Inventor

HO CHIA-CHENG

TW51 patents

⚠️ This page may combine multiple inventors who share the name “HO CHIA-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HO CHIA-CHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of manufacturing a fin-like field effect transistor (FinFET) device

Field plate structure to enhance transistor breakdown voltage

Transistor with a negative capacitance and a method of creating the same

Field plate structure to enhance transistor breakdown voltage

Dual nitride stressor for semiconductor device and method of manufacturing

Semiconductor structure and testing method thereof

Semiconductor test device and manufacturing method thereof

Transistor with a negative capacitance and a method of creating the same

Semiconductor test device and manufacturing method thereof

Short channel effect suppression

Field plate structure for high voltage device

Contact field plate

Field plate structure for high voltage device

Field plate and isolation structure for high voltage device

Strained transistor with conductive plate

FinFETs and the methods for forming the same

Semiconductor device and manufacturing method thereof

Semiconductor structure and method of manufacturing the same

Transistor with a negative capacitance and a method of creating the same

Ferroelectric semiconductor device and method

Field plate structure to enhance transistor breakdown voltage

Field plate structure for high voltage device

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Semiconductor structure and testing method thereof

Ferroelectric semiconductor device and method

Ferroelectric semiconductor device and method

Semiconductor test device and manufacturing method thereof

Semiconductor device with Fin end spacer dummy gate and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Transistor with a negative capacitance and a method of creating the same

Semiconductor device with fin end spacer dummy gate and method of manufacturing the same

Method of manufacturing a semiconductor device having a gate with ferroelectric layer

Fin patterning for semiconductor devices

Field plate and isolation structure for high voltage device

Dual nitride stressor for semiconductor device and method of manufacturing

Method of forming semiconductor device with different threshold voltages

Asymmetric source/drain depths

Asymmetric source/drain depths

Schottky diode and method for forming the same

Methods of forming semiconductor devices and structures thereof

Short channel effect suppression

TAIWAN SEMICONDUCTOR MFG

FinFETs and the methods for forming the same

FinFETs and the methods for forming the same

Method of forming semiconductor device with different threshold voltages

Monitor test key of epi profile

HO CHIA-CHENG

FinFETs and the methods for forming the same

FinFETs and the methods for forming the same

PERNG TSU-HSIU

Fin-like field effect transistor (FinFET) device and method of manufacturing same

SHIEH MING-FENG

Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device

CHANG CHIH-SHENG

Monitor test key of epi profile