007

Strained-semiconductor-on-insulator device structures

AMBERWAVE SYSTEMS CORP18 citations93
US6933518B2Aug 23, 2005

RF circuits including transistors having strained material layers

AMBERWAVE SYSTEMS CORP20 citations92
US6846715B2Jan 25, 2005

Gate technology for strained surface channel and strained buried channel MOSFET devices

AMBERWAVE SYSTEMS CORP17 citations92
US6680496B1Jan 20, 2004

Back-biasing to populate strained layer quantum wells

AMBERWAVE SYSTEMS CORP29 citations92
US7414259B2Aug 19, 2008

Strained germanium-on-insulator device structures

AMBERWAVE SYSTEMS CORP4 citations74
US7217668B2May 15, 2007

Gate technology for strained surface channel and strained buried channel MOSFET devices

AMBERWAVE SYSTEMS CORP2 citations63

TAIWAN SEMICONDUCTOR MFG

10 patents

QUALCOMM INC

5 patents

IBM

3 patents

TAIWAN SEMICONDUCTOR MFG CO LTD

3 patents

IQE PLC

3 patents

AGENCY SCIENCE TECH & RES

2 patents

LOCHTEFELD ANTHONY J

1 patent

BRAITHWAITE GLYN

1 patent

LANGDO THOMAS A

1 patent

TYCO HEALTHCARE

1 patent

BAXTER INT

1 patent

CURRIE MATTHEW T

1 patent

COVIDIEN LP

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.