Inventor · disambiguated record
Karthik Balakrishnan
Also filed as: BALAKRISHNAN KARTHIK · BALAKRISHNAN KARTHIK NARAYANAN
319 granted patents·25 pending applications·2,166 citations·filing 2002–2024
99Inventor score
Top patents by PatentIndex Score
344 records- 0199US11315938B1Stacked nanosheet romIBM·Filed 2020·Granted Apr 26, 2022·13 cites·20 claims
- 0299US9893207B1Programmable read only memory (ROM) integrated in tight pitch vertical transistor structuresIBM·Filed 2017·Granted Feb 13, 2018·33 cites·20 claims
- 0399US9837414B1Stacked complementary FETs featuring vertically stacked horizontal nanowiresIBM·Filed 2016·Granted Dec 5, 2017·173 cites·20 claims
- 0499US9773913B1Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistanceIBM·Filed 2016·Granted Sep 26, 2017·87 cites·20 claims
- 0599US9653289B1Fabrication of nano-sheet transistors with different threshold voltagesIBM·Filed 2016·Granted May 16, 2017·148 cites·14 claims
- 0699US9647123B1Self-aligned sigma extension regions for vertical transistorsIBM·Filed 2016·Granted May 9, 2017·43 cites·20 claims
- 0799US9647112B1Fabrication of strained vertical P-type field effect transistors by bottom condensationIBM·Filed 2016·Granted May 9, 2017·47 cites·20 claims
- 0899US9570551B1Replacement III-V or germanium nanowires by unilateral confined epitaxial growthIBM·Filed 2016·Granted Feb 14, 2017·87 cites·10 claims
- 0999US9525064B1Channel-last replacement metal-gate vertical field effect transistorIBM·Filed 2015·Granted Dec 20, 2016·62 cites·5 claims
- 1099US9443982B1Vertical transistor with air gap spacersIBM·Filed 2016·Granted Sep 13, 2016·93 cites·20 claims
- 1199US9425291B1Stacked nanosheets by aspect ratio trappingIBM·Filed 2015·Granted Aug 23, 2016·39 cites·9 claims
- 1298US11101374B1Nanosheet gated diodeIBM·Filed 2020·Granted Aug 24, 2021·5 cites·20 claims
- 1398US10825921B2Lateral bipolar junction transistor with controlled junctionIBM·Filed 2018·Granted Nov 3, 2020·22 cites·6 claims
- 1498US10468503B1Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devicesIBM·Filed 2018·Granted Nov 5, 2019·14 cites·7 claims
- 1598US9953973B1Diode connected vertical transistorIBM·Filed 2017·Granted Apr 24, 2018·23 cites·10 claims
- 1698US9876015B1Tight pitch inverter using vertical transistorsIBM·Filed 2017·Granted Jan 23, 2018·31 cites·8 claims
- 1798US9871140B1Dual strained nanosheet CMOS and methods for fabricatingIBM·Filed 2017·Granted Jan 16, 2018·37 cites·19 claims
- 1898US9859420B1Tapered vertical FET having III-V channelIBM·Filed 2016·Granted Jan 2, 2018·22 cites·10 claims
- 1998US9799777B1Floating gate memory in a channel last vertical FET flowIBM·Filed 2016·Granted Oct 24, 2017·23 cites·20 claims
- 2098US9780100B1Vertical floating gate memory with variable channel doping profileIBM·Filed 2016·Granted Oct 3, 2017·26 cites·6 claims
- 2198US9780088B1Co-fabrication of vertical diodes and fin field effect transistors on the same substrateIBM·Filed 2016·Granted Oct 3, 2017·29 cites·14 claims
- 2298US9761726B1Vertical field effect transistor with undercut buried insulating layer to improve contact resistanceIBM·Filed 2016·Granted Sep 12, 2017·24 cites·10 claims
- 2398US9728542B1High density programmable e-fuse co-integrated with vertical FETsIBM·Filed 2016·Granted Aug 8, 2017·37 cites·16 claims
- 2498US9653465B1Vertical transistors having different gate lengthsIBM·Filed 2016·Granted May 16, 2017·35 cites·16 claims
