Inventor · disambiguated record
Jerry Hu
Also filed as: HU JERRY · HU JERRY C · HU JERRY CHE-JEN
8 granted patents·5 pending applications·75 citations·filing 1999–2017
85Inventor score
Top patents by PatentIndex Score
13 records- 0183US6563175B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2001·Granted May 13, 2003·30 cites·15 claims
- 0282US8501580B2Process of fabricating semiconductor device with low capacitance for high-frequency circuit protectionHU JERRY·Filed 2011·Granted Aug 6, 2013·11 cites·18 claims
- 0365US6835623B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 28, 2004·10 cites·9 claims
- 0465US6352900B1Controlled oxide growth over polysilicon gates for improved transistor characteristicsTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 5, 2002·12 cites·13 claims
- 0564US6420236B1Hydrogen treatment for threshold voltage shift of metal gate MOSFET devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 16, 2002·12 cites·23 claims
- 0652US9905562B2Semiconductor integrated circuit layout structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 27, 2018·0 cites·6 claims
- 0752US2009152639A1Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments for Transistor ImprovementTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 0849US9673145B2Semiconductor integrated circuit layout structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 6, 2017·0 cites·14 claims
- 0941US2009032826A1Multi-chip light emitting diode packageLUSTROUS TECHNOLOGY LTD·Filed 2008·Application pending·0 cites
- 1039US2003157773A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2003·Application pending·0 cites
- 1138US9653346B2Integrated FinFET structure having a contact plug pitch larger than fin and first metal pitchUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 16, 2017·0 cites·13 claims
- 1237US2003080389A1Semiconductor device having a dielectric layer with a uniform nitrogen profileFiled 2001·Application pending·0 cites
- 1329US2001038131A1Using an elevated silicide as diffusion source for deep sub-micron and beyond cmosFiled 1999·Application pending·0 cites
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