Inventor · disambiguated record
Sharon Shi
Also filed as: SHI SHARON
16 granted patents·3 pending applications·209 citations·filing 2004–2016
93Inventor score
Top patents by PatentIndex Score
19 records- 0197US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 0294US7557409B2Super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2007·Granted Jul 7, 2009·26 cites·2 claims
- 0385US9425306B2Super junction trench power MOSFET devicesGAO YANG·Filed 2009·Granted Aug 23, 2016·12 cites·11 claims
- 0483US9443974B2Super junction trench power MOSFET device fabricationGAO YANG·Filed 2009·Granted Sep 13, 2016·11 cites·9 claims
- 0583US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 0680US8409954B2Ultra-low drain-source resistance power MOSFETCHAU THE-TU·Filed 2006·Granted Apr 2, 2013·8 cites·7 claims
- 0779US9431530B2Super-high density trench MOSFETXU ROBERT Q·Filed 2010·Granted Aug 30, 2016·5 cites·15 claims
- 0876US9419129B2Split gate semiconductor device with curved gate oxide profileGAO YANG·Filed 2009·Granted Aug 16, 2016·5 cites·13 claims
- 0975US7704836B2Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2008·Granted Apr 27, 2010·4 cites·7 claims
- 1071US9484451B2MOSFET active area and edge termination area charge balanceCHEN QUFEI·Filed 2008·Granted Nov 1, 2016·4 cites·15 claims
- 1170US10084037B2MOSFET active area and edge termination area charge balanceVISHAY SILICONIX·Filed 2016·Granted Sep 25, 2018·1 cites·20 claims
- 1269US9893168B2Split gate semiconductor device with curved gate oxide profileVISHAY SILICONIX·Filed 2016·Granted Feb 13, 2018·1 cites·9 claims
- 1367US9230810B2System and method for substrate wafer back side and edge cross section sealsLU HAMILTON·Filed 2010·Granted Jan 5, 2016·2 cites·2 claims
- 1460US8883580B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2012·Granted Nov 11, 2014·1 cites·6 claims
- 1554US2010019316A1Method of fabricating super trench MOSFET including buried source electrodeSILICONIX INC·Filed 2009·Application pending·0 cites
- 1651US10546750B2System and method for substrate wafer back side and edge cross section sealsVISHAY SILICONIX·Filed 2016·Granted Jan 28, 2020·0 cites·5 claims
- 1750US9887266B2Ultra-low drain-source resistance power MOSFETCHAU THE TU·Filed 2008·Granted Feb 6, 2018·0 cites·17 claims
- 1838US2012211828A1Hybrid split gate semiconductorBOBDE MADHUR·Filed 2012·Application pending·0 cites
- 1938US2012220092A1Method of forming a hybrid split gate simiconductorBOBDE MADHUR·Filed 2012·Application pending·0 cites
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