Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related Device

Abstract

A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.

1 . A semiconductor device comprising:
 a substrate comprising an N-type active area;   an isolation structure abutting the N-type active area;   a P-type active area abutting the isolation structure;   an N-type gate on the N-type active area, the N-type gate having a first thickness; and   a P-type gate on the P-type active area, the P-type gate having a second thickness different than the first thickness.   
   
   
       2 . The semiconductor device according to  claim 1  wherein the first thickness is about 800 Angstroms and the second thickness is about 600 Angstroms. 
   
   
       3 . The semiconductor device according to  claim 1  wherein the second thickness is about 75 percent of the first thickness. 
   
   
       4 . The semiconductor device according to  claim 1  wherein the first thickness is greater than the second thickness by greater than about 20 Angstroms.