Inventor
YAU JENG-BANG
US133 patents
⚠️ This page may combine multiple inventors who share the name “YAU JENG-BANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
37 patentsUS9536788B1Jan 3, 2017
Complementary SOI lateral bipolar transistors with backplate bias
IBM44 citations98
US10468503B1Nov 5, 2019
Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices
IBM14 citations94
US10283516B1May 7, 2019
Stacked nanosheet field effect transistor floating-gate EEPROM cell and array
IBM16 citations94
US10056379B1Aug 21, 2018
Low voltage (power) junction FET with all-around junction gate
IBM13 citations93
US9318585B1Apr 19, 2016
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
IBM30 citations93
US9437718B1Sep 6, 2016
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
IBM16 citations92
US8030145B2Oct 4, 2011
Back-gated fully depleted SOI transistor
IBM23 citations92
US10991711B2Apr 27, 2021
Stacked-nanosheet semiconductor structures
IBM11 citations86
US10741645B2Aug 11, 2020
Thin-base high frequency lateral bipolar junction transistor
IBM5 citations84
US10483368B1Nov 19, 2019
Single crystalline extrinsic bases for bipolar junction structures
IBM6 citations84
US10269714B2Apr 23, 2019
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM4 citations84
US9997619B1Jun 12, 2018
Bipolar junction transistors and methods forming same
IBM7 citations84
US9947649B1Apr 17, 2018
Large area electrostatic dischage for vertical transistor structures
IBM10 citations84
US9852938B1Dec 26, 2017
Passivated germanium-on-insulator lateral bipolar transistors
IBM9 citations84
US9799756B1Oct 24, 2017
Germanium lateral bipolar transistor with silicon passivation
IBM11 citations84
US9726631B1Aug 8, 2017
Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
IBM12 citations84
US9679967B1Jun 13, 2017
Contact resistance reduction by III-V Ga deficient surface
IBM10 citations84
US9659655B1May 23, 2017
Memory arrays using common floating gate series devices
IBM8 citations84
US9625409B1Apr 18, 2017
Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
IBM11 citations84
US9502504B2Nov 22, 2016
SOI lateral bipolar transistors having surrounding extrinsic base portions
IBM20 citations84
US9496347B1Nov 15, 2016
Graded buffer epitaxy in aspect ratio trapping
IBM7 citations84
US9431301B1Aug 30, 2016
Nanowire field effect transistor (FET) and method for fabricating the same
IBM11 citations84
US9331097B2May 3, 2016
High speed bipolar junction transistor for high voltage applications
IBM9 citations84
US9064776B2Jun 23, 2015
Radiation hardened transistors based on graphene and carbon nanotubes
IBM12 citations84
US9059195B2Jun 16, 2015
Lateral bipolar transistors having partially-depleted intrinsic base
IBM6 citations84
US8361829B1Jan 29, 2013
On-chip radiation dosimeter
IBM8 citations84
US10879202B1Dec 29, 2020
System and method for forming solder bumps
IBM6 citations83
US7767546B1Aug 3, 2010
Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer
IBM12 citations83
US11177372B2Nov 16, 2021
Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devices
IBM1 citations73
US11101219B2Aug 24, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10985105B2Apr 20, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10957707B2Mar 23, 2021
Vertical transistor based radiation dosimeter
IBM2 citations73
US10916629B2Feb 9, 2021
Nanosheet-CMOS EPROM device with epitaxial oxide charge storage region
IBM3 citations73
US10900952B2Jan 26, 2021
Dual surface charge sensing biosensor
IBM2 citations73
US10784347B1Sep 22, 2020
High-performance lateral BJT with epitaxial lightly doped intrinsic base
IBM2 citations73
US10707336B1Jul 7, 2020
High-performance lateral BJT with epitaxial lightly doped intrinsic base
IBM5 citations73
US10629730B2Apr 21, 2020
Body contact in Fin field effect transistor design
IBM2 citations73
LIN YU-MING
6 patentsUS8673703B2Mar 18, 2014
Fabrication of graphene nanoelectronic devices on SOI structures
LIN YU-MING17 citations92
US8105928B2Jan 31, 2012
Graphene based switching device having a tunable bandgap
LIN YU-MING20 citations92
US8803131B2Aug 12, 2014
Metal-free integrated circuits comprising graphene and carbon nanotubes
LIN YU-MING11 citations84
US8796668B2Aug 5, 2014
Metal-free integrated circuits comprising graphene and carbon nanotubes
LIN YU-MING12 citations84
US8546246B2Oct 1, 2013
Radiation hardened transistors based on graphene and carbon nanotubes
LIN YU-MING14 citations84
US8455861B2Jun 4, 2013
Graphene based switching device having a tunable bandgap
LIN YU-MING8 citations84
CAI JIN
2 patentsDENNARD ROBERT H
2 patentsCABRAL JR CYRIL
1 patentGORDON MICHAEL
1 patentUNIV BAR ILAN
1 patentShowing the top 50 of 133 patents by PatentIndex Score.