Low voltage (power) junction FET with all-around junction gate

Abstract

A method for manufacturing a semiconductor device comprises forming a bottom source/drain region on a semiconductor substrate, forming a channel region extending vertically from the bottom source/drain region, growing a top source/drain region from an upper portion of the channel region, and growing a gate region from a lower portion of the channel region under the upper portion, wherein the gate region is on more than one side of the channel region.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 forming a bottom source/drain region on a semiconductor substrate; 
 forming a channel region extending vertically from the bottom source/drain region; 
 growing a top source/drain region from an upper portion of the channel region; 
 growing a gate region from a lower portion of the channel region under the upper portion; and 
 forming a counter doped layer between the bottom source/drain region and the semiconductor substrate; 
 wherein the gate region is on more than one side of the channel region. 
 
     
     
       2. The method according to  claim 1 , wherein the gate region surrounds the channel region on all sides. 
     
     
       3. The method according to  claim 1 , further comprising forming a bottom spacer between the bottom source/drain region and the gate region. 
     
     
       4. The method according to  claim 3 , further comprising forming a top spacer between the top source/drain region and the gate region. 
     
     
       5. The method according to  claim 1 , wherein growing the top source/drain region comprises epitaxial growth. 
     
     
       6. The method according to  claim 1 , wherein growing the gate region comprises epitaxial growth. 
     
     
       7. A method of manufacturing a semiconductor device, comprising:
 forming a bottom source/drain region on a semiconductor substrate; 
 forming a channel region extending vertically from the bottom source/drain region; 
 growing a top source/drain region from an upper portion of the channel region; 
 growing a gate region from a lower portion of the channel region under the upper portion; 
 forming a sacrificial layer on the bottom source/drain region; and 
 forming a trench in the sacrificial layer; 
 wherein the gate region is on more than one side of the channel region; and 
 wherein forming the channel region comprises epitaxially growing the channel region in the trench. 
 
     
     
       8. The method according to  claim 7 , further comprising:
 forming an oxide on exposed portions of the sacrificial layer in the trench prior to epitaxially growing the channel region. 
 
     
     
       9. The method according to  claim 7 , further comprising forming an oxide layer on the sacrificial layer, wherein the trench extends through the oxide layer. 
     
     
       10. The method according to  claim 9 , further comprising recessing a portion of the channel region in the oxide layer. 
     
     
       11. The method according to  claim 10 , further comprising filling a vacancy left by the recessing by depositing a nitride layer on a remaining portion of the channel region. 
     
     
       12. The method according to  claim 11 , further comprising removing the oxide layer prior to growing the top source/drain region. 
     
     
       13. The method according to  claim 7 , further comprising removing the sacrificial layer prior to growing the gate region.