Inventor · disambiguated record
Cyril Cabral, Jr.
Also filed as: CABRAL CYRIL · CABRAL CYRIL JR · CABRAL JR CYRIL
187 granted patents·30 pending applications·3,730 citations·filing 1993–2022
99Inventor score
Top patents by PatentIndex Score
217 records- 0197US9190321B2Self-forming embedded diffusion barriersIBM·Filed 2013·Granted Nov 17, 2015·28 cites·7 claims
- 0297US7151023B1Metal gate MOSFET by full semiconductor metal alloy conversionIBM·Filed 2005·Granted Dec 19, 2006·80 cites·14 claims
- 0397US7105889B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2004·Granted Sep 12, 2006·93 cites·26 claims
- 0497US6921711B2Method for forming metal replacement gate of high performanceIBM·Filed 2003·Granted Jul 26, 2005·147 cites·25 claims
- 0596US9586857B2Controlling fragmentation of chemically strengthened glassIBM·Filed 2015·Granted Mar 7, 2017·13 cites·20 claims
- 0696US9490202B2Self-aligned airgap interconnect structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 8, 2016·23 cites·10 claims
- 0796US7112851B2Field effect transistor with electroplated metal gateIBM·Filed 2005·Granted Sep 26, 2006·36 cites·20 claims
- 0896US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0995US8900988B2Method for forming self-aligned airgap interconnect structuresLIN QINGHUANG·Filed 2011·Granted Dec 2, 2014·18 cites·11 claims
- 1095US7326610B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2005·Granted Feb 5, 2008·34 cites·13 claims
- 1195US5796166ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1996·Granted Aug 18, 1998·122 cites·7 claims
- 1294US9431354B2Activating reactions in integrated circuits through electrical dischargeIBM·Filed 2014·Granted Aug 30, 2016·12 cites·9 claims
- 1394US8633117B1Sputter and surface modification etch processing for metal patterning in integrated circuitsIBM·Filed 2012·Granted Jan 21, 2014·14 cites·20 claims
- 1494US8492897B2Microstructure modification in copper interconnect structuresCABRAL JR CYRIL·Filed 2011·Granted Jul 23, 2013·15 cites·10 claims
- 1594US8089157B2Contact metallurgy structureCABRAL JR CYRIL·Filed 2010·Granted Jan 3, 2012·14 cites·12 claims
- 1694US7843063B2Microstructure modification in copper interconnect structureIBM·Filed 2008·Granted Nov 30, 2010·29 cites·15 claims
- 1794US7405154B2Structure and method of forming electrodeposited contactsIBM·Filed 2006·Granted Jul 29, 2008·20 cites·1 claims
- 1894US6846734B2Method and process to make multiple-threshold metal gates CMOS technologyIBM·Filed 2002·Granted Jan 25, 2005·105 cites·27 claims
- 1994US6503833B1Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed therebyIBM·Filed 2000·Granted Jan 7, 2003·83 cites·35 claims
- 2094US6268291B1Method for forming electromigration-resistant structures by dopingIBM·Filed 1998·Granted Jul 31, 2001·183 cites·32 claims
- 2193US8431486B2Interconnect structure for improved time dependent dielectric breakdownCABRAL JR CYRIL·Filed 2010·Granted Apr 30, 2013·15 cites·19 claims
- 2293US6645861B2Self-aligned silicide process for silicon sidewall source and drain contactsIBM·Filed 2001·Granted Nov 11, 2003·71 cites·35 claims
- 2392US7452767B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2006·Granted Nov 18, 2008·15 cites·4 claims
- 2492US7067368B1Method for forming self-aligned dual salicide in CMOS technologiesIBM·Filed 2005·Granted Jun 27, 2006·17 cites·10 claims
- 2592US6555880B2Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed therebyIBM·Filed 2001·Granted Apr 29, 2003·54 cites·9 claims
- 2692US5625233AThin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxideIBM·Filed 1995·Granted Apr 29, 1997·116 cites·19 claims
- 2792US5576579ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1995·Granted Nov 19, 1996·83 cites·4 claims
- 2891US11715195B2Machine learning-based circuit board inspectionIBM·Filed 2021·Granted Aug 1, 2023·2 cites·17 claims
- 2991US8828870B2Microstructure modification in copper interconnect structuresIBM·Filed 2014·Granted Sep 9, 2014·8 cites·20 claims
- 3091US8193051B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsBOJARCZUK JR NESTOR A·Filed 2011·Granted Jun 5, 2012·14 cites·11 claims
- 3191US7928514B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2009·Granted Apr 19, 2011·12 cites·16 claims
- 3291US7381635B2Method and structure for reduction of soft error rates in integrated circuitsIBM·Filed 2005·Granted Jun 3, 2008·17 cites·15 claims
- 3391US7176116B2High performance FET with laterally thin extensionIBM·Filed 2005·Granted Feb 13, 2007·17 cites·20 claims
- 3490US8129267B2Alpha particle blocking wire structure and method fabricating sameCABRAL JR CYRIL·Filed 2008·Granted Mar 6, 2012·19 cites·30 claims
- 3590US7851357B2Method of forming electrodeposited contactsIBM·Filed 2008·Granted Dec 14, 2010·13 cites·8 claims
- 3690US7479683B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2004·Granted Jan 20, 2009·35 cites·17 claims
- 3790US7314789B2Structure and method to generate local mechanical gate stress for MOSFET channel mobility modificationIBM·Filed 2006·Granted Jan 1, 2008·13 cites·16 claims
- 3890US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 3990US7029966B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2003·Granted Apr 18, 2006·53 cites·2 claims
- 4090US6967131B2Field effect transistor with electroplated metal gateIBM·Filed 2003·Granted Nov 22, 2005·43 cites·22 claims
- 4190US6589874B2Method for forming electromigration-resistant structures by dopingIBM·Filed 2001·Granted Jul 8, 2003·52 cites·13 claims
- 4290US6323130B1Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridgingIBM·Filed 2000·Granted Nov 27, 2001·59 cites·16 claims
- 4390US5776823ATasin oxygen diffusion barrier in multilayer structuresIBM·Filed 1996·Granted Jul 7, 1998·67 cites·6 claims
- 4490US5624869AMethod of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogenIBM·Filed 1994·Granted Apr 29, 1997·70 cites·40 claims
- 4589US7745278B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectricsIBM·Filed 2008·Granted Jun 29, 2010·10 cites·22 claims
- 4689US6448131B1Method for increasing the capacitance of a trench capacitorIBM·Filed 2001·Granted Sep 10, 2002·48 cites·38 claims
- 4789US6444578B1Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devicesIBM·Filed 2001·Granted Sep 3, 2002·50 cites·50 claims
- 4889US6437440B1Thin film metal barrier for electrical interconnectionsIBM·Filed 2001·Granted Aug 20, 2002·59 cites·15 claims
- 4988US7868410B2Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flowIBM·Filed 2008·Granted Jan 11, 2011·13 cites·7 claims
- 5088US7667278B2Metal carbide gate structure and method of fabricationIBM·Filed 2006·Granted Feb 23, 2010·11 cites·13 claims
Showing the top 50 of 217 patent records by PatentIndex Score.
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