- 2598US9640667B1III-V vertical field effect transistors with tunable bandgap source/drain regionsIBM·Filed 2016·Granted May 2, 2017·32 cites·18 claims
- 2698US9570356B1Multiple gate length vertical field-effect-transistorsIBM·Filed 2015·Granted Feb 14, 2017·40 cites·12 claims
- 2798US9472555B1Nanosheet CMOS with hybrid orientationIBM·Filed 2015·Granted Oct 18, 2016·27 cites·10 claims
- 2898US9425293B1Stacked nanowires with multi-threshold voltage solution for pFETsIBM·Filed 2015·Granted Aug 23, 2016·36 cites·10 claims
- 2998US9362383B1Highly scaled tunnel FET with tight pitch and method to fabricate sameIBM·Filed 2015·Granted Jun 7, 2016·31 cites·15 claims
- 3098US9349868B1Gate all-around FinFET device and a method of manufacturing sameIBM·Filed 2015·Granted May 24, 2016·23 cites·19 claims
- 3197US11315923B2Stacked nanosheet inverterIBM·Filed 2020·Granted Apr 26, 2022·4 cites·20 claims
- 3297US10177235B2Nano-sheet transistors with different threshold voltagesIBM·Filed 2017·Granted Jan 8, 2019·14 cites·19 claims
- 3397US10069008B1Vertical transistor pass gate deviceIBM·Filed 2017·Granted Sep 4, 2018·16 cites·8 claims
- 3497US10056379B1Low voltage (power) junction FET with all-around junction gateIBM·Filed 2017·Granted Aug 21, 2018·13 cites·13 claims
- 3597US9806173B2Channel-last replacement metal-gate vertical field effect transistorIBM·Filed 2016·Granted Oct 31, 2017·16 cites·14 claims
- 3697US9793401B1Vertical field effect transistor including extension and stressorsIBM·Filed 2016·Granted Oct 17, 2017·20 cites·15 claims
- 3797US9666669B1Superlattice lateral bipolar junction transistorIBM·Filed 2015·Granted May 30, 2017·12 cites·15 claims
- 3897US9484405B1Stacked nanowire devices formed using lateral aspect ratio trappingIBM·Filed 2015·Granted Nov 1, 2016·20 cites·17 claims
- 3997US9406748B1Perfectly shaped controlled nanowiresIBM·Filed 2015·Granted Aug 2, 2016·16 cites·15 claims
- 4096US11189701B1Bipolar junction transistor with vertically integrated resistorIBM·Filed 2020·Granted Nov 30, 2021·3 cites·20 claims
- 4196US10991711B2Stacked-nanosheet semiconductor structuresIBM·Filed 2019·Granted Apr 27, 2021·11 cites·16 claims
- 4296US10283516B1Stacked nanosheet field effect transistor floating-gate EEPROM cell and arrayIBM·Filed 2018·Granted May 7, 2019·16 cites·20 claims
- 4396US9786758B1Vertical Schottky barrier FETIBM·Filed 2016·Granted Oct 10, 2017·13 cites·14 claims
- 4496US9722048B1Vertical transistors with reduced bottom electrode series resistanceIBM·Filed 2016·Granted Aug 1, 2017·13 cites·14 claims
- 4596US9716145B2Strained stacked nanowire field-effect transistors (FETs)IBM·Filed 2015·Granted Jul 25, 2017·13 cites·15 claims
- 4696US9653580B2Semiconductor device including strained finFETIBM·Filed 2015·Granted May 16, 2017·12 cites·7 claims
- 4796US9524969B1Integrated circuit having strained fins on bulk substrateIBM·Filed 2015·Granted Dec 20, 2016·12 cites·3 claims
- 4896US9496260B1Tall strained high percentage silicon germanium fins for CMOSIBM·Filed 2015·Granted Nov 15, 2016·13 cites·11 claims
- 4996US9496400B1FinFET with stacked faceted S/D epitaxy for improved contact resistanceIBM·Filed 2015·Granted Nov 15, 2016·12 cites·20 claims
- 5096US9490332B1Atomic layer doping and spacer engineering for reduced external resistance in finFETsIBM·Filed 2015·Granted Nov 8, 2016·17 cites·20 claims
Showing the top 50 of 344 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →