Inventor

WILLER JOSEF

DE112 patents

⚠️ This page may combine multiple inventors who share the name “WILLER JOSEF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WILLER JOSEF

INFINEON TECHNOLOGIES AG

Capacitorless 1-transistor DRAM cell and fabrication method

Non-volatile memory cell and fabrication method

Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array

Memory cell, memory cell arrangement and fabrication method

Electrically programmable memory cell array, using charge carrier traps and insulation trenches

Method for fabricating a memory cell

Memory cell and production method

Method for manufacturing a multi-bit memory cell

Integrated circuit configuration and method for manufacturing it

Method for fabricating a memory cell having a MOS transistor

Memory cell with nanocrystals or nanodots

Flash memory cell, flash memory device and manufacturing method thereof

Charge-trapping memory device including high permittivity strips

Charge-trapping memory cell array and method for production

Semiconductor memory having charge trapping memory cells and fabrication method thereof

Integrated circuit configuration and method of fabricating a dram structure with buried bit lines or trench capacitors

Integrated memory device and method for operating the same

Semiconductor memory device comprising memory cells with floating gate electrode and method of production

Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangement

Memory cell array comprising individually addressable memory cells and method of making the same

Electrically programmable memory cell configuration and method for fabricating it

Memory cell arrangement

Mos transistor and dram cell configuration

DRAM cell configuration and fabrication method

Memory cell with trench transistor

DRAM cell system and method for producing same

Multi-bit virtual-ground NAND memory device

Method for programming multi-bit charge-trapping memory cell arrays

Method for producing semiconductor memory devices and integrated memory device

SOI DRAM without floating body effect

Integrated circuit configuration with at least one capacitor and method for producing the same

SIEMENS AG

Memory cell arrangement with vertical MOS transistors and the production process thereof

Memory cell configuration and method for its fabrication

Method for manufacturing a solar cell from a substrate wafer

Electrically programmable memory cell configuration

Method of operating a storage cell arrangement

Process for producing a silicon capacitor

Method for manufacturing a solar cell from a substrate wafer

Method for the manufacture of a MESFET comprising self aligned gate

Method for the manufacture of a self-aligned metal contact

SRAM cell arrangement and method for manufacturing same

QIMONDA AG

Integrated circuit having a cell with a resistivity changing layer

Method of manufacturing at least one semiconductor component and memory cells

Integrated circuit including a first gate stack and a second gate stack and a method of manufacturing

Integrated circuit having NAND memory cell strings

Memory device and method providing logic connections for data transfer

MICRONAS GMBH

Method of determining very small capacitances

INGENTIX GMBH & CO KG

NROM memory circuit with recessed bitline

INFINEON TECHNOLOGIES FLASH GM

Capacitorless 1-transistor DRAM cell and fabrication method

INFINEON AG

DRAM cell arrangement