Inventor
SU KUAN-CHENG
TW59 patents
⚠️ This page may combine multiple inventors who share the name “SU KUAN-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
47 patentsUS9368484B1Jun 14, 2016
Fin type electrostatic discharge protection device
UNITED MICROELECTRONICS CORP28 citations94
US5691234ANov 25, 1997
Buried contact method to release plasma-induced charging damage on device
UNITED MICROELECTRONICS CORP23 citations92
US5585297ADec 17, 1996
Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby
UNITED MICROELECTRONICS CORP23 citations92
US5576573ANov 19, 1996
Stacked CVD oxide architecture multi-state memory cell for mask read-only memories
UNITED MICROELECTRONICS CORP36 citations92
US5545580AAug 13, 1996
Multi-state read-only memory using multiple polysilicon selective depositions
UNITED MICROELECTRONICS CORP20 citations92
US5504030AApr 2, 1996
Process for fabricating high-density mask ROM devices
UNITED MICROELECTRONICS CORP21 citations92
US5382534AJan 17, 1995
Field effect transistor with recessed buried source and drain regions
UNITED MICROELECTRONICS CORP28 citations92
US9691752B1Jun 27, 2017
Semiconductor device for electrostatic discharge protection and method of forming the same
UNITED MICROELECTRONICS CORP11 citations84
US9653450B2May 16, 2017
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP8 citations83
US9331161B1May 3, 2016
Metal gate structure and method of forming the same
UNITED MICROELECTRONICS CORP6 citations80
US6171899B1Jan 9, 2001
Method for fabricating a capacitor
UNITED MICROELECTRONICS CORP11 citations74
US6093626AJul 25, 2000
Buried contact method to release plasma-included charging damage on device
UNITED MICROELECTRONICS CORP14 citations74
US5668030ASep 16, 1997
Process for making identification alphanumeric code markings for mask ROM devices
UNITED MICROELECTRONICS CORP8 citations74
US5597753AJan 28, 1997
CVD oxide coding method for ultra-high density mask read-only-memory (ROM)
UNITED MICROELECTRONICS CORP17 citations74
US5536669AJul 16, 1996
Method for fabricating read-only-memory devices with self-aligned code implants
UNITED MICROELECTRONICS CORP12 citations74
US10629585B2Apr 21, 2020
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP3 citations73
US10008489B2Jun 26, 2018
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP4 citations73
US10204897B2Feb 12, 2019
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP2 citations72
US10103136B2Oct 16, 2018
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP2 citations72
US9673189B2Jun 6, 2017
ESD unit
UNITED MICROELECTRONICS CORP4 citations72
US9640524B2May 2, 2017
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP3 citations72
US9564436B2Feb 7, 2017
Semiconductor device
UNITED MICROELECTRONICS CORP5 citations72
US6383883B1May 7, 2002
Method of reducing junction capacitance of source/drain region
UNITED MICROELECTRONICS CORP12 citations72
US5918127AJun 29, 1999
Method of enhancing electrostatic discharge (ESD) protection capability in integrated circuits
UNITED MICROELECTRONICS CORP15 citations72
US5665995ASep 9, 1997
Post passivation programmed mask ROM
UNITED MICROELECTRONICS CORP13 citations72
US5429974AJul 4, 1995
Post passivation mask ROM programming method
UNITED MICROELECTRONICS CORP15 citations72
US5705840AJan 6, 1998
Field effect transistor with recessed buried source and drain regions
UNITED MICROELECTRONICS CORP15 citations69
US6500389B1Dec 31, 2002
Plasma arcing sensor
UNITED MICROELECTRONICS CORP2 citations63
US5693551ADec 2, 1997
Method for fabricating a tri-state read-only memory device
UNITED MICROELECTRONICS CORP4 citations63
US9093565B2Jul 28, 2015
Fin diode structure
UNITED MICROELECTRONICS CORP3 citations62
US11189611B2Nov 30, 2021
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP0 citations61
US7759957B2Jul 20, 2010
Method for fabricating a test structure
UNITED MICROELECTRONICS CORP2 citations60
US7649377B2Jan 19, 2010
Test structure
UNITED MICROELECTRONICS CORP4 citations60
US9343567B2May 17, 2016
Semiconductor device
UNITED MICROELECTRONICS CORP2 citations59
US11004840B2May 11, 2021
Electrostatic discharge protection structure
UNITED MICROELECTRONICS CORP0 citations57
US7589551B1Sep 15, 2009
On-wafer AC stress test circuit
UNITED MICROELECTRONICS CORP4 citations56
US9748222B2Aug 29, 2017
Fin type electrostatic discharge protection device
UNITED MICROELECTRONICS CORP0 citations52
US9559091B2Jan 31, 2017
Method of manufacturing fin diode structure
UNITED MICROELECTRONICS CORP0 citations52
US9455246B2Sep 27, 2016
Fin diode structure
UNITED MICROELECTRONICS CORP0 citations52
US9368500B2Jun 14, 2016
Complementary metal-oxide-semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US9331064B2May 3, 2016
Fin diode structure
UNITED MICROELECTRONICS CORP0 citations52
US8711535B2Apr 29, 2014
ESD protection circuit and ESD protection device thereof
UNITED MICROELECTRONICS CORP0 citations52
US5859460AJan 12, 1999
Tri-state read-only memory device and method for fabricating the same
UNITED MICROELECTRONICS CORP1 citations52
US5756376AMay 26, 1998
Method for removing a diffusion barrier layer on pad regions
UNITED MICROELECTRONICS CORP1 citations52
US10672759B2Jun 2, 2020
Electrostatic discharge protection semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US9607977B1Mar 28, 2017
Electrostatic discharge protection device and method for producing an electrostatic discharge protection device
UNITED MICROELECTRONICS CORP1 citations51
US12408408B2Sep 2, 2025
Electrostatic discharge protection device including source silicide pattern and drain silicide pattern
UNITED MICROELECTRONICS CORP0 citations50
WANG CHANG-TZU
2 patentsWEN YUNG-JU
1 patentShowing the top 50 of 59 patents by PatentIndex Score.