Inventor · disambiguated record
Mickey H. Yu
Also filed as: YU MICKEY · YU MICKEY H
19 granted patents·2 pending applications·142 citations·filing 1999–2021
93Inventor score
Top patents by PatentIndex Score
21 records- 0198US9431399B1Method for forming merged contact for semiconductor deviceIBM·Filed 2015·Granted Aug 30, 2016·31 cites·20 claims
- 0296US9312274B1Merged fin structures for finFET devicesIBM·Filed 2014·Granted Apr 12, 2016·27 cites·20 claims
- 0395US10008491B1Low capacitance electrostatic discharge (ESD) devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·14 cites·20 claims
- 0494US8536018B1Maskless inter-well deep trench isolation structure and methods of manufactureANDERSON BRENT A·Filed 2012·Granted Sep 17, 2013·19 cites·19 claims
- 0590US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 0689US10636872B1Apparatus and method to prevent integrated circuit from entering latch-up modeGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·4 cites·20 claims
- 0788US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 0886US8028924B2Device and method for providing an integrated circuit with a unique identificationIBM·Filed 2009·Granted Oct 4, 2011·15 cites·21 claims
- 0975US10361293B1Vertical fin-type devices and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·16 claims
- 1073US7723178B2Shallow and deep trench isolation structures in semiconductor integrated circuitsIBM·Filed 2008·Granted May 25, 2010·5 cites·20 claims
- 1169US11791626B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1266US9818873B2Forming stressed epitaxial layers between gates separated by different pitchesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 14, 2017·1 cites·14 claims
- 1358US11444149B1Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 13, 2022·0 cites·19 claims
- 1457US11637173B2Structure including polycrystalline resistor with dopant-including polycrystalline region thereunderGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 25, 2023·0 cites·18 claims
- 1554US11201466B2Electrostatic discharge clamp structuresGLOBALFOUNDRIES US INC·Filed 2018·Granted Dec 14, 2021·0 cites·18 claims
- 1644US10692852B2Silicon-controlled rectifiers with wells laterally isolated by trench isolation regionsGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 1744US10541236B2Electrostatic discharge devices with reduced capacitanceGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 21, 2020·0 cites·14 claims
- 1843US6121064ASTI fill for SOI which makes SOI inspectableIBM·Filed 1999·Granted Sep 19, 2000·12 cites·27 claims
- 1943US2009267156A1Device structures including dual-depth trench isolation regions and design structures for a static random access memoryIBM·Filed 2008·Application pending·0 cites
- 2043US2009269897A1Methods of fabricating dual-depth trench isolation regions for a memory cellIBM·Filed 2008·Application pending·0 cites
- 2141US10741685B2Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 11, 2020·0 cites·14 claims
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