P

Inventor

LEE MING-HSIU

TW145 patents
⚠️ This page may combine multiple inventors who share the name “LEE MING-HSIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

32 patents
US7209390B2Apr 24, 2007

Operation scheme for spectrum shift in charge trapping non-volatile memory

MACRONIX INT CO LTD111 citations98
US7554873B2Jun 30, 2009

Three-dimensional memory devices and methods of manufacturing and operating the same

MACRONIX INT CO LTD44 citations96
US7266014B2Sep 4, 2007

Method of operating non-volatile memory device

MACRONIX INT CO LTD58 citations96
US8036014B2Oct 11, 2011

Phase change memory program method without over-reset

MACRONIX INT CO LTD27 citations93
US7777275B2Aug 17, 2010

Silicon-on-insulator structures

MACRONIX INT CO LTD23 citations93
US7656701B2Feb 2, 2010

Method for programming a multilevel phase change memory device

MACRONIX INT CO LTD16 citations93
US7272037B2Sep 18, 2007

Method for programming a multilevel phase change memory device

MACRONIX INT CO LTD20 citations93
US7135727B2Nov 14, 2006

I-shaped and L-shaped contact structures and their fabrication methods

MACRONIX INT CO LTD17 citations92
US10741244B1Aug 11, 2020

Memory and operating method thereof

MACRONIX INT CO LTD7 citations84
US9852791B1Dec 26, 2017

Semiconductor memory device, chip ID generation method thereof and manufacturing method thereof

MACRONIX INT CO LTD7 citations84
US8363463B2Jan 29, 2013

Phase change memory having one or more non-constant doping profiles

MACRONIX INT CO LTD16 citations84
US8350316B2Jan 8, 2013

Phase change memory cells having vertical channel access transistor and memory plane

MACRONIX INT CO LTD13 citations84
US7869270B2Jan 11, 2011

Set algorithm for phase change memory cell

MACRONIX INT CO LTD12 citations84
US7817472B2Oct 19, 2010

Operating method of memory device

MACRONIX INT CO LTD9 citations84
US7324377B2Jan 29, 2008

Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells

MACRONIX INT CO LTD15 citations84
US7088613B2Aug 8, 2006

Method for controlling current during read and program operations of programmable diode

MACRONIX INT CO LTD16 citations84
US7038928B1May 2, 2006

Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods

MACRONIX INT CO LTD13 citations84
US6890819B2May 10, 2005

Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof

MACRONIX INT CO LTD16 citations84
US11871588B2Jan 9, 2024

Memory device and method for manufacturing the same

MACRONIX INT CO LTD3 citations75
US7371604B2May 13, 2008

Method of forming a contact structure

MACRONIX INT CO LTD6 citations74
US7262427B2Aug 28, 2007

Structure for phase change memory and the method of forming same

MACRONIX INT CO LTD7 citations74
US7085168B2Aug 1, 2006

Programming method for controlling memory threshold voltage distribution

MACRONIX INT CO LTD10 citations74
US6952038B2Oct 4, 2005

3D polysilicon ROM and method of fabrication thereof

MACRONIX INT CO LTD7 citations74
US11664070B2May 30, 2023

In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders

MACRONIX INT CO LTD3 citations73
US11587623B2Feb 21, 2023

Content-addressable memory and operation method thereof

MACRONIX INT CO LTD2 citations73
US10818729B2Oct 27, 2020

Bit cost scalable 3D phase change cross-point memory

MACRONIX INT CO LTD2 citations73
US9747980B2Aug 29, 2017

Semiconductor memory device and method for temperature compensation using temperature-resistance-voltage functions

MACRONIX INT CO LTD2 citations73
US9501042B1Nov 22, 2016

Timing device and method thereof

MACRONIX INT CO LTD3 citations73
US9373382B1Jun 21, 2016

Method for healing phase-change memory device and applications thereof

MACRONIX INT CO LTD4 citations73
US8962466B2Feb 24, 2015

Low temperature transition metal oxide for memory device

MACRONIX INT CO LTD6 citations73
US8374019B2Feb 12, 2013

Phase change memory with fast write characteristics

MACRONIX INT CO LTD6 citations73
US11587617B2Feb 21, 2023

Ternary content addressable memory and decision generation method for the same

MACRONIX INT CO LTD3 citations72

LUNG HSIANG-LAN

6 patents

LEE MING-HSIU

3 patents

QIMONDA NORTH AMERICA CORP

2 patents

(unassigned)

1 patent

CHIEN WEI-CHIH

1 patent

SHIH YEN-HAO

1 patent

IBM

1 patent

MICRONIX INTERNAT CO LTD

1 patent

DU PEI-YING

1 patent

VXIS TECHNOLOGY CORP

1 patent

Showing the top 50 of 145 patents by PatentIndex Score.