Inventor · disambiguated record
Rak-Hwan Kim
Also filed as: KIM RAK-HWAN
31 granted patents·19 pending applications·540 citations·filing 2004–2024
96Inventor score
Top patents by PatentIndex Score
50 records- 0198US8865489B2Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displaysROGERS JOHN A·Filed 2010·Granted Oct 21, 2014·355 cites·137 claims
- 0297US9647171B2Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displaysUNIV ILLINOIS·Filed 2014·Granted May 9, 2017·53 cites·14 claims
- 0396US11349007B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·4 cites·18 claims
- 0496US9936574B2Waterproof stretchable optoelectronicsROGERS JOHN A·Filed 2011·Granted Apr 3, 2018·29 cites·26 claims
- 0595US11881519B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 23, 2024·2 cites·18 claims
- 0691US10546841B2Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displaysUNIV ILLINOIS·Filed 2017·Granted Jan 28, 2020·6 cites·13 claims
- 0790US7709342B2Capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 4, 2010·16 cites·16 claims
- 0887US11367651B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 21, 2022·2 cites·18 claims
- 0986US11057991B2Waterproof stretchable optoelectronicsUNIV ILLINOIS·Filed 2018·Granted Jul 6, 2021·4 cites·23 claims
- 1084US8124978B2Capacitor and method of manufacturing the sameKIM HYUN-YOUNG·Filed 2010·Granted Feb 28, 2012·8 cites·18 claims
- 1183US7504725B2Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 17, 2009·30 cites·27 claims
- 1282US12342601B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 1382US9728604B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 1477US7452783B2Capacitor for a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·6 cites·16 claims
- 1577US7364967B2Methods of forming storage capacitors for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·6 cites·10 claims
- 1675US10388563B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·19 claims
- 1772US10700164B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 30, 2020·1 cites·20 claims
- 1872US10418326B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·2 cites·21 claims
- 1971US10217820B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 26, 2019·1 cites·19 claims
- 2071US9773699B2Methods of forming wiring structures including a plurality of metal layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 26, 2017·2 cites·15 claims
- 2170US7524724B2Method of forming titanium nitride layer and method of fabricating capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 28, 2009·4 cites·39 claims
- 2268US11942427B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·8 claims
- 2366US12165916B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 2466US7541282B2Methods of forming metal-nitride layers in contact holesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·2 cites·31 claims
- 2564US7719045B2Capacitor for a semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·2 cites·8 claims
- 2662US2025063814A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2760US12451422B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2860US11450607B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 2960US10734309B2Semiconductor device having a trench with a convexed shaped metal wire formed thereinSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·19 claims
- 3060US2025174554A1Integrated circuit devices having enhanced wiring structures thereinSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3158US2024222453A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3256US2025316582A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3353US11923426B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 3453US2024332381A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3553US2024405090A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3653US2025072096A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3753US2024421190A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3853US2017358519A1Semiconductor Device and Method of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3949US2016141246A1Semiconductor deviceKIM JIN-NAM·Filed 2015·Application pending·0 cites
- 4048US2008185624A1Storage capacitors for semiconductor devicesSAMSUG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4147US2008272355A1Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4246US9991203B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·20 claims
- 4346US2007272950A1Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4445US2008003815A1Method of forming a barrier metal layer of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4545US2007264821A1Methods of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4645US2007289609A1Method for cleaning a process chamberSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4744US10332791B2Semiconductor device with a conductive linerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·0 cites·15 claims
- 4841US2007026671A1Method of forming low resistance tungsten filmsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4939US2006281289A1Method of forming polycide layer and method of manufacturing semiconductor device having polycide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 5033US2016276267A1Methods of forming wiring structures in a semiconductor deviceLEE JONG-JIN·Filed 2016·Application pending·0 cites
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