Inventor
KUO CHENG-HSIUNG
TW45 patents
⚠️ This page may combine multiple inventors who share the name “KUO CHENG-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
20 patentsUS7462906B2Dec 9, 2008
Flash memory process with high voltage LDMOS embedded
TAIWAN SEMICONDUCTOR MFG21 citations92
US7282410B2Oct 16, 2007
Flash memory process with high voltage LDMOS embedded
TAIWAN SEMICONDUCTOR MFG17 citations92
US6980047B1Dec 27, 2005
Low power high voltage ramp-up control circuit
TAIWAN SEMICONDUCTOR MFG33 citations92
US6661713B1Dec 9, 2003
Bandgap reference circuit
TAIWAN SEMICONDUCTOR MFG44 citations92
US6498737B1Dec 24, 2002
Voltage regulator with low sensitivity to body effect
TAIWAN SEMICONDUCTOR MFG20 citations92
US7158414B2Jan 2, 2007
Reference sensing circuit
TAIWAN SEMICONDUCTOR MFG9 citations74
US6842381B2Jan 11, 2005
Method of marginal erasure for the testing of flash memories
TAIWAN SEMICONDUCTOR MFG8 citations74
US6396740B1May 28, 2002
Reference cell circuit for split gate flash memory
TAIWAN SEMICONDUCTOR MFG8 citations74
US9190995B2Nov 17, 2015
Multiple power domain electronic device and related method
TAIWAN SEMICONDUCTOR MFG3 citations63
US8928372B2Jan 6, 2015
Multiple power domain electronic device and related method
TAIWAN SEMICONDUCTOR MFG3 citations63
US7064985B2Jun 20, 2006
Source line driver
TAIWAN SEMICONDUCTOR MFG5 citations63
US7016233B2Mar 21, 2006
Wordline decoder and memory device
TAIWAN SEMICONDUCTOR MFG3 citations63
US7002861B2Feb 21, 2006
Memory device for controlling programming setup time
TAIWAN SEMICONDUCTOR MFG3 citations63
US6967871B1Nov 22, 2005
Reference sensing circuit
TAIWAN SEMICONDUCTOR MFG3 citations63
US6906958B2Jun 14, 2005
Word-line voltage generator
TAIWAN SEMICONDUCTOR MFG5 citations63
US6862722B2Mar 1, 2005
Extendable method for revising patterned microelectronic conductor layer layouts
TAIWAN SEMICONDUCTOR MFG2 citations62
US8906767B2Dec 9, 2014
Semiconductor device with self-aligned interconnects
TAIWAN SEMICONDUCTOR MFG0 citations52
US7348832B2Mar 25, 2008
Dual-voltage generation system
TAIWAN SEMICONDUCTOR MFG0 citations52
US9324383B2Apr 26, 2016
Source line voltage regulation scheme for leakage reduction
TAIWAN SEMICONDUCTOR MFG0 citations51
US7683698B2Mar 23, 2010
Apparatus and method for increasing charge pump efficiency
TAIWAN SEMICONDUCTOR MFG1 citations48
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS10475490B2Nov 12, 2019
Memory devices with improved refreshing operation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9459642B2Oct 4, 2016
Low dropout regulator and related method
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9455006B2Sep 27, 2016
Memory devices with improved refreshing operation
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9208847B2Dec 8, 2015
Memory devices with improved refreshing operations
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10386879B2Aug 20, 2019
Bandgap reference voltage circuit with a startup current generator
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US9715245B2Jul 25, 2017
Circuit for generating an output voltage and method for setting an output voltage of a low dropout regulator
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US11043249B2Jun 22, 2021
Memory devices with improved refreshing operation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10141063B2Nov 27, 2018
Memory controller, memory device and method of operating
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9812182B2Nov 7, 2017
Memory devices with improved refreshing operation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12367932B2Jul 22, 2025
Memory device in which latch is coupled to source line and method of operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935620B2Mar 19, 2024
Memory devices with improved refreshing operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11742024B2Aug 29, 2023
Memory device comprising source line coupled to multiple memory cells and method of operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9502122B2Nov 22, 2016
Systems, devices and methods for memory operations
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US11978518B2May 7, 2024
Sense amplifier control
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9934864B2Apr 3, 2018
Method of setting a reference current in a nonvolatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9613710B2Apr 4, 2017
Multiple-time programmable memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9595340B2Mar 14, 2017
Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9478297B2Oct 25, 2016
Multiple-time programmable memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9472247B2Oct 18, 2016
Memory, semiconductor device including the same, and method for testing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49