P

Inventor

CHIANG HSIN-CHE

TW62 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG HSIN-CHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

49 patents
US9859273B2Jan 2, 2018

Semiconductor structure and manufacturing process thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10128156B1Nov 13, 2018

FinFET device with reduced parasitic capacitance and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US11923194B2Mar 5, 2024

Epitaxial blocking layer for multi-gate devices and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11315785B2Apr 26, 2022

Epitaxial blocking layer for multi-gate devices and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282705B2Mar 22, 2022

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043567B2Jun 22, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10854506B2Dec 1, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741558B2Aug 11, 2020

Nanosheet CMOS device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10475895B2Nov 12, 2019

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10403737B2Sep 3, 2019

Method of forming a gate structure of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10134873B2Nov 20, 2018

Semiconductor device gate structure and method of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12087844B2Sep 10, 2024

Semiconductor device structure with uniform threshold voltage distribution and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10991805B2Apr 27, 2021

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10529629B2Jan 7, 2020

Methods of forming metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US10714342B2Jul 14, 2020

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12490505B2Dec 2, 2025

Gate dielectric having a non-uniform thickness profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376326B2Jul 29, 2025

Gate resistance improvement and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362229B2Jul 15, 2025

Semiconductor device structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349447B2Jul 1, 2025

Structure and formation method of semiconductor device with dielectric fin

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324235B2Jun 3, 2025

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199164B2Jan 14, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183810B2Dec 31, 2024

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170320B2Dec 17, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027415B2Jul 2, 2024

Semiconductor device structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015077B2Jun 18, 2024

Metal gate using monolayers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923455B2Mar 5, 2024

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848373B2Dec 19, 2023

Semiconductor devices and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11837602B2Dec 5, 2023

Semiconductor device structure having a plurality of threshold voltages and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810978B2Nov 7, 2023

Gate resistance improvement and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11799017B2Oct 24, 2023

Semiconductor device structure with uniform threshold voltage distribution and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756962B2Sep 12, 2023

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670695B2Jun 6, 2023

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670697B2Jun 6, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11521971B2Dec 6, 2022

Gate dielectric having a non-uniform thickness profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476156B2Oct 18, 2022

Semiconductor device structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11374006B2Jun 28, 2022

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282942B2Mar 22, 2022

Semiconductor device structure with uniform threshold voltage distribution and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257924B2Feb 22, 2022

Metal gate using monolayers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145730B2Oct 12, 2021

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11133224B2Sep 28, 2021

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11038059B2Jun 15, 2021

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031500B2Jun 8, 2021

Gate resistance improvement and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018257B2May 25, 2021

Semiconductor device structure having a plurality of threshold voltages and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879393B2Dec 29, 2020

Methods of fabricating semiconductor devices having gate structure with bent sidewalls

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12532533B2Jan 20, 2026

Method for forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11101385B2Aug 24, 2021

Fin field effect transistor (FinFET) device structure with air gap and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12581703B2Mar 17, 2026

Multilayer gate isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11295990B2Apr 5, 2022

Methods of forming metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12507439B2Dec 23, 2025

Method for forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56

UNIV NAT CHENG KUNG

1 patent

Showing the top 50 of 62 patents by PatentIndex Score.