Inventor · disambiguated record
Uwe Stoeckgen
Also filed as: STOECKGEN UWE · STOECKGEN UWE GUNTER
8 granted patents·5 pending applications·92 citations·filing 2000–2013
86Inventor score
Top patents by PatentIndex Score
13 records- 0189US7980922B2Method and system for controlling chemical mechanical polishing by controllably moving a slurry outletADVANCED MICRO DEVICES INC·Filed 2007·Granted Jul 19, 2011·25 cites·22 claims
- 0288US6699107B2Polishing head and apparatus with an improved pad conditioner for chemical mechanical polishingADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 2, 2004·35 cites·34 claims
- 0382US8622783B2Method and system for controlling chemical mechanical polishing by controllably moving a slurry outletKIESEL AXEL·Filed 2011·Granted Jan 7, 2014·7 cites·17 claims
- 0468US7150675B2Method and system for controlling the chemical mechanical polishing by using a sensor signal of a pad conditionerADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 19, 2006·15 cites·13 claims
- 0561US8450197B2Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forcesPREUSSE AXEL·Filed 2010·Granted May 28, 2013·2 cites·11 claims
- 0659US6752697B1Apparatus and method for chemical mechanical polishing of a substrateADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 22, 2004·8 cites·40 claims
- 0752US8951900B2Contact elements of a semiconductor device formed by electroless plating and excess material removal with reduced sheer forcesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 10, 2015·0 cites·21 claims
- 0844US7476552B2Method of reworking a semiconductor structureADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 13, 2009·0 cites·18 claims
- 0941US2008242195A1Cmp system having an eddy current sensor of reduced heightHEINRICH JENS·Filed 2007·Application pending·0 cites
- 1041US2008242196A1Method and system for controlling chemical mechanical polishing by taking zone specific substrate data into accountMARXSEN GERD·Filed 2007·Application pending·0 cites
- 1136US2004063318A1Method of selectively removing metal residues from a dielectric layer by chemical mechanical polishingFiled 2003·Application pending·0 cites
- 1236US2004043611A1Method of reducing a defect level after chemically mechanically polishing a copper-containing substrate by rinsing the substrate with an oxidizing solutionFiled 2003·Application pending·0 cites
- 1332US2014024213A1Processes for forming integrated circuits with post-patterning treamentHINTZE BERND·Filed 2012·Application pending·0 cites
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