Inventor · disambiguated record
Alexander Reznicek
Also filed as: REZNICEK ALEXANDER
1,290 granted patents·163 pending applications·8,451 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
1,453 records- 0199US11315938B1Stacked nanosheet romIBM·Filed 2020·Granted Apr 26, 2022·13 cites·20 claims
- 0299US11201153B2Stacked field effect transistor with wrap-around contactsIBM·Filed 2020·Granted Dec 14, 2021·9 cites·15 claims
- 0399US11164792B2Complementary field-effect transistorsIBM·Filed 2020·Granted Nov 2, 2021·8 cites·20 claims
- 0499US11075273B1Nanosheet electrostatic discharge structureIBM·Filed 2020·Granted Jul 27, 2021·20 cites·20 claims
- 0599US11069684B1Stacked field effect transistors with reduced coupling effectIBM·Filed 2020·Granted Jul 20, 2021·49 cites·20 claims
- 0699US10763177B1I/O device for gate-all-around transistorsIBM·Filed 2019·Granted Sep 1, 2020·40 cites·20 claims
- 0799US10236217B1Stacked field-effect transistors (FETs) with shared and non-shared gatesIBM·Filed 2017·Granted Mar 19, 2019·50 cites·17 claims
- 0899US10229986B1Vertical transport field-effect transistor including dual layer top spacerIBM·Filed 2017·Granted Mar 12, 2019·35 cites·8 claims
- 0999US10170638B1Nanosheet substrate isolated source/drain epitaxy by dual bottom spacerIBM·Filed 2018·Granted Jan 1, 2019·69 cites·20 claims
- 1099US10103065B1Gate metal patterning for tight pitch applicationsIBM·Filed 2017·Granted Oct 16, 2018·50 cites·12 claims
- 1199US9954058B1Self-aligned air gap spacer for nanosheet CMOS devicesIBM·Filed 2017·Granted Apr 24, 2018·79 cites·11 claims
- 1299US9893207B1Programmable read only memory (ROM) integrated in tight pitch vertical transistor structuresIBM·Filed 2017·Granted Feb 13, 2018·33 cites·20 claims
- 1399US9837414B1Stacked complementary FETs featuring vertically stacked horizontal nanowiresIBM·Filed 2016·Granted Dec 5, 2017·173 cites·20 claims
- 1499US9773913B1Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistanceIBM·Filed 2016·Granted Sep 26, 2017·87 cites·20 claims
- 1599US9773901B1Bottom spacer formation for vertical transistorIBM·Filed 2016·Granted Sep 26, 2017·43 cites·10 claims
- 1699US9716158B1Air gap spacer between contact and gate regionIBM·Filed 2016·Granted Jul 25, 2017·111 cites·19 claims
- 1799US9659963B2Contact formation to 3D monolithic stacked FinFETsIBM·Filed 2015·Granted May 23, 2017·79 cites·20 claims
- 1899US9653289B1Fabrication of nano-sheet transistors with different threshold voltagesIBM·Filed 2016·Granted May 16, 2017·148 cites·14 claims
- 1999US9647123B1Self-aligned sigma extension regions for vertical transistorsIBM·Filed 2016·Granted May 9, 2017·43 cites·20 claims
- 2099US9647112B1Fabrication of strained vertical P-type field effect transistors by bottom condensationIBM·Filed 2016·Granted May 9, 2017·47 cites·20 claims
- 2199US9570551B1Replacement III-V or germanium nanowires by unilateral confined epitaxial growthIBM·Filed 2016·Granted Feb 14, 2017·87 cites·10 claims
- 2299US9525064B1Channel-last replacement metal-gate vertical field effect transistorIBM·Filed 2015·Granted Dec 20, 2016·62 cites·5 claims
- 2399US9443982B1Vertical transistor with air gap spacersIBM·Filed 2016·Granted Sep 13, 2016·93 cites·20 claims
- 2499US9425291B1Stacked nanosheets by aspect ratio trappingIBM·Filed 2015·Granted Aug 23, 2016·39 cites·9 claims
