Inventor · disambiguated record
Tomoyuki Obu
Also filed as: OBU TOMOYUKI
15 granted patents·4 pending applications·204 citations·filing 2013–2023
92Inventor score
Files withSANDISK TECHNOLOGIES LLC8TOKYO ELECTRON LTD8SANDISK TECHNOLOGIES INC1TOKYO ELECTRONIC LTD1WESTERN DIGITAL TECH INC1
Top patents by PatentIndex Score
19 records- 0197US11121153B1Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 14, 2021·9 cites·13 claims
- 0297US10355100B1Field effect transistors having different stress control liners and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·39 cites·9 claims
- 0395US11127759B2Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 21, 2021·15 cites·20 claims
- 0495US10615123B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 7, 2020·11 cites·10 claims
- 0595US10121794B2Three-dimensional memory device having epitaxial germanium-containing vertical channel and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 6, 2018·33 cites·18 claims
- 0695US9419012B1Three-dimensional memory structure employing air gap isolationSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 16, 2016·67 cites·14 claims
- 0794US10229931B1Three-dimensional memory device containing fluorine-free tungsten—word lines and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 12, 2019·19 cites·18 claims
- 0886US11217532B2Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 4, 2022·4 cites·18 claims
- 0977US9343292B2Stacked semiconductor device, and method and apparatus of manufacturing the sameTOKYO ELECTRON LTD·Filed 2014·Granted May 17, 2016·3 cites·4 claims
- 1073US9293323B2Method of forming silicon filmTOKYO ELECTRON LTD·Filed 2013·Granted Mar 22, 2016·3 cites·9 claims
- 1159US2025071998A1Three-dimensional memory device with source contact layer having horizontally and vertically extending portions and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1258US9378944B2Method and apparatus of forming carbon filmTOKYO ELECTRON LTD·Filed 2013·Granted Jun 28, 2016·1 cites·18 claims
- 1347US10115899B1Methods and apparatus for three-dimensional nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·0 cites·20 claims
- 1446US9006115B2Silicon oxide film forming method and apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Apr 14, 2015·0 cites·6 claims
- 1544US9425040B2Method of forming laminated film and forming apparatus thereofTOKYO ELECTRON LTD·Filed 2013·Granted Aug 23, 2016·0 cites·11 claims
- 1643US9263256B2Method of forming seed layer, method of forming silicon film, and film forming apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Feb 16, 2016·0 cites·11 claims
- 1742US2014011371A1Silicon oxide film forming method and apparatusTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 1841US2014295675A1Silicon oxide film forming method and silicon oxide film forming apparatusTOKYO ELECTRONIC LTD·Filed 2014·Application pending·0 cites
- 1940US2014251209A1Support member and semiconductor manufacturing apparatusTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →