Inventor

LIANG GUIRONG

US28 patents

⚠️ This page may combine multiple inventors who share the name “LIANG GUIRONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIANG GUIRONG

SANDISK TECHNOLOGIES LLC

State-dependent read compensation

Sub-block status dependent device operation

Neighbor word line compensation full sequence program scheme

Dynamic sense amplifier supply voltage for power and die size reduction

Utilizing data pattern effect to control read clock timing and bit line kick for read time reduction

Pre-read cycle timing shrink by SGD bias control and page and wordline control

Memory programming with selectively skipped verify pulses for performance improvement

Non-volatile memory with sub-block based self-boosting scheme

Peak current and program time optimization through loop dependent voltage ramp target and timing control

Programming techniques to reduce programming stress in a memory device

SANDISK TECHNOLOGIES INC

Systems and methods for sampling data at a non-volatile memory system

Ramping pass voltage to enhance channel boost in memory device

Partial block erase for data refreshing and open-block programming

Non-volatile storage with process that reduces read disturb on end wordlines

Internal data load for non-volatile storage

Nonvolatile storage reflow detection

Internal data load for non-volatile storage

Precharge scheme during programming of a memory device

Data storage device having reflow awareness

WESTERN DIGITAL TECH INC

Temperature compensation management in solid-state memory

Temperature compensation management in solid-state memory

Programming scheme for improved voltage distribution in solid-state memory

Sense time separation in foggy-fine program to improve optimal VT width

LEI BO

Erase and programming techniques to reduce the widening of state distributions in non-volatile memories

HEMINK GERRIT JAN

Ramping pass voltage to enhance channel boost in memory device, with optional temperature compensation

LI HAIBO

Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory

CHEN WENZHOU

Selected word line dependent programming voltage

ZHAO DENGTAO

Substrate bias during program of non-volatile storage