Inventor · disambiguated record
Daniel Tekleab
Also filed as: TEKLEAB DANIEL · TEKLEAB DANIEL K
8 granted patents·2 pending applications·39 citations·filing 2010–2022
83Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC4CHEN XIANGDONG2IBM1LUO TIEN YING1SEMICONDUCTOR COMPONENTS IND1
Top patents by PatentIndex Score
10 records- 0189US8866266B2Silicon nanotube MOSFETIBM·Filed 2013·Granted Oct 21, 2014·9 cites·22 claims
- 0287US8298897B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2012·Granted Oct 30, 2012·8 cites·9 claims
- 0386US8871576B2Silicon nanotube MOSFETTEKLEAB DANIEL·Filed 2011·Granted Oct 28, 2014·11 cites·16 claims
- 0484US8237197B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2010·Granted Aug 7, 2012·7 cites·20 claims
- 0569USRE45955EDual high-K oxides with SiGe channelLUO TIEN YING·Filed 2014·Granted Mar 29, 2016·3 cites·25 claims
- 0662US9595555B2Pixel isolation regions formed with conductive layersSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Mar 14, 2017·1 cites·18 claims
- 0759US2016141317A1Pixel isolation regions formed with doped epitaxial layerSEMICONDUCTOR COMPONENTS IND·Filed 2014·Application pending·0 cites
- 0854US2023282677A1Anti-blooming control in overflow image sensor pixelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 0943US9812489B2Pixels with photodiodes formed from epitaxial siliconSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Nov 7, 2017·0 cites·14 claims
- 1041US10002895B2Apparatus and methods for buried channel transfer gateSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jun 19, 2018·0 cites·10 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →