Inventor

OKUMURA YOSHINORI

JP52 patents

⚠️ This page may combine multiple inventors who share the name “OKUMURA YOSHINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKUMURA YOSHINORI

MITSUBISHI ELECTRIC CORP

Semiconductor device and method of manufacturing the same

Semiconductor device including retrograde well structure with suppressed substrate bias effects

Semiconductor device having control electrodes with different impurity concentrations

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Element isolating structure of semiconductor device suitable for high density integration

Electrically programmable non-volatile memory device and manufacturing method thereof

Nonvolatile semiconductor memory device having a drain region of different impurity density and conductivity types

Semiconductor device having nitrogen introduced in its polysilicon gate

Semiconductor device having retrograde well and diffusion-type well

Semiconductor memory device having a plurality of well regions of different conductivities

Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions

Semiconductor device having interconnection layer contacting source/drain regions

Method for manufacturing semiconductor device

Trench type semiconductor memory device having side wall contact

Method of fabricating a trench capacitor cell for a semiconductor memory device

Semiconductor device and method of manufacturing the same

LDD semiconductor device with peak impurity concentrations

Semiconductor device having trench type structure

Method for making semiconductor device with no stress generated at the trench corner portion

Semiconductor device having a plurality of conductive layers and manufacturing method therefor

Semiconductor device with no stress generated at the trench corner portion and the method for making the same

Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate

Static-type semiconductor memory device

Semiconductor device

Method of manufacturing a stacked capacitor DRAM

Semiconductor device having at least two field effect transistors and method of manufacturing the same

Semiconductor device

Semiconductor device and method of fabricating semiconductor device

Semiconductor device and method of manufacturing the same

Method of manufacturing a wiring layer for use in a semiconductor device having a plurality of conductive layers

MOS field effect transistor having source/drain regions surrounded by impurity wells

Composite wiring layer

Semiconductor device having an isolation oxide film

Semiconductor memory device having improved connecting structure of bit line and memory cell

Method of manufacturing a semiconductor device having an electric contact portion

Method for manufacturing field effect transistor

Method for manufacturing semiconductor device

Semiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word lines

Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film

Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer

Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer

Semiconductor device having contact between wiring layer and impurity region

Dram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the same

RENESAS TECH CORP

Semiconductor device

Method of manufacturing field effect transistors

Semiconductor device and manufacturing method thereof

Recessed plug semiconductor device and manufacturing method thereof

Magnetic memory device

Method of manufacturing semiconductor device