Inventor · disambiguated record
Steven Kosier
Also filed as: KOSIER STEVEN · KOSIER STEVEN L
15 granted patents·6 pending applications·101 citations·filing 2002–2025
91Inventor score
Files withPOLAR SEMICONDUCTOR LLC8ALLEGRO MICROSYSTEMS LLC5POLAR SEMICONDUCTOR INC4ERIE DAVID1LITFIN DAVID1
Top patents by PatentIndex Score
21 records- 0196US9851417B2Structure and system for simultaneous sensing a magnetic field and mechanical stressALLEGRO MICROSYSTEMS LLC·Filed 2015·Granted Dec 26, 2017·11 cites·17 claims
- 0294US9312473B2Vertical hall effect sensorALLEGRO MICROSYSTEMS LLC·Filed 2013·Granted Apr 12, 2016·16 cites·9 claims
- 0384US10746817B2Structure and system for simultaneous sensing a magnetic field and mechanical stressALLEGRO MICROSYSTEMS LLC·Filed 2017·Granted Aug 18, 2020·2 cites·22 claims
- 0484US7071533B1Bipolar junction transistor antifusePOLAR SEMICONDUCTOR INC·Filed 2005·Granted Jul 4, 2006·17 cites·19 claims
- 0583US9899343B2High voltage tolerant bonding pad structure for trench-based semiconductor devicesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Feb 20, 2018·5 cites·21 claims
- 0680US9013838B1Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating sameALLEGRO MICROSYSTEMS LLC·Filed 2013·Granted Apr 21, 2015·7 cites·20 claims
- 0777US10580861B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2018·Granted Mar 3, 2020·2 cites·9 claims
- 0876US6804809B1System and method for defining a semiconductor device layoutPOLARFAB LLC·Filed 2002·Granted Oct 12, 2004·33 cites·23 claims
- 0973US9818828B2Termination trench structures for high-voltage split-gate MOS devicesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Nov 14, 2017·2 cites·26 claims
- 1066US9735345B2Vertical hall effect sensorALLEGRO MICROSYSTEMS LLC·Filed 2016·Granted Aug 15, 2017·1 cites·13 claims
- 1165US10153366B2LDMOS transistor with lightly-doped annular RESURF peripheryPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Dec 11, 2018·2 cites·18 claims
- 1261US11245006B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2019·Granted Feb 8, 2022·0 cites·20 claims
- 1360US10141440B2Drift-region field control of an LDMOS transistor using biased shallow-trench field platesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Nov 27, 2018·1 cites·21 claims
- 1452US7466004B2Diode structure to suppress parasitic currentPOLAR SEMICONDUCTOR INC·Filed 2006·Granted Dec 16, 2008·1 cites·19 claims
- 1551US8736003B2Integrated hybrid hall effect transducerERIE DAVID·Filed 2009·Granted May 27, 2014·1 cites·15 claims
- 1651US2025351472A1System and method for determining single event breakdown voltage for wide bandgap semiconductor power deviceUNIV VANDERBILT·Filed 2025·Application pending·0 cites
- 1748US2016247879A1Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2016·Application pending·0 cites
- 1839US2006270165A1Multi-layered spacer for lightly-doped drain MOSFETSPOLAR SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1936US2006267146A1Multilayered emitter window for bipolar junction transistorPOLAR SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 2034US2017194485A1Split-gate superjunction power transistorPOLAR SEMICONDUCTOR LLC·Filed 2016·Application pending·0 cites
- 2134US2007080403A1Low trigger voltage electrostatic discharge protection deviceLITFIN DAVID·Filed 2005·Application pending·0 cites
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