Inventor · disambiguated record
Sam Geha
Also filed as: GEHA SAM · GEHA SAM G
26 granted patents·3 pending applications·568 citations·filing 1992–2023
97Inventor score
Files withCYPRESS SEMICONDUCTOR CORP15Longitude Flash Memory Solutions Ltd9LEVY SAGY2KOUTNY JR WILLIAM W C1SILICON MAGNETIC SYSTEMS1
Top patents by PatentIndex Score
29 records- 0197US9449831B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2012·Granted Sep 20, 2016·22 cites·5 claims
- 0297US9355849B1Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 31, 2016·19 cites·17 claims
- 0396US8643124B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2011·Granted Feb 4, 2014·27 cites·18 claims
- 0495US9349824B2Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted May 24, 2016·18 cites·7 claims
- 0595US8093128B2Integration of non-volatile charge trap memory devices and logic CMOS devicesKOUTNY JR WILLIAM W C·Filed 2008·Granted Jan 10, 2012·89 cites·14 claims
- 0694US6803318B1Method of forming self aligned contactsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Oct 12, 2004·94 cites·16 claims
- 0793US7205164B1Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methodsSILICON MAGNETIC SYSTEMS·Filed 2005·Granted Apr 17, 2007·35 cites·18 claims
- 0888US10374067B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Aug 6, 2019·3 cites·19 claims
- 0985US6140228ALow temperature metallization processCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Oct 31, 2000·69 cites·24 claims
- 1085US2024234550A1Oxide-Nitride-Oxide Stack Having Multiple Oxynitride LayersLongitude Flash Memory Solutions Ltd·Filed 2023·Application pending·0 cites
- 1182US12266521B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 1, 2025·0 cites·16 claims
- 1282US5339039ALangmuir probe system for radio frequency excited plasma processing systemUNIV ARIZONA·Filed 1992·Granted Aug 16, 1994·53 cites·22 claims
- 1378US11784243B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 1477US6756302B1Low temperature metallization processCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 29, 2004·19 cites·23 claims
- 1574US10903068B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2016·Granted Jan 26, 2021·1 cites·18 claims
- 1674US6693042B1Method for etching a dielectric layer formed upon a barrier layerCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Feb 17, 2004·17 cites·16 claims
- 1774US5977638AEdge metal for interconnect layersCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Nov 2, 1999·49 cites·44 claims
- 1873US11222965B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Jan 11, 2022·1 cites·14 claims
- 1973US2021249254A1Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2021·Application pending·0 cites
- 2071US10903342B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jan 26, 2021·1 cites·20 claims
- 2170US10896973B2Oxide-nitride-oxide stack having multiple oxynitride layersLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Jan 19, 2021·1 cites·20 claims
- 2257US6627547B2Hot metallization processCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Sep 30, 2003·4 cites·22 claims
- 2356US6756315B1Method of forming contact openingsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Jun 29, 2004·7 cites·25 claims
- 2456US2009179253A1Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2007·Application pending·0 cites
- 2554US6187667B1Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Feb 13, 2001·16 cites·19 claims
- 2649US6534398B2Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuitCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Mar 18, 2003·2 cites·36 claims
- 2744US5968851AControlled isotropic etch process and method of forming an opening in a dielectric layerCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Oct 19, 1999·11 cites·18 claims
- 2838US6309971B1Hot metallization processCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Oct 30, 2001·5 cites·22 claims
- 2935US6156645AMethod of forming a metal layer on a substrate, including formation of wetting layer at a high temperatureCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Dec 5, 2000·5 cites·21 claims
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