Inventor · disambiguated record
Ricky S. Amos
Also filed as: AMOS RICKY · AMOS RICKY S
15 granted patents·3 pending applications·470 citations·filing 1999–2009
94Inventor score
Top patents by PatentIndex Score
18 records- 0197US6916698B2High performance CMOS device structure with mid-gap metal gateIBM·Filed 2004·Granted Jul 12, 2005·139 cites·8 claims
- 0295US7326610B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2005·Granted Feb 5, 2008·34 cites·13 claims
- 0394US6846734B2Method and process to make multiple-threshold metal gates CMOS technologyIBM·Filed 2002·Granted Jan 25, 2005·105 cites·27 claims
- 0493US6762469B2High performance CMOS device structure with mid-gap metal gateIBM·Filed 2002·Granted Jul 13, 2004·68 cites·5 claims
- 0590US7029966B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2003·Granted Apr 18, 2006·53 cites·2 claims
- 0689US7960798B2Structure and method to form multilayer embedded stressorsIBM·Filed 2009·Granted Jun 14, 2011·11 cites·10 claims
- 0788US7618866B2Structure and method to form multilayer embedded stressorsIBM·Filed 2006·Granted Nov 17, 2009·11 cites·9 claims
- 0883US7056782B2CMOS silicide metal gate integrationIBM·Filed 2004·Granted Jun 6, 2006·25 cites·19 claims
- 0982US7459382B2Field effect device with reduced thickness gateIBM·Filed 2006·Granted Dec 2, 2008·9 cites·1 claims
- 1081US7411227B2CMOS silicide metal gate integrationIBM·Filed 2006·Granted Aug 12, 2008·7 cites·16 claims
- 1174US7655557B2CMOS silicide metal gate integrationIBM·Filed 2008·Granted Feb 2, 2010·4 cites·9 claims
- 1264US7863083B2High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2008·Granted Jan 4, 2011·1 cites·18 claims
- 1346US7479436B2Feed forward silicide control scheme based on spacer height controlling preclean timeIBM·Filed 2006·Granted Jan 20, 2009·0 cites·20 claims
- 1445US8492803B2Field effect device with reduced thickness gateAMOS RICKY S·Filed 2008·Granted Jul 23, 2013·0 cites·16 claims
- 1540US2003098489A1High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2001·Application pending·0 cites
- 1638US2005106788A1Method and process to make multiple-threshold metal gates CMOS technologyIBM·Filed 2004·Application pending·0 cites
- 1737US2002137300A1Thermally stable polycrystal to single crystal electrical contact structureIBM·Filed 2002·Application pending·0 cites
- 1830US6429101B1Method of forming thermally stable polycrystal to single crystal electrical contact structureIBM·Filed 1999·Granted Aug 6, 2002·3 cites·57 claims
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