Inventor

WANG TZU-CHUNG

TW40 patents

⚠️ This page may combine multiple inventors who share the name “WANG TZU-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG TZU-CHUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Methods for producing nanowire stack GAA device with inner spacer

Method and related apparatus for integrating electronic memory in an integrated chip

Semiconductor device with fin end spacer plug and method of manufacturing the same

Semiconductor devices and methods of manufacturing thereof

Transistor with a negative capacitance and a method of creating the same

Method and related apparatus for integrating electronic memory in an integrated chip

Transistor with a negative capacitance and a method of creating the same

Multi-layer dielectric refill for profile control in semiconductor devices

Multi-layer dielectric refill for profile control in semiconductor devices

Semiconductor device and manufacturing method thereof

Semiconductor devices and methods of manufacturing thereof

Semiconductor devices and methods of manufacturing thereof

Nanowire stack GAA device with inner spacer

Nanowire stack GAA device with inner spacer

Transistor with a negative capacitance and a method of creating the same

Multi-layer dielectric refill for profile control in semiconductor devices

Method and related apparatus for integrating electronic memory in an integrated chip

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Semiconductor device with fin end spacer plug and method of manufacturing the same

Fin field-effect transistor and method of forming the same

Fin Field-Effect Transistor and method of forming the same

Semiconductor device with fin end spacer and method of manufacturing the same

Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same

Semiconductor device with fin end spacer plug and method of manufacturing the same

Fin field-effect transistor and method of forming the same

Transistor with a negative capacitance and a method of creating the same

Semiconductor device with fin end spacer and method of manufacturing the same

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Semiconductor device with gate dielectric formed using selective deposition

Semiconductor device including an epitaxy region

Semiconductor device with gate dielectric formed using selective deposition

Method for making semiconductor device with gate profile control

Semiconductor device including an epitaxy region

Semiconductor arrangement and formation thereof

JOJOMO ENTPR CO LTD

Food container

Food container

(unassigned)

Toy fireman

TU CHE-HAO

Gate height loss improvement for a transistor

TAIWAN SEMICONDUCTOR MFG

Semiconductor arrangement and formation thereof

PAN TE-JEN

Semiconductor device including an epitaxy region