P

Inventor

ZDEBEL PETER J

DE44 patents
⚠️ This page may combine multiple inventors who share the name “ZDEBEL PETER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOROLA INC

24 patents
US5712501AJan 27, 1998

Graded-channel semiconductor device

MOTOROLA INC187 citations98
US6118171ASep 12, 2000

Semiconductor device having a pedestal structure and method of making

MOTOROLA INC65 citations96
US5886374AMar 23, 1999

Optically sensitive device and method

MOTOROLA INC68 citations95
US5067002ANov 19, 1991

Integrated circuit structures having polycrystalline electrode contacts

MOTOROLA INC65 citations94
US4837176AJun 6, 1989

Integrated circuit structures having polycrystalline electrode contacts and process

MOTOROLA INC81 citations94
US5154946AOct 13, 1992

CMOS structure fabrication

MOTOROLA INC23 citations93
US5026663AJun 25, 1991

Method of fabricating a structure having self-aligned diffused junctions

MOTOROLA INC39 citations93
US5004703AApr 2, 1991

Multiple trench semiconductor structure method

MOTOROLA INC30 citations93
US4876217AOct 24, 1989

Method of forming semiconductor structure isolation regions

MOTOROLA INC42 citations93
US5510648AApr 23, 1996

Insulated gate semiconductor device and method of fabricating

MOTOROLA INC41 citations92
US5372960ADec 13, 1994

Method of fabricating an insulated gate semiconductor device

MOTOROLA INC45 citations92
US5108946AApr 28, 1992

Method of forming planar isolation regions

MOTOROLA INC35 citations92
US6033231AMar 7, 2000

Semiconductor device having a pedestal and method of forming

MOTOROLA INC19 citations91
US5965930AOct 12, 1999

High frequency bipolar transistor and method of forming the same

MOTOROLA INC21 citations87
US5070031ADec 3, 1991

Complementary semiconductor region fabrication

MOTOROLA INC7 citations74
US5028559AJul 2, 1991

Fabrication of devices having laterally isolated semiconductor regions

MOTOROLA INC13 citations74
US5026665AJun 25, 1991

Semiconductor device electrode method

MOTOROLA INC10 citations74
US4740478AApr 26, 1988

Integrated circuit method using double implant doping

MOTOROLA INC9 citations73
US5818098AOct 6, 1998

Semiconductor device having a pedestal

MOTOROLA INC14 citations72
US4772566ASep 20, 1988

Single tub transistor means and method

MOTOROLA INC14 citations72
US5920095AJul 6, 1999

Short channel field effect semiconductor device and method of making

MOTOROLA INC3 citations63
US5808362ASep 15, 1998

Interconnect structure and method of forming

MOTOROLA INC4 citations63
US4905070AFeb 27, 1990

Semiconductor device exhibiting no degradation of low current gain

MOTOROLA INC3 citations60
US5920102AJul 6, 1999

Semiconductor device having a decoupling capacitor and method of making

MOTOROLA INC1 citations52

SEMICONDUCTOR COMPONENTS IND

19 patents
US7253477B2Aug 7, 2007

Semiconductor device edge termination structure

SEMICONDUCTOR COMPONENTS IND118 citations98
US7176524B2Feb 13, 2007

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND91 citations98
US7482220B2Jan 27, 2009

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND37 citations96
US7285823B2Oct 23, 2007

Superjunction semiconductor device structure

SEMICONDUCTOR COMPONENTS IND57 citations96
US7276747B2Oct 2, 2007

Semiconductor device having screening electrode and method

SEMICONDUCTOR COMPONENTS IND46 citations93
US7256119B2Aug 14, 2007

Semiconductor device having trench structures and method

SEMICONDUCTOR COMPONENTS IND38 citations93
US7902601B2Mar 8, 2011

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND13 citations92
US6953980B2Oct 11, 2005

Semiconductor filter circuit and method

SEMICONDUCTOR COMPONENTS IND37 citations92
US7098509B2Aug 29, 2006

High energy ESD structure and method

SEMICONDUCTOR COMPONENTS IND25 citations86
US8372716B2Feb 12, 2013

Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer

SEMICONDUCTOR COMPONENTS IND8 citations84
US7960781B2Jun 14, 2011

Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method

SEMICONDUCTOR COMPONENTS IND14 citations84
US7446354B2Nov 4, 2008

Power semiconductor device having improved performance and method

SEMICONDUCTOR COMPONENTS IND11 citations84
US6809396B2Oct 26, 2004

Integrated circuit with a high speed narrow base width vertical PNP transistor

SEMICONDUCTOR COMPONENTS IND14 citations82
US6610143B2Aug 26, 2003

Method of manufacturing a semiconductor component

SEMICONDUCTOR COMPONENTS IND11 citations66
US7420258B2Sep 2, 2008

Semiconductor device having trench structures and method

SEMICONDUCTOR COMPONENTS IND5 citations63
USRE45365EFeb 10, 2015

Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate

SEMICONDUCTOR COMPONENTS IND2 citations62
US7638385B2Dec 29, 2009

Method of forming a semiconductor device and structure therefor

SEMICONDUCTOR COMPONENTS IND2 citations62
US7768078B2Aug 3, 2010

Power semiconductor device having improved performance and method

SEMICONDUCTOR COMPONENTS IND0 citations52
USRE44547EOct 22, 2013

Semiconductor device having deep trench charge compensation regions and method

SEMICONDUCTOR COMPONENTS IND0 citations48

LOECHELT GARY H

1 patent