Inventor · disambiguated record
Peter Almern Losee
Also filed as: LOSEE PETER · LOSEE PETER ALMERN
48 granted patents·4 pending applications·308 citations·filing 2004–2021
97Inventor score
Top patents by PatentIndex Score
52 records- 0198US10937870B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensionsGEN ELECTRIC·Filed 2020·Granted Mar 2, 2021·4 cites·20 claims
- 0298US7829402B2MOSFET devices and methods of makingGEN ELECTRIC·Filed 2009·Granted Nov 9, 2010·129 cites·33 claims
- 0396US8278711B2Semiconductor device and method of making the sameRAO RAMAKRISHNA·Filed 2010·Granted Oct 2, 2012·48 cites·20 claims
- 0495US9704949B1Active area designs for charge-balanced diodesGEN ELECTRIC·Filed 2016·Granted Jul 11, 2017·14 cites·21 claims
- 0592US10056457B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensionsGEN ELECTRIC·Filed 2017·Granted Aug 21, 2018·5 cites·19 claims
- 0690US10600871B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensionsGEN ELECTRIC·Filed 2017·Granted Mar 24, 2020·4 cites·19 claims
- 0790US10388737B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layerGEN ELECTRIC·Filed 2017·Granted Aug 20, 2019·4 cites·18 claims
- 0889US9735237B2Active area designs for silicon carbide super-junction power devicesGEN ELECTRIC·Filed 2015·Granted Aug 15, 2017·7 cites·18 claims
- 0989US8232637B2Insulated metal substrates incorporating advanced coolingBEAUPRE RICHARD ALFRED·Filed 2009·Granted Jul 31, 2012·20 cites·8 claims
- 1088US10096681B2Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cellsGEN ELECTRIC·Filed 2017·Granted Oct 9, 2018·3 cites·18 claims
- 1187US10243039B2Super-junction semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2016·Granted Mar 26, 2019·5 cites·12 claims
- 1287US9899512B2Silicon carbide device and method of making thereofGEN ELECTRIC·Filed 2016·Granted Feb 20, 2018·7 cites·20 claims
- 1385US9716144B2Semiconductor devices having channel regions with non-uniform edgeGEN ELECTRIC·Filed 2014·Granted Jul 25, 2017·5 cites·15 claims
- 1482US10192958B2Cellular layout for semiconductor devicesGEN ELECTRIC·Filed 2014·Granted Jan 29, 2019·4 cites·17 claims
- 1582US9406762B2Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2013·Granted Aug 2, 2016·4 cites·12 claims
- 1681US10955297B2Systems and methods for monitoring junction temperature of a semiconductor switchGEN ELECTRIC·Filed 2018·Granted Mar 23, 2021·3 cites·21 claims
- 1780US10586846B2System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2018·Granted Mar 10, 2020·2 cites·13 claims
- 1879US10566324B2Integrated gate resistors for semiconductor power conversion devicesGEN ELECTRIC·Filed 2017·Granted Feb 18, 2020·3 cites·29 claims
- 1978US11233157B2Systems and methods for unipolar charge balanced semiconductor power devicesGEN ELECTRIC·Filed 2018·Granted Jan 25, 2022·2 cites·22 claims
- 2078US10600649B2Systems and method for charge balanced semiconductor power devices with fast switching capabilityGEN ELECTRIC·Filed 2018·Granted Mar 24, 2020·2 cites·25 claims
- 2178US10002920B1System and method for edge termination of super-junction (SJ) devicesGEN ELECTRIC·Filed 2016·Granted Jun 19, 2018·2 cites·16 claims
- 2275US7144797B2Semiconductor device having multiple-zone junction termination extension, and method for fabricating the sameRENSSELAER POLYTECH INST·Filed 2004·Granted Dec 5, 2006·23 cites·17 claims
- 2372US9024328B2Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufactureGEN ELECTRIC·Filed 2013·Granted May 5, 2015·2 cites·17 claims
- 2467US9123798B2Insulating gate field effect transistor device and method for providing the sameGEN ELECTRIC·Filed 2012·Granted Sep 1, 2015·2 cites·23 claims
