Inventor
KOTECHA HARISH N
21 patents
⚠️ This page may combine multiple inventors who share the name “KOTECHA HARISH N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
20 patentsUS4380057AApr 12, 1983
Electrically alterable double dense memory
IBM170 citations97
US4276095AJun 30, 1981
Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations
IBM155 citations97
US4805142AFeb 14, 1989
Multiple ROM data state, read/write memory cell
IBM55 citations96
US4583201AApr 15, 1986
Resistor personalized memory device using a resistive gate fet
IBM67 citations96
US4102733AJul 25, 1978
Two and three mask process for IGFET fabrication
IBM60 citations96
US4564584AJan 14, 1986
Photoresist lift-off process for fabricating semiconductor devices
IBM48 citations92
US4488265ADec 11, 1984
Integrated dynamic RAM and ROS
IBM39 citations92
US4334292AJun 8, 1982
Low voltage electrically erasable programmable read only memory
IBM32 citations92
US4202044AMay 6, 1980
Quaternary FET read only memory
IBM84 citations91
US5143820ASep 1, 1992
Method for fabricating high circuit density, self-aligned metal linens to contact windows
IBM61 citations89
US4336603AJun 22, 1982
Three terminal electrically erasable programmable read only memory
IBM43 citations89
US4329186AMay 11, 1982
Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices
IBM49 citations87
US4536944AAug 27, 1985
Method of making ROM/PLA semiconductor device by late stage personalization
IBM42 citations85
US4363110ADec 7, 1982
Non-volatile dynamic RAM cell
IBM25 citations82
US4072868AFeb 7, 1978
FET inverter with isolated substrate load
IBM21 citations82
US4388704AJun 14, 1983
Non-volatile RAM cell with enhanced conduction insulators
IBM21 citations81
US4399522AAug 16, 1983
Non-volatile static RAM cell with enhanced conduction insulators
IBM9 citations74
US4138782AFeb 13, 1979
Inverter with improved load line characteristic
IBM19 citations73
US4358890ANov 16, 1982
Process for making a dual implanted drain extension for bucket brigade device tetrode structure
IBM12 citations72
US4814290AMar 21, 1989
Method for providing increased dopant concentration in selected regions of semiconductor devices
IBM2 citations56