P

Inventor

WU WEI CHUANG

TW43 patents
⚠️ This page may combine multiple inventors who share the name “WU WEI CHUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

41 patents
US10943940B2Mar 9, 2021

Image sensor comprising reflective guide layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10622394B2Apr 14, 2020

Image sensing device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10461109B2Oct 29, 2019

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10269857B2Apr 23, 2019

Image sensor comprising reflective guide layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11791357B2Oct 17, 2023

Composite BSI structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US11984465B2May 14, 2024

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11430823B2Aug 30, 2022

Method for manufacturing semiconductor image sensor device having deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404460B2Aug 2, 2022

Vertical gate field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11211419B2Dec 28, 2021

Composite bsi structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11031434B2Jun 8, 2021

Self aligned grids in BSI image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10861894B2Dec 8, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10825853B2Nov 3, 2020

Semiconductor image sensor device with deep trench isolations and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10797091B2Oct 6, 2020

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10727265B2Jul 28, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9536810B1Jan 3, 2017

Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11437420B2Sep 6, 2022

Image sensor with overlap of backside trench isolation structure and vertical transfer gate

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9812483B2Nov 7, 2017

Back-side illuminated (BSI) image sensor with global shutter scheme

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US12154927B2Nov 26, 2024

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040336B2Jul 16, 2024

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11538837B2Dec 27, 2022

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11004880B2May 11, 2021

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10777590B2Sep 15, 2020

Method for forming image sensor device structure with doping layer in light-sensing region

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9698190B2Jul 4, 2017

Image sensor comprising reflective guide layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12464839B2Nov 4, 2025

Vertical gate field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317613B2May 27, 2025

Self aligned grids in BSI image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12255219B2Mar 18, 2025

Image sensor with overlap of backside trench isolation structure and vertical transfer gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148782B2Nov 19, 2024

Composite BSI structure and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948949B2Apr 2, 2024

Vertical gate field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862535B2Jan 2, 2024

Through-substrate-via with reentrant profile

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11791361B2Oct 17, 2023

Image sensor with overlap of backside trench isolation structure and vertical transfer gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776985B2Oct 3, 2023

Method of forming self aligned grids in BSI image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495630B2Nov 8, 2022

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342373B2May 24, 2022

Manufacturing method of image sensing device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191282B2Jan 7, 2025

Shared pad/bridge layout for a 3D IC

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10475828B2Nov 12, 2019

Image sensor device structure with doping layer in light-sensing region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10304889B2May 28, 2019

Image sensor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269858B2Apr 23, 2019

Image sensor with reduced optical path

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164156B2Dec 25, 2018

Structure and formation method of image sensor structure with grid structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9917130B2Mar 13, 2018

Image sensor with reduced optical path

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9425228B2Aug 23, 2016

Image sensor with reduced optical path

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10147752B2Dec 4, 2018

Back-side illuminated (BSI) image sensor with global shutter scheme

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

1 patent

HSIAO RU-SHANG

1 patent