Inventor · disambiguated record
Hyang-Ja Yang
Also filed as: YANG HYANG-JA
31 granted patents·3 pending applications·428 citations·filing 1996–2017
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD25YANG HYANG-JA4LEE JAE YOUNG2KIM CHANG-BUM1SAMSUNG ELECTRONICS LTD1
Top patents by PatentIndex Score
34 records- 0195US7564134B2Circuit wiring layout in semiconductor memory device and layout methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 21, 2009·117 cites·20 claims
- 0294US6958947B2Semiconductor memory device with internal voltage generators for testing a memory array and peripheral circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 25, 2005·92 cites·20 claims
- 0390US7525173B2Layout structure of MOS transistors on an active regionSAMSUNG ELECTRONICS LTD·Filed 2006·Granted Apr 28, 2009·16 cites·4 claims
- 0486US7639556B2Bit line sense amplifier of semiconductor memory device having open bit line structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·15 cites·6 claims
- 0582US6822330B2Semiconductor integrated circuit device with test element group circuitSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 23, 2004·24 cites·15 claims
- 0679US10170495B2Stacked memory device, optical proximity correction (OPC) verifying method, method of designing layout of stacked memory device, and method of manufacturing stacked memory deviceKIM CHANG BUM·Filed 2017·Granted Jan 1, 2019·5 cites·18 claims
- 0775US8614908B2Bit line sense amplifier layout array, layout method, and apparatus having the sameLEE JAE YOUNG·Filed 2011·Granted Dec 24, 2013·5 cites·6 claims
- 0873US7999297B2Semiconductor device having stacked decoupling capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 16, 2011·6 cites·5 claims
- 0972US7924604B2Stacked memory cell for use in high-density CMOS SRAMSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 12, 2011·8 cites·5 claims
- 1072US7245158B2Circuit wiring layout in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·8 cites·30 claims
- 1169US6018168ASemiconductor memory devices having alternating word line reverse diodes and well bias tapping regionsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 25, 2000·25 cites·8 claims
- 1267US8279703B2Sub-word line driver circuit and semiconductor memory device having the sameYANG HYANG-JA·Filed 2010·Granted Oct 2, 2012·4 cites·13 claims
- 1367US7751273B2Layout structure of sub-world line driver and forming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·3 cites·20 claims
- 1465US5760446AElectrostatic discharge structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 2, 1998·24 cites·4 claims
- 1562US7068058B2Semiconductor integrated circuit device with test element group circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 27, 2006·7 cites·2 claims
- 1661US7057963B2Dual port SRAM memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·11 cites·24 claims
- 1759US8547766B2Area-efficient data line layouts to suppress the degradation of electrical characteristicsWON JONG-HAK·Filed 2010·Granted Oct 1, 2013·2 cites·16 claims
- 1856US7405956B2Line layout structure of semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 29, 2008·5 cites·19 claims
- 1955US8050125B2Bit line sense amplifier of semiconductor memory device having open bit line structureSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Nov 1, 2011·1 cites·9 claims
- 2055US6166440AInterconnection for preventing signal interference in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 26, 2000·19 cites·9 claims
- 2154US7436078B2Line layout structure of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·5 cites·19 claims
- 2250US5962899AElectrostatic discharge protection circuitSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 5, 1999·14 cites·12 claims
- 2349US7808852B2Semiconductor memory device and layout method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·2 cites·24 claims
- 2448US10140415B2Method and system for verifying layout of integrated circuit including vertical memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 2548US7889532B2Bit line sense amplifier of semiconductor memory device having open bit line structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 15, 2011·1 cites·5 claims
- 2647US2012174359A1Semiconductor device having function of improved electrostatic discharge protectionYANG HYANG-JA·Filed 2012·Application pending·0 cites
- 2745US2009262564A1Circuit wiring layout in semiconductor memory device and layout methodYANG HYANG-JA·Filed 2009·Application pending·0 cites
- 2841US8143672B2Semiconductor device including a metal layer having a first pattern and a second pattern which together form a web structure, thereby providing improved electrostatic discharge protectionYANG HYANG-JA·Filed 2006·Granted Mar 27, 2012·0 cites·27 claims
- 2940US6700168B2Layout structure and method of a column path of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 2, 2004·2 cites·18 claims
- 3037US7151710B2Semiconductor memory device with data input/output organization in multiples of nine bitsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 19, 2006·0 cites·21 claims
- 3137US6949960B2Semiconductor integrated circuit comprising functional modesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 27, 2005·0 cites·14 claims
- 3236US6909661B2Semiconductor memory device with data input/output organization in multiples of nine bitsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 21, 2005·1 cites·36 claims
- 3336US6359313B1Electrostatic discharge protection transistor for a semiconductor chipSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 19, 2002·6 cites·12 claims
- 3435US2012043616A1Sub word line driver and apparatuses having the sameLEE JAE YOUNG·Filed 2011·Application pending·0 cites
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