Inventor

RANJAN RAJIV YADAV

US109 patents

⚠️ This page may combine multiple inventors who share the name “RANJAN RAJIV YADAV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RANJAN RAJIV YADAV

AVALANCHE TECHNOLOGY INC

Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer

MTJ stack and bottom electrode patterning process with ion beam etching using a single mask

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer

Low cost multi-state magnetic memory

Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion

Spin-transfer torque magnetic random access memory (STTMRAM) with perpendicular laminated free layer

MRAM etching processes

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

STTMRAM element having multiple perpendicular MTJs coupled in series

High capaciy low cost multi-state magnetic memory

Method for manufacturing non-volatile magnetic memory cell in two facilities

Multi-state spin-torque transfer magnetic random access memory

Non-volatile flash-RAM memory with magnetic memory

RANJAN RAJIV YADAV

Method for manufacturing non-volatile magnetic memory

Non-uniform switching based non-volatile magnetic based memory

Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM)

Low-cost non-volatile flash-RAM memory

Non-volatile magnetic memory element with graded layer

Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof

Non-volatile magnetic memory element with graded layer

Non-volatile perpendicular magnetic memory with low switching current and high thermal stability

Non-volatile magnetic memory with low switching current and high thermal stability

Non-uniform switching based non-volatile magnetic based memory

High capacity low cost multi-state magnetic memory

Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy

Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (SSTTMRAM)

Low-cost non-volatile flash-RAM memory

KOMAG INC

Thin film magnetic alloy having low noise, high coercivity and high squareness

Method of sputtering selected oxides and nitrides for forming magnetic media

Method of manufacturing a thin film magnetic recording medium having low MrT value and high coercivity

Method of manufacturing a thin film magnetic recording medium having low MrT value and high coercivity

Method for forming an improved magnetic media including sputtering of selected oxides or nitrides in the magnetic layer, and apparatus for same

Thin film magnetic alloy having low noise, high coercivity, and high squareness

Magnetic alloy and method for manufacturing same

SEAGATE TECHNOLOGY LLC

Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same

Perpendicular magnetic recording media with improved interlayer

Texture-induced magnetic anisotropy of soft underlayers for perpendicular recording media

Sputtering target and method for making composite soft magnetic films

SATOH KIMIHIRO

MRAM fabrication method with sidewall cleaning

MRAM etching processes

SEAGATE TECHNOLOGY

CoCrPtB medium with a 1010 crystallographic orientation

Thin film medium with surface-oxidized NiAl seed layer

KESHTBOD PARVIZ

Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement

MALMHALL ROGER KLAS

Method for manufacturing high density non-volatile magnetic memory

ZHANG JING

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer

HUAI YIMING

Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers

ZHOU YUCHEN

Magnetoresistive logic cell and method of use