Inventor
HWANG KIHYUN
KR55 patents
⚠️ This page may combine multiple inventors who share the name “HWANG KIHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS9130054B2Sep 8, 2015
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD29 citations93
US8872256B2Oct 28, 2014
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD29 citations91
US9768266B2Sep 19, 2017
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations83
US8377817B2Feb 19, 2013
Three dimensional semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations82
US11057183B2Jul 6, 2021
Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10903327B2Jan 26, 2021
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10658375B2May 19, 2020
Three-dimensional semiconductor memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US8980731B2Mar 17, 2015
Methods of forming a semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations72
US9202819B2Dec 1, 2015
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US12256564B2Mar 18, 2025
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
USRE50280EJan 21, 2025
Semiconductor memory device having insulation patterns and cell gate patterns
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113108B2Oct 8, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11888028B2Jan 30, 2024
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11888042B2Jan 30, 2024
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11723285B2Aug 8, 2023
Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11588032B2Feb 21, 2023
Three-dimensional semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11417731B2Aug 16, 2022
Semiconductor device including a field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11296277B2Apr 5, 2022
Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9466612B2Oct 11, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9257441B2Feb 9, 2016
Semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8765538B2Jul 1, 2014
Three dimensional semiconductor memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US10109747B2Oct 23, 2018
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9972638B2May 15, 2018
Methods of fabricating three-dimensional semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US9184302B2Nov 10, 2015
Three dimensional semiconductor memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
USRE46389EMay 2, 2017
Nonvolatile memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations49
KIM JINGYUN
3 patentsUS8415742B2Apr 9, 2013
Semiconductor memory device and method of forming the same
KIM JINGYUN34 citations96
US8173533B2May 8, 2012
Semiconductor memory device and method of forming the same
KIM JINGYUN15 citations92
US8084819B2Dec 27, 2011
Semiconductor memory device having insulation patterns and cell gate patterns
KIM JINGYUN30 citations92
SON YONG-HOON
3 patentsUS8450176B2May 28, 2013
Methods of manufacturing rewriteable three-dimensional semiconductor memory devices
SON YONG-HOON24 citations92
US9356033B2May 31, 2016
Three-dimensional semiconductor memory devices and methods of forming the same
SON YONG-HOON7 citations83
US8507918B2Aug 13, 2013
Multilayer semiconductor devices with channel patterns having a graded grain structure
SON YONG-HOON4 citations63
KIM JEEYONG
3 patentsKIM JUNG HO
2 patentsLEE WOOKHYOUNG
2 patentsPARK KWANGMIN
2 patentsSEOL KWANG SOO
1 patentYON GUKHYON
1 patentSON YONG HOON
1 patentCHAE SOODOO
1 patentKIM DONGWOO
1 patentNOH JINTAE
1 patentHUO ZONGLIANG
1 patentLEE SUNGHAE
1 patentJEONG JIN HA
1 patentYANG JUNKYU
1 patentShowing the top 50 of 55 patents by PatentIndex Score.