P

Inventor

YAU JENG-BANG

US133 patents
⚠️ This page may combine multiple inventors who share the name “YAU JENG-BANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

37 patents
US9536788B1Jan 3, 2017

Complementary SOI lateral bipolar transistors with backplate bias

IBM44 citations98
US10468503B1Nov 5, 2019

Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices

IBM14 citations94
US10283516B1May 7, 2019

Stacked nanosheet field effect transistor floating-gate EEPROM cell and array

IBM16 citations94
US10056379B1Aug 21, 2018

Low voltage (power) junction FET with all-around junction gate

IBM13 citations93
US9318585B1Apr 19, 2016

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

IBM30 citations93
US9437718B1Sep 6, 2016

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

IBM16 citations92
US8030145B2Oct 4, 2011

Back-gated fully depleted SOI transistor

IBM23 citations92
US10991711B2Apr 27, 2021

Stacked-nanosheet semiconductor structures

IBM11 citations86
US10741645B2Aug 11, 2020

Thin-base high frequency lateral bipolar junction transistor

IBM5 citations84
US10483368B1Nov 19, 2019

Single crystalline extrinsic bases for bipolar junction structures

IBM6 citations84
US10269714B2Apr 23, 2019

Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements

IBM4 citations84
US9997619B1Jun 12, 2018

Bipolar junction transistors and methods forming same

IBM7 citations84
US9947649B1Apr 17, 2018

Large area electrostatic dischage for vertical transistor structures

IBM10 citations84
US9852938B1Dec 26, 2017

Passivated germanium-on-insulator lateral bipolar transistors

IBM9 citations84
US9799756B1Oct 24, 2017

Germanium lateral bipolar transistor with silicon passivation

IBM11 citations84
US9726631B1Aug 8, 2017

Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base

IBM12 citations84
US9679967B1Jun 13, 2017

Contact resistance reduction by III-V Ga deficient surface

IBM10 citations84
US9659655B1May 23, 2017

Memory arrays using common floating gate series devices

IBM8 citations84
US9625409B1Apr 18, 2017

Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base

IBM11 citations84
US9502504B2Nov 22, 2016

SOI lateral bipolar transistors having surrounding extrinsic base portions

IBM20 citations84
US9496347B1Nov 15, 2016

Graded buffer epitaxy in aspect ratio trapping

IBM7 citations84
US9431301B1Aug 30, 2016

Nanowire field effect transistor (FET) and method for fabricating the same

IBM11 citations84
US9331097B2May 3, 2016

High speed bipolar junction transistor for high voltage applications

IBM9 citations84
US9064776B2Jun 23, 2015

Radiation hardened transistors based on graphene and carbon nanotubes

IBM12 citations84
US9059195B2Jun 16, 2015

Lateral bipolar transistors having partially-depleted intrinsic base

IBM6 citations84
US8361829B1Jan 29, 2013

On-chip radiation dosimeter

IBM8 citations84
US10879202B1Dec 29, 2020

System and method for forming solder bumps

IBM6 citations83
US7767546B1Aug 3, 2010

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

IBM12 citations83
US11177372B2Nov 16, 2021

Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices

IBM1 citations73
US11101219B2Aug 24, 2021

Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements

IBM3 citations73
US10985105B2Apr 20, 2021

Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements

IBM3 citations73
US10957707B2Mar 23, 2021

Vertical transistor based radiation dosimeter

IBM2 citations73
US10916629B2Feb 9, 2021

Nanosheet-CMOS EPROM device with epitaxial oxide charge storage region

IBM3 citations73
US10900952B2Jan 26, 2021

Dual surface charge sensing biosensor

IBM2 citations73
US10784347B1Sep 22, 2020

High-performance lateral BJT with epitaxial lightly doped intrinsic base

IBM2 citations73
US10707336B1Jul 7, 2020

High-performance lateral BJT with epitaxial lightly doped intrinsic base

IBM5 citations73
US10629730B2Apr 21, 2020

Body contact in Fin field effect transistor design

IBM2 citations73

LIN YU-MING

6 patents

CAI JIN

2 patents

DENNARD ROBERT H

2 patents

CABRAL JR CYRIL

1 patent

GORDON MICHAEL

1 patent

UNIV BAR ILAN

1 patent

Showing the top 50 of 133 patents by PatentIndex Score.