Inventor
LEE MING-HSIU
TW145 patents
⚠️ This page may combine multiple inventors who share the name “LEE MING-HSIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
32 patentsUS7209390B2Apr 24, 2007
Operation scheme for spectrum shift in charge trapping non-volatile memory
MACRONIX INT CO LTD111 citations98
US7554873B2Jun 30, 2009
Three-dimensional memory devices and methods of manufacturing and operating the same
MACRONIX INT CO LTD44 citations96
US7266014B2Sep 4, 2007
Method of operating non-volatile memory device
MACRONIX INT CO LTD58 citations96
US8036014B2Oct 11, 2011
Phase change memory program method without over-reset
MACRONIX INT CO LTD27 citations93
US7777275B2Aug 17, 2010
Silicon-on-insulator structures
MACRONIX INT CO LTD23 citations93
US7656701B2Feb 2, 2010
Method for programming a multilevel phase change memory device
MACRONIX INT CO LTD16 citations93
US7272037B2Sep 18, 2007
Method for programming a multilevel phase change memory device
MACRONIX INT CO LTD20 citations93
US7135727B2Nov 14, 2006
I-shaped and L-shaped contact structures and their fabrication methods
MACRONIX INT CO LTD17 citations92
US10741244B1Aug 11, 2020
Memory and operating method thereof
MACRONIX INT CO LTD7 citations84
US9852791B1Dec 26, 2017
Semiconductor memory device, chip ID generation method thereof and manufacturing method thereof
MACRONIX INT CO LTD7 citations84
US8363463B2Jan 29, 2013
Phase change memory having one or more non-constant doping profiles
MACRONIX INT CO LTD16 citations84
US8350316B2Jan 8, 2013
Phase change memory cells having vertical channel access transistor and memory plane
MACRONIX INT CO LTD13 citations84
US7869270B2Jan 11, 2011
Set algorithm for phase change memory cell
MACRONIX INT CO LTD12 citations84
US7817472B2Oct 19, 2010
Operating method of memory device
MACRONIX INT CO LTD9 citations84
US7324377B2Jan 29, 2008
Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells
MACRONIX INT CO LTD15 citations84
US7088613B2Aug 8, 2006
Method for controlling current during read and program operations of programmable diode
MACRONIX INT CO LTD16 citations84
US7038928B1May 2, 2006
Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods
MACRONIX INT CO LTD13 citations84
US6890819B2May 10, 2005
Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof
MACRONIX INT CO LTD16 citations84
US11871588B2Jan 9, 2024
Memory device and method for manufacturing the same
MACRONIX INT CO LTD3 citations75
US7371604B2May 13, 2008
Method of forming a contact structure
MACRONIX INT CO LTD6 citations74
US7262427B2Aug 28, 2007
Structure for phase change memory and the method of forming same
MACRONIX INT CO LTD7 citations74
US7085168B2Aug 1, 2006
Programming method for controlling memory threshold voltage distribution
MACRONIX INT CO LTD10 citations74
US6952038B2Oct 4, 2005
3D polysilicon ROM and method of fabrication thereof
MACRONIX INT CO LTD7 citations74
US11664070B2May 30, 2023
In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders
MACRONIX INT CO LTD3 citations73
US11587623B2Feb 21, 2023
Content-addressable memory and operation method thereof
MACRONIX INT CO LTD2 citations73
US10818729B2Oct 27, 2020
Bit cost scalable 3D phase change cross-point memory
MACRONIX INT CO LTD2 citations73
US9747980B2Aug 29, 2017
Semiconductor memory device and method for temperature compensation using temperature-resistance-voltage functions
MACRONIX INT CO LTD2 citations73
US9501042B1Nov 22, 2016
Timing device and method thereof
MACRONIX INT CO LTD3 citations73
US9373382B1Jun 21, 2016
Method for healing phase-change memory device and applications thereof
MACRONIX INT CO LTD4 citations73
US8962466B2Feb 24, 2015
Low temperature transition metal oxide for memory device
MACRONIX INT CO LTD6 citations73
US8374019B2Feb 12, 2013
Phase change memory with fast write characteristics
MACRONIX INT CO LTD6 citations73
US11587617B2Feb 21, 2023
Ternary content addressable memory and decision generation method for the same
MACRONIX INT CO LTD3 citations72
LUNG HSIANG-LAN
6 patentsUS8426294B2Apr 23, 2013
3D memory array arranged for FN tunneling program and erase
LUNG HSIANG-LAN165 citations99
US8203187B2Jun 19, 2012
3D memory array arranged for FN tunneling program and erase
LUNG HSIANG-LAN309 citations99
US8437192B2May 7, 2013
3D two bit-per-cell NAND flash memory
LUNG HSIANG-LAN61 citations98
US8634235B2Jan 21, 2014
Phase change memory coding
LUNG HSIANG-LAN13 citations84
US8324605B2Dec 4, 2012
Dielectric mesh isolated phase change structure for phase change memory
LUNG HSIANG-LAN16 citations82
US9019771B2Apr 28, 2015
Dielectric charge trapping memory cells with redundancy
LUNG HSIANG-LAN6 citations73
LEE MING-HSIU
3 patentsUS8809829B2Aug 19, 2014
Phase change memory having stabilized microstructure and manufacturing method
LEE MING-HSIU8 citations84
US8198619B2Jun 12, 2012
Phase change memory cell structure
LEE MING-HSIU8 citations84
US8077506B2Dec 13, 2011
Method for programming a multilevel phase change memory device
LEE MING-HSIU9 citations84
QIMONDA NORTH AMERICA CORP
2 patents(unassigned)
1 patentCHIEN WEI-CHIH
1 patentSHIH YEN-HAO
1 patentIBM
1 patentMICRONIX INTERNAT CO LTD
1 patentDU PEI-YING
1 patentVXIS TECHNOLOGY CORP
1 patentShowing the top 50 of 145 patents by PatentIndex Score.