- 2564US12191384B2Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 2664US10957759B2Systems and methods for termination in silicon carbide charge balance power devicesGEN ELECTRIC·Filed 2018·Granted Mar 23, 2021·0 cites·16 claims
- 2764US10541338B2Edge termination designs for silicon carbide super-junction power devicesGEN ELECTRIC·Filed 2015·Granted Jan 21, 2020·1 cites·27 claims
- 2864US10199465B2Cellular layout for semiconductor devicesGEN ELECTRIC·Filed 2014·Granted Feb 5, 2019·1 cites·17 claims
- 2964US9997507B2Semiconductor assembly and method of manufactureGEN ELECTRIC·Filed 2013·Granted Jun 12, 2018·1 cites·10 claims
- 3059US11063115B2Semiconductor device and method of making thereofGEN ELECTRIC·Filed 2019·Granted Jul 13, 2021·0 cites·14 claims
- 3158US9006027B2Systems and methods for terminating junctions in wide bandgap semiconductor devicesSTUM ZACHARY MATTHEW·Filed 2012·Granted Apr 14, 2015·1 cites·30 claims
- 3254US2014361315A1Semiconductor device and method of manufacturing the sameGEN ELECTRIC·Filed 2014·Application pending·0 cites
- 3350US11031472B2Systems and methods for integrated diode field-effect transistor semiconductor devicesGEN ELECTRIC·Filed 2019·Granted Jun 8, 2021·0 cites·21 claims
- 3449US10608079B2High energy ion implantation for junction isolation in silicon carbide devicesGEN ELECTRIC·Filed 2018·Granted Mar 31, 2020·0 cites·26 claims
- 3549US10541300B2Semiconductor device and method of making thereofGEN ELECTRIC·Filed 2016·Granted Jan 21, 2020·0 cites·28 claims
- 3649US9735263B2Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the sameGEN ELECTRIC·Filed 2013·Granted Aug 15, 2017·0 cites·18 claims
- 3748US8536641B1Semiconductor deviceRAO RAMAKRISHNA·Filed 2012·Granted Sep 17, 2013·0 cites·7 claims
- 3848US2016307997A1Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2016·Application pending·0 cites
- 3946US10636660B2Super-junction semiconductor device fabricationGEN ELECTRIC·Filed 2018·Granted Apr 28, 2020·0 cites·24 claims
- 4046US8815721B2Semiconductor device and method of manufacturing the sameSTUM ZACHARY MATTHEW·Filed 2010·Granted Aug 26, 2014·0 cites·19 claims
- 4145US10347489B2Semiconductor devices and methods of manufactureGEN ELECTRIC·Filed 2013·Granted Jul 9, 2019·0 cites·20 claims
- 4245US10211304B2Semiconductor device having gate trench in JFET regionGEN ELECTRIC·Filed 2013·Granted Feb 19, 2019·0 cites·18 claims
- 4345US9748341B2Metal-oxide-semiconductor (MOS) devices with increased channel peripheryGEN ELECTRIC·Filed 2013·Granted Aug 29, 2017·0 cites·16 claims
- 4445US2010308340A1Semiconductor device having a buried channelGEN ELECTRIC·Filed 2009·Application pending·0 cites
- 4545US2011024765A1Silicon carbide semiconductor structures, devices and methods for making the sameGEN ELECTRIC·Filed 2009·Application pending·0 cites
- 4643US11069772B2Techniques for fabricating planar charge balanced (CB) metal-oxide-semiconductor field-effect transistor (MOSFET) devicesGEN ELECTRIC·Filed 2018·Granted Jul 20, 2021·0 cites·14 claims
- 4743US10403623B2Gate networks having positive temperature coefficients of resistance (PTC) for semiconductor power conversion devicesGEN ELECTRIC·Filed 2017·Granted Sep 3, 2019·0 cites·15 claims
- 4843US10269951B2Semiconductor device layout and method for forming sameGEN ELECTRIC·Filed 2017·Granted Apr 23, 2019·0 cites·5 claims
- 4942US8691634B2Optically triggered semiconductor device and method for making the sameELASSER AHMED·Filed 2013·Granted Apr 8, 2014·0 cites·7 claims
- 5041US9633998B2Semiconductor device and method for making the sameSOLOVIEV STANISLAV IVANOVICH·Filed 2012·Granted Apr 25, 2017·0 cites·25 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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