- 2599US9356027B1Dual work function integration for stacked FinFETIBM·Filed 2015·Granted May 31, 2016·40 cites·9 claims
- 2699US9287135B1Sidewall image transfer process for fin patterningIBM·Filed 2015·Granted Mar 15, 2016·67 cites·20 claims
- 2799US8969934B1Gate-all-around nanowire MOSFET and method of formationIBM·Filed 2013·Granted Mar 3, 2015·326 cites·4 claims
- 2899US8895395B1Reduced resistance SiGe FinFET devices and method of forming sameIBM·Filed 2013·Granted Nov 25, 2014·335 cites·15 claims
- 2999US8796093B1Doping of FinFET structuresIBM·Filed 2013·Granted Aug 5, 2014·71 cites·22 claims
- 3098US11757036B2Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devicesIBM·Filed 2021·Granted Sep 12, 2023·4 cites·14 claims
- 3198US11521927B2Buried power rail for scaled vertical transport field effect transistorIBM·Filed 2020·Granted Dec 6, 2022·4 cites·20 claims
- 3298US11227922B2Sloped epitaxy buried contactIBM·Filed 2020·Granted Jan 18, 2022·6 cites·21 claims
- 3398US11205698B2Multiple work function nanosheet transistors with inner spacer modulationIBM·Filed 2020·Granted Dec 21, 2021·6 cites·20 claims
- 3498US11177258B2Stacked nanosheet CFET with gate all around structureIBM·Filed 2020·Granted Nov 16, 2021·15 cites·20 claims
- 3598US11164793B2Reduced source/drain coupling for CFETIBM·Filed 2020·Granted Nov 2, 2021·6 cites·15 claims
- 3698US11101374B1Nanosheet gated diodeIBM·Filed 2020·Granted Aug 24, 2021·5 cites·20 claims
- 3798US10879308B1Stacked nanosheet 4T2R unit cell for neuromorphic computingIBM·Filed 2019·Granted Dec 29, 2020·42 cites·20 claims
- 3898US10825736B1Nanosheet with selective dipole diffusion into high-kIBM·Filed 2019·Granted Nov 3, 2020·44 cites·20 claims
- 3998US10825921B2Lateral bipolar junction transistor with controlled junctionIBM·Filed 2018·Granted Nov 3, 2020·22 cites·6 claims
- 4098US10734286B1Multiple dielectrics for gate-all-around transistorsIBM·Filed 2019·Granted Aug 4, 2020·32 cites·17 claims
- 4198US10553696B2Full air-gap spacers for gate-all-around nanosheet field effect transistorsIBM·Filed 2017·Granted Feb 4, 2020·21 cites·17 claims
- 4298US10468503B1Stacked vertical transport field effect transistor electrically erasable programmable read only memory (EEPROM) devicesIBM·Filed 2018·Granted Nov 5, 2019·14 cites·7 claims
- 4398US10381438B2Vertically stacked NFETS and PFETS with gate-all-around structureIBM·Filed 2017·Granted Aug 13, 2019·25 cites·11 claims
- 4498US10374039B1Enhanced field bipolar resistive RAM integrated with FDSOI technologyIBM·Filed 2018·Granted Aug 6, 2019·28 cites·20 claims
- 4598US10269869B1High-density field-enhanced ReRAM integrated with vertical transistorsIBM·Filed 2017·Granted Apr 23, 2019·22 cites·19 claims
- 4698US9953973B1Diode connected vertical transistorIBM·Filed 2017·Granted Apr 24, 2018·23 cites·10 claims
- 4798US9954102B1Vertical field effect transistor with abrupt extensions at a bottom source/drain structureIBM·Filed 2017·Granted Apr 24, 2018·31 cites·10 claims
- 4898US9876015B1Tight pitch inverter using vertical transistorsIBM·Filed 2017·Granted Jan 23, 2018·31 cites·8 claims
- 4998US9871140B1Dual strained nanosheet CMOS and methods for fabricatingIBM·Filed 2017·Granted Jan 16, 2018·37 cites·19 claims
- 5098US9859420B1Tapered vertical FET having III-V channelIBM·Filed 2016·Granted Jan 2, 2018·22 cites·10 claims
Showing the top 50 of 1,453 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →