Inventor
CHIU JUNG-PIAO
TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHIU JUNG-PIAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS10062782B2Aug 28, 2018
Method of manufacturing a semiconductor device with multilayered channel structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11837611B2Dec 5, 2023
Data storage element and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342380B2May 24, 2022
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11158742B2Oct 26, 2021
Method of manufacturing a semiconductor device with multilayered channel structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10038080B1Jul 31, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12389694B2Aug 12, 2025
Data storage element and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336192B2Jun 17, 2025
Method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12232331B2Feb 18, 2025
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12217817B2Feb 4, 2025
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12161055B2Dec 3, 2024
Memory array, semiconductor chip and manufacturing method of memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12120968B2Oct 15, 2024
Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041790B2Jul 16, 2024
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963369B2Apr 16, 2024
Memory array with asymmetric bit-line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11805662B2Oct 31, 2023
Memory devices with selector layer and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11763857B2Sep 19, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11737287B2Aug 22, 2023
Memory device, method of forming the same, and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11647682B2May 9, 2023
Memory array, semiconductor chip and manufacturing method of memory array
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11605779B2Mar 14, 2023
Memory cell, method of forming the same, and semiconductor die
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594576B2Feb 28, 2023
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11482571B2Oct 25, 2022
Memory array with asymmetric bit-line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12507600B2Dec 23, 2025
Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727344B2Jul 28, 2020
Method of manufacturing a semiconductor device with multilayered channel structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10700205B2Jun 30, 2020
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283639B2May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9659826B2May 23, 2017
Asymmetric source/drain depths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9515071B2Dec 6, 2016
Asymmetric source/drain depths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52