Inventor · disambiguated record
Bartlomiej Jan Pawlak
Also filed as: PAWLAK BARTLOMIEJ · PAWLAK BARTLOMIEJ J · PAWLAK BARTLOMIEJ JAN
53 granted patents·8 pending applications·406 citations·filing 2004–2023
98Inventor score
Top patents by PatentIndex Score
61 records- 0198US10340290B2Stacked SOI semiconductor devices with back bias mechanismGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 2, 2019·32 cites·20 claims
- 0298US9824933B1Stacked vertical-transport field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 21, 2017·31 cites·20 claims
- 0398US8716156B1Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation processGLOBALFOUNDRIES INC·Filed 2013·Granted May 6, 2014·60 cites·39 claims
- 0497US11145349B1Physically unclonable function architecture including memory cells with parallel-connected access transistors and common write wordlinesGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 12, 2021·10 cites·20 claims
- 0597US10304833B1Method of forming complementary nano-sheet/wire transistor devices with same depth contactsGLOBALFOUNDRIES INC·Filed 2018·Granted May 28, 2019·19 cites·20 claims
- 0697US10134901B1Methods of forming a bulk field effect transistor (FET) with sub-source/drain isolation layers and the resulting structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 20, 2018·18 cites·18 claims
- 0794US8357569B2Method of fabricating finfet deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·25 cites·20 claims
- 0893US10236379B2Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth processGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·10 cites·20 claims
- 0991US8187959B2Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing samePAWLAK BARTLOMIEJ JAN·Filed 2004·Granted May 29, 2012·94 cites·7 claims
- 1089US10453750B2Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapesGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 22, 2019·5 cites·18 claims
- 1189US9558943B1Stress relaxed buffer layer on textured silicon surfaceGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 31, 2017·6 cites·12 claims
- 1288US9601379B1Methods of forming metal source/drain contact structures for semiconductor devices with gate all around channel structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·22 cites·16 claims
- 1386US10580897B2Methods of forming a bulk field effect transistor (FET) with sub-source/drain isolation layers and the resulting structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·3 cites·15 claims
- 1485US7582547B2Method for junction formation in a semiconductor device and the semiconductor device made thereofIMEC INTER UNI MICRO ELECTR·Filed 2007·Granted Sep 1, 2009·10 cites·25 claims
- 1584US9704962B1Horizontal gate all around nanowire transistor bottom isolationGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 11, 2017·4 cites·13 claims
- 1683US8900891B2Fabrication method for interdigitated back contact photovoltaic cellsPAWLAK BARTLOMIEJ JAN·Filed 2011·Granted Dec 2, 2014·9 cites·21 claims
- 1782US7122452B2Method of manufacturing a semiconductor on a silicon on insulator (SOI) substrate using solid epitaxial regrowth (SPER) and semiconductor device made therebyKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Granted Oct 17, 2006·8 cites·10 claims
- 1881US9978836B1Nanostructure field-effect transistors with enhanced mobility source/drain regionsGLOBALFOUNDRIES INC·Filed 2016·Granted May 22, 2018·3 cites·20 claims
- 1981US9653593B2Method of fabricating FinFET device and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 16, 2017·4 cites·20 claims
- 2080US9741847B2Methods of forming a contact structure for a vertical channel semiconductor device and the resulting deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 22, 2017·3 cites·23 claims
- 2179US9698262B2Vertical fin field-effect semiconductor deviceIMEC VZW·Filed 2016·Granted Jul 4, 2017·3 cites·18 claims
- 2279US9368578B2Methods of forming substrates comprised of different semiconductor materials and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 14, 2016·5 cites·19 claims
- 2379US9166025B1Methods of forming a nanowire device with a gate-all-around-channel configuration and the resulting nanowire deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 20, 2015·5 cites·27 claims
- 2476US7785993B2Method of growing a strained layerNXP BV·Filed 2005·Granted Aug 31, 2010·5 cites·16 claims
- 2575US11069830B1Quantum-confined stark effect (QCSE) modulator and photonics structure incorporating the QCSE modulatorGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 20, 2021·1 cites·20 claims
- 2675US10770440B2Micro-LED display assemblyGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 8, 2020·2 cites·20 claims
- 2773US10020395B2Semiconductor device with gate inside U-shaped channel and methods of making such a deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 10, 2018·2 cites·26 claims
- 2872US7615430B2Field effect transistor and method of manufacturing a field effect transistorNXP BV·Filed 2005·Granted Nov 10, 2009·4 cites·20 claims
- 2969US12491511B2Microfluidic channel structure and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 3066US12265255B2Electro-absorption modulators with stacked waveguide tapersGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3166US2025031401A1Nanosheet structures with corner spacerGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3265US7491616B2Method of manufacturing a semiconductor device including dopant introductionNXP BV·Filed 2005·Granted Feb 17, 2009·2 cites·20 claims
- 3364US11768153B1Optical ring resonator-based microfluidic sensorGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 3464US9711644B2Methods of making source/drain regions positioned inside U-shaped semiconductor material using source/drain placeholder structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 18, 2017·1 cites·36 claims
- 3563US12339494B2Edge couplers with a fine-alignment mechanismGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 3661US12001056B2Light coupling between stacked photonics chipsGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 3761US10658388B2Methods of forming stacked SOI semiconductor devices with back bias mechanismGLOBALFOUNDRIES INC·Filed 2019·Granted May 19, 2020·0 cites·19 claims
- 3857US11774689B2Photonics chips and semiconductor products having angled optical fibersGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 3, 2023·0 cites·17 claims
- 3956US2023105338A1Contact-free biosensorGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
- 4055US11474383B2Optical power modulators based on total internal reflectionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 4155US9793384B2Tunneling field effect transistor and methods of making such a transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 17, 2017·0 cites·28 claims
- 4253US2024125732A1Ion-sensitive field effect transistor above microfluidic cavity for ion detection and identificationGLOBALFOUNDRIES US INC·Filed 2022·Application pending·0 cites
- 4352US10340369B2Tunneling field effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 2, 2019·0 cites·20 claims
- 4450US9263555B2Methods of forming a channel region for a semiconductor device by performing a triple cladding processGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·0 cites·21 claims
- 4549US11387350B2Semiconductor fin structure and method of fabricating the sameIMEC VZW·Filed 2019·Granted Jul 12, 2022·0 cites·15 claims
- 4649US10056453B2Semiconductor wafers with reduced bow and warpageGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·0 cites·17 claims
- 4749US2008105922A1Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtainable with Such a MethodIMEC INTER UNI MICRO ELECTR·Filed 2007·Application pending·0 cites
- 4848US9419154B2Interdigitated electrode formationIMEC·Filed 2014·Granted Aug 16, 2016·0 cites·15 claims
- 4947US10090227B1Back biasing in SOI FET technologyGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 2, 2018·0 cites·20 claims
- 5047US9076842B2Fin pitch scaling and active layer isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 7, 2015·0 cites·19 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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