Inventor

KOHYAMA YUSUKE

JP79 patents

⚠️ This page may combine multiple inventors who share the name “KOHYAMA YUSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOHYAMA YUSUKE

TOSHIBA KK

Storage capacitor having undulated lower electrode for a semiconductor device

Semiconductor device including an improved terminal structure

Method for forming storage capacitor having undulated lower electrode for a semiconductor device

Semiconductor device and method for manufacturing the same

DRAM having a cup-shaped storage node electrode recessed within an insulating layer

Trench capacitor cells for a dram having single monocrystalline capacitor electrode

Semiconductor memory device having a stacked capacitor cell structure

Semiconductor device using fuse/anti-fuse system

Semiconductor device using damascene technique and manufacturing method therefor

Capacitor having a structure capable of restraining deterioration of dielectric film, semiconductor device having the capacitor and method of manufacturing the same

Semiconductor memory device and method for producing same

DRAM having a cup-shaped storage node electrode recessed within an insulating layer

Semiconductor memory device and manufacturing method thereof which make it possible to improve reliability of cell-capacitor and also to simplify the manufacturing processes

Structure of a capacitor section of a dynamic random-access memory

Semiconductor memory device and fabricating method

Structure of contact between wiring layers in semiconductor integrated circuit device

Semiconductor memory device having contact holes of differing structure

Semiconductor memory device including memory cells having a capacitor on bit line structure

Semiconductor device using dual damascene technology and method for manufacturing the same

Structure of contact between wiring layers in semiconductor integrated circuit device

Method of manufacturing a semiconductor device

Gettering of unwanted metal impurity introduced into semiconductor substrate during trench formation

Dynamic memory cell using hollow post shape channel thin-film transistor

Semiconductor memory device having cross-point DRAM cell structure

Dynamic semiconductor memory device having a trench capacitor

Semiconductor memory and method of fabricating the same

Semiconductor device having film for controlling diffusion of impurity

Semiconductor device and method for manufacturing the same

Solid-state image pickup device and method for manufacturing same

Semiconductor device having a hollow region and method of manufacturing the same

Electric fuse whose dielectric breakdown resistance is controlled by injecting impurities into an insulating film of a capacitor structure, and a method for manufacturing the same

Stacked capacitor-type semiconductor storage device and manufacturing method thereof

Integrated mosfet device with low resistance peripheral diffusion region contacts and low PN-junction failure memory diffusion contacts

Stacked capacitor-type semiconductor storage device and manufacturing method thereof

Stacked capacitor-type semiconductor storage device and manufacturing method thereof

Semiconductor device using damascene technique and manufacturing method therefor

Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same

Structure of a capacitor section of a dynamic random-access memory

Semiconductor memory device and fabrication method thereof

Stacked capacitor-type semiconductor storage device and manufacturing method thereof

COB DRAM having contact extending over element-isolating film

Structure of a capacitor section of a dynamic random-access memory

Semiconductor device using dual damascene technology and method for manufacturing the same

DRAM having a cup-shaped storage node electrode recessed within a semiconductor substrate

Semiconductor device adopting a self-aligned contact structure and method for manufacturing a semiconductor memory device

Semiconductor memory device of redundant circuit system

Semiconductor device and method of manufacturing the same

KOIKE HIDETOSHI

Semiconductor device with an electrode as an alignment mark, and method of manufacturing the same

TOSHIBA AMERICA ELECTRONIC

Reduction of short-circuiting between contacts at or near a tensile-compressive boundary

KOHYAMA YUSUKE

Solid-state imaging device with vertical gate electrode and method of manufacturing the same