Inventor · disambiguated record
Tuman Earl Allen, Iii
Also filed as: ALLEN III TUMAN EARL · ALLEN TUMAN E · ALLEN TUMAN EARL
28 granted patents·1 pending application·139 citations·filing 1998–2019
96Inventor score
Top patents by PatentIndex Score
29 records- 0195US10256406B2Semiconductor structures including liners and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 9, 2019·12 cites·21 claims
- 0291US9704923B1Dual-layer dielectric in memory deviceINTEL CORP·Filed 2015·Granted Jul 11, 2017·6 cites·8 claims
- 0391US9484196B2Semiconductor structures including liners comprising alucone and related methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Nov 1, 2016·10 cites·24 claims
- 0491US7547945B2Transistor devices, transistor structures and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 16, 2009·33 cites·41 claims
- 0590US10629652B2Dual-layer dielectric in memory deviceINTEL CORP·Filed 2018·Granted Apr 21, 2020·5 cites·27 claims
- 0688US7825462B2TransistorsMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 2, 2010·8 cites·14 claims
- 0785US10134809B2Dual-layer dielectric in memory deviceINTEL CORP·Filed 2017·Granted Nov 20, 2018·3 cites·7 claims
- 0885US8648414B2Semiconductor structures including bodies of semiconductor material, devices including such structures and related methodsTANG SANH D·Filed 2011·Granted Feb 11, 2014·5 cites·23 claims
- 0980US11038107B2Semiconductor devices including liners, and related systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jun 15, 2021·2 cites·23 claims
- 1074US6533953B2Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 18, 2003·10 cites·12 claims
- 1173US11223014B2Semiconductor structures including liners comprising alucone and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 11, 2022·1 cites·18 claims
- 1272US8120101B2Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistorsTANG SANH D·Filed 2010·Granted Feb 21, 2012·2 cites·10 claims
- 1370US10573513B2Semiconductor structures including liners comprising alucone and related methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 25, 2020·1 cites·12 claims
- 1469US6878300B2Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 12, 2005·7 cites·29 claims
- 1567US6235213B1Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 1998·Granted May 22, 2001·20 cites·11 claims
- 1665US7825033B2Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materialsMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 2, 2010·2 cites·27 claims
- 1764US9881972B2Array of memory cells and methods of forming an array of memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 30, 2018·1 cites·20 claims
- 1863US8512582B2Methods of patterning a substrateKIEHLBAUCH MARK·Filed 2008·Granted Aug 20, 2013·1 cites·39 claims
- 1960US6478978B1Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 12, 2002·4 cites·13 claims
- 2058US8987108B2Methods of forming semiconductor structures including bodies of semiconductor materialMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 24, 2015·0 cites·20 claims
- 2158US6800561B2Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 5, 2004·3 cites·23 claims
- 2257US8143167B2Fabrication processes for forming dual depth trenches using a dry etch that deposits a polymerFANG XIAOLONG·Filed 2009·Granted Mar 27, 2012·1 cites·29 claims
- 2355US9362418B2Semiconductor structures including bodies of semiconductor material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2015·Granted Jun 7, 2016·0 cites·21 claims
- 2453US8003541B2Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materialsMICRON TECHNOLOGY INC·Filed 2010·Granted Aug 23, 2011·0 cites·16 claims
- 2553US7501684B2Methods of forming semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 10, 2009·0 cites·20 claims
- 2650US6967170B2Methods of forming silicon nitride spacers, and methods of forming dielectric sidewall spacersMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 22, 2005·1 cites·30 claims
- 2749US11424291B2Array of cross point memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 23, 2022·0 cites·9 claims
- 2849US6479393B1Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacersMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 12, 2002·1 cites·23 claims
- 2946US2007246795A1Dual depth shallow trench isolation and methods to form sameMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
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