Inventor · disambiguated record
Craig Huffman
Also filed as: HUFFMAN CRAIG · HUFFMAN CRAIG H · HUFFMAN CRAIG HENRY
8 granted patents·4 pending applications·88 citations·filing 2003–2012
86Inventor score
Files withTEXAS INSTRUMENTS INC6LEE BYOUNG H2EKBOTE SHASHANK SURESHCHANDRA1MEHRAD FREIDOON1STATHAM KELLY1
Top patents by PatentIndex Score
12 records- 0191US7737015B2Formation of fully silicided gate with oxide barrier on the source/drain silicide regionsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 15, 2010·25 cites·33 claims
- 0289US7094650B2Gate electrode for FinFET deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 22, 2006·20 cites·20 claims
- 0381US6780756B1Etch back of interconnect dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 24, 2004·27 cites·42 claims
- 0468US8119470B2Mitigation of gate to contact capacitance in CMOS flowEKBOTE SHASHANK SURESHCHANDRA·Filed 2007·Granted Feb 21, 2012·6 cites·10 claims
- 0563US8236686B2Dual metal gates using one metal to alter work function of another metalLEE BYOUNG H·Filed 2008·Granted Aug 7, 2012·4 cites·14 claims
- 0660US8483412B2Variable pattern hanging microphone system with remote polar controlSTATHAM KELLY·Filed 2010·Granted Jul 9, 2013·2 cites·15 claims
- 0760US7960234B2Multiple-gate MOSFET device and associated manufacturing methodsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 14, 2011·2 cites·14 claims
- 0859US8574980B2Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related deviceMEHRAD FREIDOON·Filed 2007·Granted Nov 5, 2013·2 cites·18 claims
- 0950US2009321846A1Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related DeviceTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1043US2008268589A1Shallow trench divot control postTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 1139US2004169279A1Etch back of interconnect dielectricsFiled 2003·Application pending·0 cites
- 1238US2012256270A1Dual metal gates using one metal to alter work function of another metalLEE BYOUNG H·Filed 2012·Application pending·0 cites
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