Inventor · disambiguated record
Hudson M. Hobgood
Also filed as: HOBGOOD HUDSON M · HOBGOOD HUDSON MCDONALD
24 granted patents·4 pending applications·535 citations·filing 1984–2013
97Inventor score
Files withCREE INC16JENNY JASON RONALD2MUELLER STEPHAN G2NORTHROP GRUMMAN CORP2WESTINGHOUSE ELECTRIC CORP2
Top patents by PatentIndex Score
28 records- 0195US7323051B2One hundred millimeter single crystal silicon carbide waferCREE INC·Filed 2005·Granted Jan 29, 2008·30 cites·27 claims
- 0295US7316747B2Seeded single crystal silicon carbide growth and resulting crystalsCREE INC·Filed 2005·Granted Jan 8, 2008·34 cites·68 claims
- 0394US8147991B2One hundred millimeter single crystal silicon carbide waferJENNY JASON RONALD·Filed 2010·Granted Apr 3, 2012·16 cites·25 claims
- 0491US6849874B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2001·Granted Feb 1, 2005·30 cites·42 claims
- 0591US6814801B2Method for producing semi-insulating resistivity in high purity silicon carbide crystalsCREE INC·Filed 2002·Granted Nov 9, 2004·63 cites·43 claims
- 0691US5611955AHigh resistivity silicon carbide substrates for high power microwave devicesNORTHROP GRUMMAN CORP·Filed 1993·Granted Mar 18, 1997·143 cites·13 claims
- 0790US7427326B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2006·Granted Sep 23, 2008·7 cites·20 claims
- 0889US7601441B2One hundred millimeter high purity semi-insulating single crystal silicon carbide waferCREE INC·Filed 2004·Granted Oct 13, 2009·27 cites·30 claims
- 0985US7414268B2High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Aug 19, 2008·12 cites·21 claims
- 1084US8163086B2Halogen assisted physical vapor transport method for silicon carbide growthMUELLER STEPHAN G·Filed 2007·Granted Apr 24, 2012·6 cites·30 claims
- 1183US7147715B2Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogenCREE INC·Filed 2003·Granted Dec 12, 2006·20 cites·42 claims
- 1281US9059118B2Method for producing semi-insulating resistivity in high purity silicon carbide crystalsJENNY JASON RONALD·Filed 2009·Granted Jun 16, 2015·6 cites·5 claims
- 1381US8618553B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCARTER JR CALVIN H·Filed 2010·Granted Dec 31, 2013·2 cites·12 claims
- 1481US7391057B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Jun 24, 2008·9 cites·18 claims
- 1581US6974720B2Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed therebyCREE INC·Filed 2003·Granted Dec 13, 2005·25 cites·13 claims
- 1678US7220313B2Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambientCREE INC·Filed 2003·Granted May 22, 2007·15 cites·26 claims
- 1772US4594173AIndium doped gallium arsenide crystals and method of preparationWESTINGHOUSE ELECTRIC CORP·Filed 1984·Granted Jun 10, 1986·17 cites·6 claims
- 1871US5667587AApparatus for growing silicon carbide crystalsNORTHROP GRUMAN CORP·Filed 1996·Granted Sep 16, 1997·39 cites·8 claims
- 1965US6964917B2Semi-insulating silicon carbide produced by Neutron transmutation dopingCREE INC·Filed 2003·Granted Nov 15, 2005·9 cites·31 claims
- 2057US7615801B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Nov 10, 2009·1 cites·24 claims
- 2157US2012167825A1Halogen assisted physical vapor transport method for silicon carbide growthMUELLER STEPHAN G·Filed 2012·Application pending·0 cites
- 2255US7811943B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCREE INC·Filed 2005·Granted Oct 12, 2010·0 cites·45 claims
- 2355US5937317AMethod of making a low resistivity silicon carbide bouleNORTHROP GRUMMAN CORP·Filed 1997·Granted Aug 10, 1999·12 cites·7 claims
- 2450US7880171B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2004·Granted Feb 1, 2011·0 cites·27 claims
- 2550US2013181231A1Micropipe-free silicon carbide and related method of manufactureCREE INC·Filed 2013·Application pending·0 cites
- 2643US2004206298A1Method for producing semi-insulating resistivity in high purity silicon carbide crystalsFiled 2004·Application pending·0 cites
- 2741US2006261346A1High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the sameRYU SEI-HYUNG·Filed 2005·Application pending·0 cites
- 2840US5501173AMethod for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substratesWESTINGHOUSE ELECTRIC CORP·Filed 1993·Granted Mar 26, 1996·12 cites·5 claims
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