Inventor · disambiguated record
Shaofeng Yu
Also filed as: YU SHAOFENG
53 granted patents·19 pending applications·511 citations·filing 1999–2024
98Inventor score
Files withTEXAS INSTRUMENTS INC32INTEL CORP10SEMICONDUCTOR MFG INT SHANGHAI CORP6BENAISSA KAMEL3YU SHAOFENG3
Top patents by PatentIndex Score
72 records- 0196US7189627B2Method to improve SRAM performance and stabilityTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 13, 2007·131 cites·21 claims
- 0294US7968957B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2010·Granted Jun 28, 2011·11 cites·20 claims
- 0392US7838356B2Gate dielectric first replacement gate processes and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Nov 23, 2010·21 cites·24 claims
- 0492US7148097B2Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistorsTEXAS INSTRUMENTS INC·Filed 2005·Granted Dec 12, 2006·26 cites·17 claims
- 0591US8467233B2Asymmetric static random access memory cell with dual stress linerYU SHAOFENG·Filed 2011·Granted Jun 18, 2013·19 cites·16 claims
- 0690US7229871B2Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistorsTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 12, 2007·19 cites·18 claims
- 0790US7223679B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2003·Granted May 29, 2007·34 cites·26 claims
- 0889US8372703B2Gate dielectric first replacement gate processes and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2010·Granted Feb 12, 2013·10 cites·11 claims
- 0988US7416949B1Fabrication of transistors with a fully silicided gate electrode and channel strainTEXAS INSTRUMENTS INC·Filed 2007·Granted Aug 26, 2008·14 cites·15 claims
- 1086US7642610B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2007·Granted Jan 5, 2010·7 cites·17 claims
- 1185US7084471B2Photosensitive deviceINTEL CORP·Filed 2005·Granted Aug 1, 2006·6 cites·26 claims
- 1283US8237234B2Transistor gate electrode having conductor material layerMURTHY ANAND·Filed 2011·Granted Aug 7, 2012·4 cites·24 claims
- 1383US8062966B2Method for integration of replacement gate in CMOS flowMEHRAD FREIDO·Filed 2009·Granted Nov 22, 2011·19 cites·20 claims
- 1481US9607995B2Semiconductor structure and fabrication method thereof, and static random access memory cellSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Mar 28, 2017·3 cites·10 claims
- 1581US7231463B2Multi-level ring peer-to-peer network structure for peer and object discoveryINTEL CORP·Filed 2002·Granted Jun 12, 2007·38 cites·21 claims
- 1679US7157358B2Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Jan 2, 2007·20 cites·19 claims
- 1778US7692258B2Photosensitive deviceINTEL CORP·Filed 2006·Granted Apr 6, 2010·3 cites·13 claims
- 1875US9455255B2Fin-type field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Sep 27, 2016·2 cites·10 claims
- 1975US7253049B2Method for fabricating dual work function metal gatesTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 7, 2007·19 cites·30 claims
- 2074US10236216B2Method for manufacturing a semiconductor device having a fin located on a substrateSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Mar 19, 2019·2 cites·10 claims
- 2173US7396716B2Method to obtain fully silicided poly gateTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 8, 2008·4 cites·16 claims
- 2273US7148143B2Semiconductor device having a fully silicided gate electrode and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 12, 2006·15 cites·18 claims
- 2373US6903432B2Photosensitive deviceINTEL CORP·Filed 2003·Granted Jun 7, 2005·13 cites·19 claims
- 2472US11402457B2System and method for integrated test on primary-secondary pole-mounted breakerZHEJIANG HUADIAN EQUIPMENT TESTING INST CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·18 claims
- 2572US8558318B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesPINTO ANGELO·Filed 2011·Granted Oct 15, 2013·2 cites·6 claims
- 2671US7943456B2Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted May 17, 2011·4 cites·19 claims
- 2771US7547596B2Method of enhancing drive current in a transistorTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 16, 2009·4 cites·17 claims
- 2870US9590031B2Fin-type field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Mar 7, 2017·2 cites·18 claims
- 2970US8405154B2Low cost transistors using gate orientation and optimized implantsBENAISSA KAMEL·Filed 2011·Granted Mar 26, 2013·2 cites·3 claims
- 3070US7892908B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesTEXAS INSTRUMENTS INC·Filed 2008·Granted Feb 22, 2011·2 cites·14 claims
- 3170US7687396B2Method of forming silicided gates using buried metal layersTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 30, 2010·4 cites·19 claims
- 3269US9516757B2Electric connector, plug-in module thereof and method for manufacturing plug-in moduleDELTA ELECTRONICS (CHEN ZHOU) CO LTD·Filed 2015·Granted Dec 6, 2016·2 cites·19 claims
- 3369US7338888B2Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 4, 2008·12 cites·16 claims
- 3469US6410359B2Reduced leakage trench isolationINTEL CORP·Filed 2001·Granted Jun 25, 2002·12 cites·6 claims
- 3567US7994009B2Low cost transistors using gate orientation and optimized implantsBENAISSA KAMEL·Filed 2009·Granted Aug 9, 2011·2 cites·17 claims
- 3665US8901675B2CMOS devices and fabrication methodSEMICONDUCTOR MFG INT CORP·Filed 2012·Granted Dec 2, 2014·2 cites·20 claims
- 3765US7585738B2Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 8, 2009·2 cites·13 claims
- 3863US7727842B2Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 1, 2010·2 cites·20 claims
- 3961US7871916B2Transistor gate electrode having conductor material layerINTEL CORP·Filed 2009·Granted Jan 18, 2011·0 cites·10 claims
- 4059US8574980B2Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related deviceMEHRAD FREIDOON·Filed 2007·Granted Nov 5, 2013·2 cites·18 claims
- 4156US9123570B2Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substratesTEXAS INSTRUMENTS INC·Filed 2013·Granted Sep 1, 2015·0 cites·6 claims
- 4254US2025005496A1Method and device of long-distance punching for power generation enterprisesCHINA SOUTHERN POWER GRID ENERGY STORAGE CO LTD INFORMATION AND COMMUNICATION BRANCH·Filed 2024·Application pending·0 cites
- 4353US9412869B2MOSFET with source side only stressTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 9, 2016·0 cites·3 claims
- 4453US2024230788A9Computerized simulation validation for full-scale testingZHEJIANG HUADIAN EQUIPMENT TESTING AND RES INSTITUTE CO LTD·Filed 2023·Application pending·0 cites
- 4553US2020027966A1Semiconductor device and manufacture thereofSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2019·Application pending·0 cites
- 4651US2019164845A1Semiconductor device and manufacturing method thereforSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Application pending·0 cites
- 4750US2009321846A1Method of Forming Fully Silicided NMOS and PMOS Semiconductor Devices Having Independent Polysilicon Gate Thicknesses, and Related DeviceTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 4850US2010167472A1Implantation shadowing effect reduction using thermal bake processTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 4950US2008315328A1Dual poly deposition and through gate oxide implantsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 5050US2008265345A1Method of Forming a Fully Silicided Semiconductor Device with Independent Gate and Source/Drain Doping and Related DeviceTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
Showing the top 50 of 72 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →