Inventor
ZDEBEL PETER J
DE44 patents
⚠️ This page may combine multiple inventors who share the name “ZDEBEL PETER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
24 patentsUS5712501AJan 27, 1998
Graded-channel semiconductor device
MOTOROLA INC187 citations98
US6118171ASep 12, 2000
Semiconductor device having a pedestal structure and method of making
MOTOROLA INC65 citations96
US5886374AMar 23, 1999
Optically sensitive device and method
MOTOROLA INC68 citations95
US5067002ANov 19, 1991
Integrated circuit structures having polycrystalline electrode contacts
MOTOROLA INC65 citations94
US4837176AJun 6, 1989
Integrated circuit structures having polycrystalline electrode contacts and process
MOTOROLA INC81 citations94
US5154946AOct 13, 1992
CMOS structure fabrication
MOTOROLA INC23 citations93
US5026663AJun 25, 1991
Method of fabricating a structure having self-aligned diffused junctions
MOTOROLA INC39 citations93
US5004703AApr 2, 1991
Multiple trench semiconductor structure method
MOTOROLA INC30 citations93
US4876217AOct 24, 1989
Method of forming semiconductor structure isolation regions
MOTOROLA INC42 citations93
US5510648AApr 23, 1996
Insulated gate semiconductor device and method of fabricating
MOTOROLA INC41 citations92
US5372960ADec 13, 1994
Method of fabricating an insulated gate semiconductor device
MOTOROLA INC45 citations92
US5108946AApr 28, 1992
Method of forming planar isolation regions
MOTOROLA INC35 citations92
US6033231AMar 7, 2000
Semiconductor device having a pedestal and method of forming
MOTOROLA INC19 citations91
US5965930AOct 12, 1999
High frequency bipolar transistor and method of forming the same
MOTOROLA INC21 citations87
US5070031ADec 3, 1991
Complementary semiconductor region fabrication
MOTOROLA INC7 citations74
US5028559AJul 2, 1991
Fabrication of devices having laterally isolated semiconductor regions
MOTOROLA INC13 citations74
US5026665AJun 25, 1991
Semiconductor device electrode method
MOTOROLA INC10 citations74
US4740478AApr 26, 1988
Integrated circuit method using double implant doping
MOTOROLA INC9 citations73
US5818098AOct 6, 1998
Semiconductor device having a pedestal
MOTOROLA INC14 citations72
US4772566ASep 20, 1988
Single tub transistor means and method
MOTOROLA INC14 citations72
US5920095AJul 6, 1999
Short channel field effect semiconductor device and method of making
MOTOROLA INC3 citations63
US5808362ASep 15, 1998
Interconnect structure and method of forming
MOTOROLA INC4 citations63
US4905070AFeb 27, 1990
Semiconductor device exhibiting no degradation of low current gain
MOTOROLA INC3 citations60
US5920102AJul 6, 1999
Semiconductor device having a decoupling capacitor and method of making
MOTOROLA INC1 citations52
SEMICONDUCTOR COMPONENTS IND
19 patentsUS7253477B2Aug 7, 2007
Semiconductor device edge termination structure
SEMICONDUCTOR COMPONENTS IND118 citations98
US7176524B2Feb 13, 2007
Semiconductor device having deep trench charge compensation regions and method
SEMICONDUCTOR COMPONENTS IND91 citations98
US7482220B2Jan 27, 2009
Semiconductor device having deep trench charge compensation regions and method
SEMICONDUCTOR COMPONENTS IND37 citations96
US7285823B2Oct 23, 2007
Superjunction semiconductor device structure
SEMICONDUCTOR COMPONENTS IND57 citations96
US7276747B2Oct 2, 2007
Semiconductor device having screening electrode and method
SEMICONDUCTOR COMPONENTS IND46 citations93
US7256119B2Aug 14, 2007
Semiconductor device having trench structures and method
SEMICONDUCTOR COMPONENTS IND38 citations93
US7902601B2Mar 8, 2011
Semiconductor device having deep trench charge compensation regions and method
SEMICONDUCTOR COMPONENTS IND13 citations92
US6953980B2Oct 11, 2005
Semiconductor filter circuit and method
SEMICONDUCTOR COMPONENTS IND37 citations92
US7098509B2Aug 29, 2006
High energy ESD structure and method
SEMICONDUCTOR COMPONENTS IND25 citations86
US8372716B2Feb 12, 2013
Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer
SEMICONDUCTOR COMPONENTS IND8 citations84
US7960781B2Jun 14, 2011
Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
SEMICONDUCTOR COMPONENTS IND14 citations84
US7446354B2Nov 4, 2008
Power semiconductor device having improved performance and method
SEMICONDUCTOR COMPONENTS IND11 citations84
US6809396B2Oct 26, 2004
Integrated circuit with a high speed narrow base width vertical PNP transistor
SEMICONDUCTOR COMPONENTS IND14 citations82
US6610143B2Aug 26, 2003
Method of manufacturing a semiconductor component
SEMICONDUCTOR COMPONENTS IND11 citations66
US7420258B2Sep 2, 2008
Semiconductor device having trench structures and method
SEMICONDUCTOR COMPONENTS IND5 citations63
USRE45365EFeb 10, 2015
Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate
SEMICONDUCTOR COMPONENTS IND2 citations62
US7638385B2Dec 29, 2009
Method of forming a semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND2 citations62
US7768078B2Aug 3, 2010
Power semiconductor device having improved performance and method
SEMICONDUCTOR COMPONENTS IND0 citations52
USRE44547EOct 22, 2013
Semiconductor device having deep trench charge compensation regions and method
SEMICONDUCTOR COMPONENTS IND0 citations48