P

Inventor

LIM SUN YOUNG

KR42 patents

Patents

42 patents
USD568975SMay 13, 2008

Wall-mounted air conditioner

SAMSUNG ELECTRONICS CO LTD41 citations92
USD566254SApr 8, 2008

Wall-mounted air conditioner

SAMSUNG ELECTRONICS CO LTD25 citations92
US9830086B2Nov 28, 2017

Hybrid memory controller for arbitrating access to volatile and non-volatile memories in a hybrid memory group

SAMSUNG ELECTRONICS CO LTD6 citations84
US9454496B2Sep 27, 2016

Memory system

SAMSUNG ELECTRONICS CO LTD8 citations84
US11175853B2Nov 16, 2021

Systems and methods for write and flush support in hybrid memory

SAMSUNG ELECTRONICS CO LTD3 citations73
US11048645B2Jun 29, 2021

Memory module, operation method therof, and operation method of host

SAMSUNG ELECTRONICS CO LTD2 citations73
US10592114B2Mar 17, 2020

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD2 citations73
US10347306B2Jul 9, 2019

Self-optimized power management for DDR-compatible memory systems

SAMSUNG ELECTRONICS CO LTD6 citations73
US10169126B2Jan 1, 2019

Memory module, memory controller and systems responsive to memory chip read fail information and related methods of operation

SAMSUNG ELECTRONICS CO LTD4 citations73
US9837135B2Dec 5, 2017

Methods for addressing high capacity SDRAM-like memory without increasing pin cost

SAMSUNG ELECTRONICS CO LTD2 citations73
US9244824B2Jan 26, 2016

Memory sub-system and computing system including the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10083764B2Sep 25, 2018

Memory system capable of re-mapping address

SAMSUNG ELECTRONICS CO LTD3 citations70
US9472305B2Oct 18, 2016

Method of repairing a memory device and method of booting a system including the memory device

SAMSUNG ELECTRONICS CO LTD4 citations70
US9195579B2Nov 24, 2015

Page replacement method and memory system using the same

SAMSUNG ELECTRONICS CO LTD5 citations70
US12468445B2Nov 11, 2025

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US12230356B2Feb 18, 2025

Memory device, memory system, and operating method of memory system

SAMSUNG ELECTRONICS CO LTD0 citations62
US12189546B2Jan 7, 2025

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations62
US12032828B2Jul 9, 2024

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11837317B2Dec 5, 2023

Memory device, memory system, and operating method of memory system

SAMSUNG ELECTRONICS CO LTD0 citations62
US11481149B2Oct 25, 2022

Memory module and memory system relating thereto

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE49151EJul 26, 2022

Memory system and electronic device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11397698B2Jul 26, 2022

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations62
US11294571B2Apr 5, 2022

Coordinated in-module RAS features for synchronous DDR compatible memory

SAMSUNG ELECTRONICS CO LTD0 citations62
US11029879B2Jun 8, 2021

Page size synchronization and page size aware scheduling method for non-volatile memory dual in-line memory module (NVDIMM) over memory channel

SAMSUNG ELECTRONICS CO LTD0 citations62
US10810144B2Oct 20, 2020

System and method for operating a DRR-compatible asynchronous memory module

SAMSUNG ELECTRONICS CO LTD1 citations62
US10521153B2Dec 31, 2019

Computing system, nonvolatile memory module and method of storage device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11614866B2Mar 28, 2023

Nonvolatile memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations61
US11106363B2Aug 31, 2021

Nonvolatile memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations61
US10725672B2Jul 28, 2020

Memory module, memory controller and systems responsive to memory chip read fail information and related methods of operation

SAMSUNG ELECTRONICS CO LTD0 citations52
US10621119B2Apr 14, 2020

Asynchronous communication protocol compatible with synchronous DDR protocol

SAMSUNG ELECTRONICS CO LTD0 citations52
US10504572B2Dec 10, 2019

Methods for addressing high capacity SDRAM-like memory without increasing pin cost

SAMSUNG ELECTRONICS CO LTD0 citations52
US10114560B2Oct 30, 2018

Hybrid memory controller with command buffer for arbitrating access to volatile and non-volatile memories in a hybrid memory group

SAMSUNG ELECTRONICS CO LTD0 citations52
US9620180B2Apr 11, 2017

Memory system and electronic device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9552314B2Jan 24, 2017

Memory system having first and second memory devices and driving method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US10684979B2Jun 16, 2020

Memory system for supporting internal DQ termination of data buffer

SAMSUNG ELECTRONICS CO LTD0 citations51
US10496584B2Dec 3, 2019

Memory system for supporting internal DQ termination of data buffer

SAMSUNG ELECTRONICS CO LTD0 citations51
US9934100B2Apr 3, 2018

Method of controlling memory swap operation and data processing system using same

SAMSUNG ELECTRONICS CO LTD1 citations51
US10303372B2May 28, 2019

Nonvolatile memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations50
US9501424B2Nov 22, 2016

Memory mapping method of nonvolatile memory system and system for providing the memory mapping method

SAMSUNG ELECTRONICS CO LTD0 citations49
US10078448B2Sep 18, 2018

Electronic devices and memory management methods thereof

SAMSUNG ELECTRONICS CO LTD1 citations45
US10692566B2Jun 23, 2020

Interface method of memory system, interface circuitry and memory module

SAMSUNG ELECTRONICS CO LTD0 citations41
US10558388B2Feb 11, 2020

Memory system and method of controlling the same

SAMSUNG ELECTRONICS CO LTD0 citations41